TYPICAL PERFORMANCE CURVES APT30GN60B APT30GN60B_S(G) APT30GN60S APT30GN60B(G) APT30GN60S(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. (B) TO -2 D3PAK 47 (S) C G G • 600V Field Stop • • • • C E E Trench Gate: Low VCE(on) Easy Paralleling 6µs Short Circuit Capability 175°C Rated C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT30GN60B_S(G) VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C 63 I C2 Continuous Collector Current @ TC = 110°C 37 I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts Amps 90 Switching Safe Operating Area @ TJ = 150°C 90A @ 600V Total Power Dissipation Watts 203 Operating and Storage Junction Temperature Range -55 to 175 °C Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) (VCE = VGE, I C = 430µA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125°C) I CES I GES RG(int) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.1 1.5 1.9 25 2 300 N/A CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com µA TBD Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.7 2 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 7-2009 MIN Rev B Characteristic / Test Conditions 050-7616 Symbol APT30GN60B_S(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA SCSOA Total Gate Charge 1750 VGE = 0V, VCE = 25V 70 f = 1 MHz 50 Gate Charge 9.0 VGE = 15V 165 VCE = 300V 10 I C = 30A Gate-Collector ("Miller ") Charge TJ = 150°C, R G = 4.3Ω Switching Safe Operating Area VGE = VCC = 360V, VGE = 15V, TJ = 150°C, R G = 4.3Ω 7 tr Current Rise Time VCC = 400V 14 td(off) Turn-off Delay Time VGE = 15V 155 I C = 30A 55 RG = 4.3Ω 7 525 TJ = +25°C 565 Eon2 Turn-on Switching Energy Turn-on Switching Energy (With Diode) 5 Eoff Turn-off Switching Energy td(on) Turn-on Delay Time Inductive Switching (125°C) 12 tr Current Rise Time VCC = 400V 14 td(off) Turn-off Delay Time VGE = 15V 180 I C = 30A RG = 4.3Ω 7 75 555 TJ = +125°C 950 tf 6 44 Turn-on Switching Energy Eon2 Turn-on Switching Energy (Wtih Diode) Eoff Turn-off Switching Energy ns µJ 700 Current Fall Time Eon1 nC µs 12 Eon1 V 6 Inductive Switching (25°C) 4 pF A Turn-on Delay Time Current Fall Time UNIT 90 td(on) tf MAX 90 7, 15V, L = 100µH,VCE = 600V Short Circuit Safe Operating Area TYP Capacitance 3 Gate-Emitter Charge MIN 55 66 ns µJ 895 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX RθJC Junction to Case (IGBT) .74 RθJC Junction to Case (DIODE) N/A WT Package Weight 5.9 UNIT °C/W gm 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and diode leakages 3 See MIL-STD-750 Method 3471. 050-7616 Rev B 7-2009 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES APT30GN60B_S(G) 100 90 V GE 15V = 15V 13V 12V TJ = 125°C 40 TJ = 175°C 30 20 11V 60 10V 40 9V 20 8V 10 0 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) TJ = -55°C 70 TJ = 25°C 60 TJ = 125°C 50 TJ = 175°C 40 30 20 10 0 0 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.0 TJ = 25°C. 250µs PULSE TEST <0.5 % DUTY CYCLE 2.5 IC = 60A 2.0 IC = 30A IC = 15A 1.5 1.0 0.5 0 9 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 8 1.10 1.00 0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Breakdown Voltage vs. Junction Temperature J VCE = 120V 12 VCE = 300V 10 VCE = 480V 8 6 4 2 0 20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate Charge 3.5 VGE = 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE 3.0 IC = 60A 2.5 2.0 IC = 30A 1.5 IC = 15A 1.0 0.5 0 0 25 50 75 100 125 150 175 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 90 1.30 1.20 I = 30A C T = 25°C 14 0 3 6 9 12 15 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics IC, DC COLLECTOR CURRENT(A) IC, COLLECTOR CURRENT (A) VGE, GATE-TO-EMITTER VOLTAGE (V) 250µs PULSE TEST<0.5 % DUTY CYCLE 80 FIGURE 2, Output Characteristics (TJ = 125°C) 16 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 90 7V 0 2 4 6 8 10 12 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 80 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 7-2009 TJ = 25°C 50 Rev B TJ = -55°C 60 80 050-7616 70 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 80 APT30GN60B_S(G) 250 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 16 14 VGE = 15V 12 10 8 6 4 VCE = 400V T = 25°C, or =125°C 2 RJ = 4.3Ω G 0 L = 100µH RG = 4.3Ω, L = 100µH, VCE = 400V 80 tf, FALL TIME (ns) tr, RISE TIME (ns) VCE = 400V RG = 4.3Ω L = 100µH 100 RG = 4.3Ω, L = 100µH, VCE = 400V 40 30 20 TJ = 25 or 125°C,VGE = 15V 3000 60 TJ = 25°C, VGE = 15V 40 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1600 V = 400V CE V = +15V GE R = 4.3Ω G 2500 TJ = 125°C, VGE = 15V 20 EOFF, TURN OFF ENERGY LOSS (µJ) EON2, TURN ON ENERGY LOSS (µJ) 50 60 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current TJ = 125°C 2000 1500 1000 500 TJ = 25°C V = 400V CE V = +15V GE R = 4.3Ω 1400 TJ = 125°C G 1200 1000 800 600 TJ = 25°C 400 200 0 0 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 6000 3000 V = 400V CE V = +15V GE T = 125°C J 5000 4000 Eon2,60A Eoff,60A 3000 2000 Eon2,30A 1000 Eoff,30A Eoff,15A SWITCHING ENERGY LOSSES (µJ) SWITCHING ENERGY LOSSES (µJ) VGE =15V,TJ=25°C 100 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 0 7-2009 VGE =15V,TJ=125°C 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 10 Rev B 150 0 10 50 050-7616 200 V = 400V CE V = +15V GE R = 4.3Ω G 2500 Eon2,60A 2000 Eoff,60A 1500 1000 Eon2,30A Eoff,30A 500 Eon2,15A 0 0 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 Eoff,15A Eon2,15A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 3,000 APT30GN60B_S(G) 100 IC, COLLECTOR CURRENT (A) Cies C, CAPACITANCE ( F) 1,000 P 500 100 Coes 50 Cres 90 80 70 60 50 40 30 20 10 10 0 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0.70 D = 0.9 0.60 0.7 0.50 0.5 0.40 Note: 0.30 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.80 0.3 0.20 t1 t2 SINGLE PULSE 0.1 0.10 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 50 F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf 10 5 1 T = 125°C J T = 75°C C D = 50 % V = 400V CE R = 4.3Ω f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC G 10 15 20 25 30 35 40 45 50 55 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current Rev B 7-2009 5 050-7616 FMAX, OPERATING FREQUENCY (kHz) 130 APT30GN60B_S(G) 10% APT40DQ60 Gate Voltage TJ = 125°C td(on) tr IC V CC 90% Collector Current V CE 5% 5% 10% Collector Voltage A Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 90% Gate Voltage TJ = 125°C td(off) 90% Collector Voltage tf 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 3 TO-247 Package Outline D PAK Package Outline e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) Collector 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Collector (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e3 SAC: Tin, Silver, Copper 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 7-2009 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Rev B Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 050-7616 13.41 (.528) 13.51(.532) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Collector Emitter 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Emitter Collector Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Collector) and Leads are Plated