2N2907ADIE A Microsemi Company 580 Pleasant St. Watertown, MA 02172 Phone: 617-924-9280 Fax: 617-924-1235 DIE SPECIFICATION SWITCHING TRANSISTOR PNP SILICON FEATURES: n ELECTRICAL PERFORMANCE I.A.W. MIL-PRF-19500/291 n AVAILABLE IN WAFER OR CHIP FORM FOR HYBRID APPLICATIONS n GENERAL PURPOSE-HIGH SPEED SWITCHING APPLICATIONS n LOW VCE(sat): .4V @ IC = 150 mAdc PHYSICAL DIMENSIONS Absolute Maximum Ratings: Symbol Parameter Limit Vceo Vcbo Vebo Ic Tj, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current- Continuous Operating Junction & Storage Temperature Range 60 60 5.0 600 -65 to +200 Packaging Options: W: Wafer (100% probed) U: Wafer (sample probed) D: Chip (Waffle Pack) B: Chip (Vial) V: Chip (Waffle Pack, 100% visually inspected) X: Other Vdc Vdc Vdc mAdc °C Processing Options: Standard: Capable of JANTXV applications (No Suffix) Suffix C: Commercial Suffix S: Capable of S-Level equivalent applications ORDERING INFORMATION: PART #: 2N2907A_ _ - _ First Suffix Letter: Packaging Option Second Suffix Letter: Processing Option Dash #: Metallization Option Metallization Options: Standard: Al Top Dash 1: Al Top Unit / Au Backside (No Dash #) / TiPdAg Backside Sertech reserves the right to make changes to any product design, specification, or other information at any time without prior notice. Data Sheet, Die, 2N2907A MSW Rev. - 4/14/98 MSC0948.PDF 1 Electrical Characteristics @ Tj = 25 °C Symbol Parameter Conditions Min Max Unit OFF CHARACTERISTICS V(BR)CBO V(BR)EBO V(BR)CEO ICES ICBO1 IEBO Breakdown Voltage, Collector to Base Breakdown Voltage, Emitter to Base Breakdown Voltage, Collector to Emitter Collector to Emitter Cutoff Current Collector to Base Cutoff Current Emitter to Base Cutoff Current Bias Cond. D, IC=10uAdc Bias Cond. D, IE=10uAdc Bias Cond. D, IC= 10mAdc, pulsed Bias Cond. D, VCE=50Vdc Bias Cond. D, VCB=50Vdc Bias Cond. D, VEB= 4Vdc 60 5 60 VCE=10Vdc, IC=0.1mAdc VCE=10Vdc, IC=1.0mAdc VCE=10Vdc, IC=10mAdc VCE=10Vdc, IC=150mAdc, pulsed VCE=10Vdc, IC=500mAdc, pulsed IC=150mAdc, IB=15mAdc, pulsed IC=500mAdc, IB=50mAdc, pulsed IC=150mAdc, IB=15mAdc, pulsed IC=500mAdc, IB=50mAdc, pulsed 75 100 100 100 50 VCE= 10Vdc,IC =1mAdc, f= 1kHz VCE= 20Vdc,IC =50mAdc, f=100MHz 100 2 Vdc Vdc Vdc 50 nAdc 10 nAdc 50 nAdc ON CHARACTERISTICS hFE1 hFE2 hFE3 hFE4 hFE5 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 Forward-Current Transfer Ratio Forward-Current Transfer Ratio Forward-Current Transfer Ratio Forward-Current Transfer Ratio Forward-Current Transfer Ratio Collector to Emitter Saturation Voltage Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Base to Emitter Saturation Voltage 0.6 450 300 0.4 1.6 1.3 2.6 Vdc Vdc Vdc Vdc SMALL SIGNAL CHARACTERISTICS hfe /hfe/ Cobo Cibo Short Circuit Forward Current Xfer Ratio Magnitude of Short Circuit Forward Current Transfer Ratio Output Capacitance Input Capacitance VCB= 10Vdc, IE =0, 100kHz< f <1MHz VEB= 2.0Vdc, IC=0, 100kHz< f <1MHz 8 pF 30 pF SWITCHING CHARACTERISTICS ton toff Saturated Turn-on Time Saturated Turn-off Time As defined in 19500/291 Figure 7 As defined in 19500/291 Figure 8 2 45 nS 300 nS