APT33N90JCU2-Rev1.pdf

APT33N90JCU2
ISOTOP® Boost chopper
VDSS = 900V
RDSon = 120m max @ Tj = 25°C
ID = 33A @ Tc = 25°C
Super Junction MOSFET
Power Module
K
D
Application
 AC and DC motor control
 Switched Mode Power Supplies
 Power Factor Correction
 Brake switch
Features

G



S
K
S
G
D
ISOTOP
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
ISOTOP® Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
 Outstanding performance at high frequency operation
 Stable temperature behavior
 Very rugged
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive TC of VCEsat
 RoHS Compliant
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
900
33
25
75
±20
120
290
8.8
2.9
1940
Unit
V
A
V
m
W
A
October, 2012
ID
Parameter
Drain - Source Breakdown Voltage
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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1–6
APT33N90JCU2 – Rev 1
Symbol
VDSS
APT33N90JCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
Typ
2.5
500
100
3
Tj = 25°C
Tj = 125°C
VGS = 0V,VDS = 900V
VGS = 0V,VDS = 900V
VGS = 10V, ID = 26A
VGS = VDS, ID = 3mA
VGS = ±20 V, VDS = 0V
Max
100
Unit
120
3.5
100
m
V
nA
Max
Unit
µA
Dynamic Characteristics
Symbol Characteristic
Input Capacitance
Ciss
Coss
Output Capacitance
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Test Conditions
VGS = 0V ; VDS = 100V
f = 1MHz
Min
Typ
6.8
0.33
nF
270
VGS = 10V
VBus = 400V
ID = 26A
nC
32
115
70
Inductive Switching (125°C)
VGS = 10V
VBus = 600V
ID = 26A
RG = 7.5
20
ns
400
25
Inductive switching @ 25°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5
Inductive switching @ 125°C
VGS = 10V ; VBus = 600V
ID = 26A ; RG = 7.5
1.5
mJ
0.75
2.1
mJ
0.85
Chopper diode ratings and characteristics
IF
VF
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 800V
di/dt=200A/µs
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Min
1200
Tj = 25°C
Tj = 125°C
Tc = 80°C
Typ
Max
100
500
Tj = 125°C
30
2.6
3.2
1.8
Tj = 25°C
300
Tj = 125°C
380
Tj = 25°C
360
Tj = 125°C
1700
Unit
V
µA
A
3.1
V
ns
October, 2012
IRM
Test Conditions
nC
2–6
APT33N90JCU2 – Rev 1
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
APT33N90JCU2
Thermal and package characteristics
Symbol Characteristic
Min
RthJC
Junction to Case Thermal Resistance
RthJA
VISOL
TJ,TSTG
TL
Torque
Wt
Junction to Ambient (IGBT & Diode)
Typ
CoolMOS
Diode
2500
-40
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
Max
0.43
1.05
20
Unit
°C/W
V
150
300
1.5
29.2
°C
N.m
g
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
1.95 (.077)
2.14 (.084)
3.3 (.129)
3.6 (.143)
Drain
Cathode
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
38.0 (1.496)
38.2 (1.504)
Source
Gate
Dimensions in Millimeters and (Inches)
Typical CoolMOS performance Curve
150
ZCS
100
50
Hard
switching
0
10
12.5
15
17.5
20
22.5
25
2.5
2.0
1.5
1.0
0.5
25
100
125
150
4
Switching Energy (mJ)
Eon and Eoff (mJ)
VDS=600V
RG=7.5Ω
TJ=125°C
L=100µH
3
75
Switching Energy vs Gate Resistance
Switching Energy vs Current
4
50
TJ, Junction Temperature (°C)
ID, Drain Current (A)
Eon
2
Eoff
1
0
October, 2012
ZVS
200
ON resistance vs Temperature
3.0
Eon
3
Eoff
2
VDS=600V
ID=26A
TJ=125°C
L=100µH
1
0
5
10
15
20
25
30
ID, Drain Current (A)
35
40
5
10
15
20
25
30
35
Gate Resistance (Ohms)
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3–6
APT33N90JCU2 – Rev 1
Frequency (kHz)
VDS=600V
D=50%
RG=7.5Ω
TJ=125°C
TC=75°C
RDS(on), Drain to Source ON resistance
(Normalized)
Operating Frequency vs Drain Current
250
APT33N90JCU2
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.5
0.9
0.4
0.7
0.3
0.5
0.2
0.3
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
6V
80
5V
40
0
0
5
10
15
VDS, Drain to Source Voltage (V)
20
Maximum Safe Operating Area
10 ms
ID, DC Drain Current (A)
ID, Drain Current (A)
100 µs
Single pulse
TJ=150°C
TC=25°C
950
925
900
25
75
100
125
30
25
20
15
10
5
1
0
1
10
100
1000
25
VDS, Drain to Source Voltage (V)
1000
Coss
100
10
Crss
1
0
150
25 50 75 100 125 150 175 200
VDS, Drain to Source Voltage (V)
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10
VDS=400V
ID=26A
TJ=25°C
8
6
October, 2012
Ciss
10000
50
75
100
125
TC, Case Temperature (°C)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
Capacitance vs Drain to Source Voltage
100000
C, Capacitance (pF)
50
DC Drain Current vs Case Temperature
35
limited by RDSon
10
975
TJ, Junction Temperature (°C)
1000
100
1000
4
2
0
0
50
100 150 200
Gate Charge (nC)
250
300
4–6
APT33N90JCU2 – Rev 1
ID, Drain Current (A)
VGS=20, 8V
BVDSS, Drain to Source Breakdown
Voltage
Breakdown Voltage vs Temperature
120
APT33N90JCU2
Typical Chopper diode performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.2
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
Trr vs. Current Rate of Charge
TJ=125°C
60
40
20
TJ=25°C
0
0.0
1.0
2.0
500
trr, Reverse Recovery Time (ns)
3.0
TJ=125°C
VR=800V
400
300
45 A
200
30 A
15 A
100
0
0
4.0
200
TJ=125°C
VR=800V
45 A
3
30 A
2
15 A
1
0
0
200
400
600
800
1000 1200
30 A
TJ=125°C
VR=800V
25
15 A
20
45 A
15
10
5
0
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
50
160
Duty Cycle = 0.5
TJ=175°C
40
IF(AV) (A)
120
80
30
20
10
40
0
0
1
10
100
VR, Reverse Voltage (V)
1000
25
50
75
100
125
150
175
Case Temperature (ºC)
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
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5–6
October, 2012
C, Capacitance (pF)
800 1000 1200
30
-diF/dt (A/µs)
200
600
IRRM vs. Current Rate of Charge
QRR vs. Current Rate Charge
4
400
-diF/dt (A/µs)
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (µC)
VF, Anode to Cathode Voltage (V)
APT33N90JCU2 – Rev 1
IF, Forward Current (A)
80
APT33N90JCU2
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without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
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application in which the failure of the Seller's Product could create a situation where personal injury, death or property
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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
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APT33N90JCU2 – Rev 1
October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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