MSC1350M.pdf

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MSC1350M
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
Features
•
•
•
•
•
•
1090 MHz
COMMON BASE
GOLD METALLIZATION
CLASS C OPERATION
POUT = 350 W MIN. WITH 7.0 dB GAIN
WITHSTANDS 20:1 VSWR UNDER FULL LOAD
DESCRIPTION:
THE MSC1350M IS A SILICON NPN BIPOLAR DEVICE
SPECIFICALLY DESIGNED FOR IFF AVIONICS APPLICATIONS.
GOLD METALLIZATION AND EMITTER BALLASTING ASSURE
HIGH RELIABILITY UNDER CLASS A LINEAR AMPLIFIER
OPERATION. THE DEVICE IS CAPABLE OF WITHSTANDING
A 20:1 VSWR AT ALL PHASE ANGLES UNDER FULL LOAD
CONDITIONS.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°° C)
Symbol
VCC
IC
PDISS
TJ
T STG
Parameter
Collector-Supply Voltage*
Device Current*
Power Dissipation*
Junction Temperature
Storage Temperature
Value
Unit
55
19.8
720
200
-65 to +200
V
A
W
°C
°C
0.2
° C/W
Thermal Data
RTH(J-C)
*
Thermal Resistance Junction-case
MSCXXXX.PDF 08-19-02
MSC1350M
*Applies only to rated RF Amplifier Operation
ELECTRICAL SPECIFICATIONS (Tcase
(Tcase = 25°
25° C)
STATIC
Symbol
BVCBO
BVEBO
BVCER
ICES
hFE
Test Conditions
IC = 10mA
IE = 1mA
IC = 25mA
VCE = 50 V
VCE = 5 V
IE = 0mA
IC = 0mA
RBE = 10Ω
Ω
IC = 1A
Min.
Value
Typ.
Max.
Unit
65
3.5
65
--15
-----------
------25
120
V
V
V
mA
---
DYNAMIC
Symbol
Test Conditions
Min.
Value
Typ.
Max.
Unit
POUT
f = 1090 MHz
PIN = 70W
VCC = 50V
350
360
---
W
ηC
f = 1090 MHz
PIN = 70W
VCC = 50V
40
44
---
GP
Condition
s
f = 1090 MHz
PIN = 70W
VCC = 50V
7.0
7.1
---
%
dB
Pulse Width = 10uS
Duty Cycle = 1%
IMPEDANCE DATA
FREQ
ZIN (Ω
Ω)
ZCL (Ω
Ω)
1025 MHz
5.0 + j5.0
7.0 - j2.5
1090 MHz
7.0 + j2.5
7.5 - j2.8
1150 MHz
3.6 + j2.5
6.8 - j2.7
VCC = 50V
PIN = 70W
MSCXXXX.PDF 08-19-02
MSC1350M
PACKAGE
PACKAGE MECHANICAL DATA
MSCXXXX.PDF 08-19-02