APT33N90JCCU2 ISOTOP® Boost chopper VDSS = 900V RDSon = 120m max @ Tj = 25°C ID = 33A @ Tc = 25°C Super Junction MOSFET SiC chopper diode Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch D Features - G SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF S K S G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS D ISOTOP Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 900 33 25 75 ±20 120 290 8.8 2.9 1940 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APT33N90JCCU2 – Rev 1 October, 2012 K APT33N90JCCU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ 2.5 500 100 3 Tj = 25°C Tj = 125°C VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V VGS = 10V, ID = 26A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V Max 100 Unit 120 3.5 100 m V nA Max Unit µA Dynamic Characteristics Symbol Characteristic Input Capacitance Ciss Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min Typ 6.8 0.33 nF 270 VGS = 10V VBus = 400V ID = 26A nC 32 115 70 Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 26A RG = 7.5 20 ns 400 25 Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5 Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 26A ; RG = 7.5 0.9 mJ 0.75 1.3 mJ 0.85 SiC chopper diode ratings and characteristics IRM IF Maximum Reverse Leakage Current Test Conditions VR=1200V DC Forward Current Min 1200 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Typ Max 32 56 10 1.6 2.3 200 1000 VF Diode Forward Voltage IF = 10A QC Total Capacitive Charge IF = 10A, VR = 600V di/dt =500A/µs 40 C Total Capacitance f = 1MHz, VR = 200V 96 f = 1MHz, VR = 400V 69 www.microsemi.com Unit V µA A 1.8 3 V nC pF 2–6 APT33N90JCCU2 – Rev 1 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APT33N90JCCU2 Thermal and package characteristics Symbol Characteristic Min RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Typ CoolMOS SiC Diode 2500 -40 RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight Max 0.43 1.65 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) Drain Cathode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) Typical CoolMOS performance Curve ZVS 200 ZCS 150 100 50 Hard switching 0 10 15 20 25 30 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 25 100 125 150 3 Eoff Switching Energy (mJ) Eon and Eoff (mJ) VDS=600V RG=7.5Ω TJ=125°C L=100µH 2 75 Switching Energy vs Gate Resistance Switching Energy vs Current 2 50 TJ, Junction Temperature (°C) ID, Drain Current (A) Eon Eoff 1 1 0 2 Eon VDS=600V ID=26A TJ=125°C L=100µH 1 0 5 10 15 20 25 30 ID, Drain Current (A) 35 40 5 10 15 20 25 30 35 Gate Resistance (Ohms) www.microsemi.com 3–6 APT33N90JCCU2 – Rev 1 October, 2012 Frequency (kHz) VDS=600V D=50% RG=7.5Ω TJ=125°C TC=75°C RDS(on), Drain to Source ON resistance (Normalized) Operating Frequency vs Drain Current 250 APT33N90JCCU2 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 80 5V 40 0 0 5 10 15 20 1000 975 950 925 900 25 VDS, Drain to Source Voltage (V) Maximum Safe Operating Area limited by RDSon Single pulse TJ=150°C TC=25°C 10 ms ID, DC Drain Current (A) ID, Drain Current (A) 100 µs 10 100 125 30 25 20 15 10 5 1 0 1 10 100 1000 25 VDS, Drain to Source Voltage (V) Ciss 10000 1000 Coss 100 10 Crss 1 0 50 75 100 125 TC, Case Temperature (°C) 150 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 75 DC Drain Current vs Case Temperature 35 1000 100 50 TJ, Junction Temperature (°C) 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com 10 VDS=400V ID=26A TJ=25°C 8 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 4–6 APT33N90JCCU2 – Rev 1 October, 2012 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 120 APT33N90JCCU2 Typical SiC Chopper diode performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.8 0.9 1.6 1.4 0.7 1.2 1 0.5 0.8 0.3 0.6 0.4 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 20 100 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 16 TJ=75°C 12 TJ=125°C 8 4 TJ=175°C 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 75 50 TJ=75°C TJ=125°C 25 TJ=175°C 0 400 600 TJ=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 700 600 500 400 300 200 100 0 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 5–6 APT33N90JCCU2 – Rev 1 October, 2012 1 APT33N90JCCU2 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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