7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813 2N3719 APPLICATIONS: • • • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 40 Vdc (Min) - 2N3719 • DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc • Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc • High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ) Silicon PNP Power Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200° C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life. TO-5 ABSOLUTE MAXIMUM RATINGS: SYMBOL VCEO* VCB* VEB* IC* IC* IB* T STG* T J* PD* PD* θ JC VALUE UNITS Collector-Emitter Voltage Collector-Base Voltage CHARACTERISTIC 40 40 Vdc Vdc Emitter-Base Voltage 4.0 Vdc Peak Collector Current 10 Adc Continuous Collector Current 3.0 Adc Base Current Storage Temperature Operating Junction Temperature Total Device Dissipation TC = 25° C Derate above 25° C Total Device Dissipation T A = 25° C Derate above 25° C Thermal Resistance Junction to Case Junction to Ambient * Indicates JEDEC registered Data. MSC1026.PDF 02-24-99 0.5 Adc -65 to 200 -65 to 200 6.0 °C °C Watts 34.3 1.0 mW/° C Watts 5.71 mW/° C 29 175 ° C/W ° C/W 2N3719 ELECTRICAL CHARACTERISTICS: (25° Case Temperature Unless Otherwise Noted) SYMBOL VCEO(sus)* ICEX* CHARACTERISTIC Collector-Emitter Sustaining Voltage Collector Cutoff Current TEST CONDITIONS VALUE Min. Max. Units IC = 20 mAdc, IB = 0 (Note 1) 40 ---- Vdc VCE = 40 Vdc, VBE(off) = 2.0 Vdc VCE = 40 Vdc, VBE(off) = 2.0 Vdc, TC = 150° C ------- 10 1.0 µAdc mAdc ICBO* Collector Cutoff Current VCB = 40 Vdc, IE = 0 ---- 10 µAdc IEBO* Emitter Cutoff Current VBE = 4.0 Vdc, IC = 0 ---- 1.0 mAdc hFE* DC Current Gain (Note 1) IC = 500 mAdc, VCE = 1.5 Vdc 20 ---- ---- IC = 1.0 Adc, VCE = 1.5 Vdc 25 - 40° C IC = 1.0 Adc, IB = 100 mAdc, TC = - 40° C to + 100° C IC = 3.0 Adc, IB = 300 mAdc, TC = - 40° C to + 100° C 15 180 ---- ------- ---- 0.75 Vdc ---- 1.5 Vdc ---- 1.5 Vdc ---- 2.3 Vdc IC = 500 mAdc, VCE = 10 Vdc, ftest = 30 MHz 60 ---- MHz VCB = 10 Vdc, IE = 0, f = 0.1 MHz ---- 120 pF IC = 1.0 Adc, VCE = 1.5 Vdc, TC = VCE(sat)* Cob* Collector-Emitter Saturation Voltage (Note 1) Base-Emitter Saturation Voltage (Note 1) Current-Gain Bandwidth Product (Note 2) Output Capacitance Cib* Input Capacitance VEB = 0.5 Vdc, IC = 0, f = 0.1 MHz ---- 1000 pF ton* Turn-on Time VCC = 12 Vdc, VBE(off) = 0, IC = 1.0 Adc, IB1 = 0.1 Adc ---- 100 ns toff* Turn-off Time VCC = 12 Vdc, IC = 1.0 Adc, IB1 = IB2 = 100 mAdc ---- 400 ns VBE(sat)* fT* IC = 1.0 Adc, IB = 100 mAdc, TC = IC = 3.0 Adc, IB = 300 mAdc, TC = Note 1: Pulse Test: Pulse width ≤ 300µ S, Duty Cycle = 2.0%. Note 2: fT = | hfe | * ftest * Indicates JEDEC registered data MSC1026.PDF 02-24-99 - 40° C to + 100° C - 40° C to + 100° C 2N3719 PACKAGE MECHANICAL DATA: 1.500 [38.10] MIN .031 [.787] .240 [6.09] .260 [6.60] . 029 [.736] .045 [1.14] 45° .010 [.254] .030 [.762] .200 [5.08] Ø.305 [7.75] Ø.335 [8.51] .100 [2.54] [+.051] Ø.017 +.002 -.001 [.432] [.025] .100 [2.54] Ø.335 [8.51] Ø.370 [9.40] NOTE: DIMENSIONS IN [ ] = MILLIMETERS MSC1026.PDF 02-24-99