5962-9318202QCA SMD

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Add case outline D. Technical and editorial changes throughout in accordance
with N.O.R. 5962-R169-95.
95-07-28
M. A. FRYE
B
Add device type 02. Technical and editorial changes throughout.
96-02-02
M. A. FRYE
C
Changes to the input offset current and input bias current tests in table I.
Update boilerplate. –rrp
00-09-06
R. MONNIN
D
Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. - gt
04-01-08
R. MONNIN
E
Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - ro
11-05-04
C. SAFFLE
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PMIC N/A
PREPARED BY
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
RICK C. OFFICER
STANDARD
MICROCIRCUIT
DRAWING
CHECKED BY
CHARLES E. BESORE
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
MICHAEL A. FRYE
DRAWING APPROVAL DATE
93-06-07
REVISION LEVEL
E
MICROCIRCUIT, LINEAR, RAIL-TO-RAIL, QUAD,
OPERATIONAL AMPLIFIER, MONOLITHIC
SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-93182
1 OF 11
5962-E317-11
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and
M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part
or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
-
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
Q
C
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
93182
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
Generic number
01
02
Circuit function
TLC2274
TLC2274A
Rail-to-rail, quad, operational amplifier
Rail-to-rail, quad, operational amplifier
with enhanced VIO
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device requirements documentation
Device class
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
C
D
2
Descriptive designator
Terminals
GDIP1-T14 or CDIP2-T14
GDFP1-F14 or CDFP2-F14
CQCC1-N20
14
14
20
Package style
Dual-in-line
Flat pack
Square leadless chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
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REVISION LEVEL
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2
1.3 Absolute maximum ratings. 1/ 2/
Supply voltage range (+VDD) ...................................................................... +8 V dc
Supply voltage range (-VDD) ....................................................................... -8 V dc
Differential input voltage (VID) ..................................................................... 16 V 3/
Input voltage range (VIN) (any input) ........................................................... 8 V
Input current, each input (IIN) ...................................................................... 5.0 mA
Output current (IOUT) (each output) ............................................................ 50.0 mA
Total current into +VDD terminal .................................................................. 50.0 mA
Total current out of -VDD terminal ................................................................
Duration of short-circuit current at or below +25C ......................................
Storage temperature range .........................................................................
Terminal temperature for 60 seconds:
Case 2 ......................................................................................................
Lead temperature, soldering 1.6 mm (1/16 inch) from case
for 60 seconds (cases C and D) ...............................................................
Maximum power dissipation (PD): 5/
Cases C and 2 .........................................................................................
Case D .....................................................................................................
Thermal resistance, junction-to-case (JC) ..................................................
50.0 mA
Unlimited 4/
-65C to +150C
+260C
+300C
1375 mW
680 mW
See MIL-STD-1835
1.4 Recommended operating conditions.
Supply voltage (VDD) ................................................................................ 2.2 V dc minimum, 8.0 V dc maximum
Input voltage range (VIN) ............................................................................. -VDD minimum, +VDD – 1.5 V dc maximum
Common-mode input voltage (VIC) .............................................................. -VDD minimum, +VDD – 1.5 V dc maximum
Ambient operating temperature range (TA) ................................................. -55C to +125C
_____
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ All voltage values, except differential voltages, are with respect to the midpoint between +VDD and -VDD.
3/ Differential voltages are at the non-inverting input with respect to the inverting input. Excessive current flows if the input is
brought below -VDD – 0.3 V.
4/ The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the
maximum dissipation rating is not exceeded.
5/ Above TA = +25C, derate by the following factors: cases C and 2 at 11.0 mW/C and case D at 8.0 mW/C.
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REVISION LEVEL
E
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2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text
of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified
in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the
option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked.
Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in
accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
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REVISION LEVEL
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TABLE I. Electrical performance characteristics.
Test
Symbol
Conditions
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Min
Input offset voltage
VIO
VDD = 2.5 V, VIC = 0 V,
1
RS = 50 , VOUT = 0 V
2, 3
VDD = 5 V, VIC = 0 V,
1
RS = 50 , VOUT = 0 V
2, 3
Input offset current
IIO
VDD = 2.5 V, VIC = 0 V,
2, 3
Unit
Limits 1/
Max
01
2500
02
950
01
3000
02
1500
01
2500
02
950
01
3000
02
1500
All
800
V
pA
RS = 50 , VOUT = 0 V,
TA = +125C, -55C
VDD = 5 V, VIC = 0 V,
800
RS = 50 , VOUT = 0 V,
TA = +125C, -55C
Input bias current
IIB
VDD = 2.5 V, VIC = 0 V,
2, 3
All
800
pA
RS = 50 , VOUT = 0 V,
TA = +125C, -55C
VDD = 5 V, VIC = 0 V,
800
RS = 50 , VOUT = 0 V,
TA = +125C, -55C
Common-mode input
voltage range
VICR
VDD = 5 V, |VIO|  5 mV,
1
RS = 50 
VDD = 5 V, |VIO|  5 mV,
RS = 50 
High-level output voltage
VOH
VDD = 5 V, IOH = -200 A
All
0 to 4
2, 3
0 to
3.5
1
-5 to
4
2, 3
-5 to
3.5
1, 2, 3
All
V
4.85
V
4.25
VDD = 5 V, IOH = -1 mA
See footnotes at end of table.
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TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Min
Low-level output voltage
VOL
VDD = 5 V, VIC = 2.5 V,
1, 2, 3
IOL = 500 A
Unit
Limits 1/
All
Max
0.15
VDD = 5 V, VIC = 2.5 V,
V
1.5
IOL = 5 mA
Maximum positive peak
output voltage swing
Maximum negative peak
output voltage swing
+VOM
VDD = 5 V, IOUT = -200 A
1, 2, 3
All
4.85
VDD = 5 V, IOUT = -1 mA
-VOM
V
4.25
VDD = 5 V, VIC = 0 V,
1, 2, 3
IOUT = 500 A
All
-4.85
VDD = 5 V, VIC = 0 V,
V
-3.5
IOUT = 5 mA
VDD = 5 V, VIC = 2.5 V,
Large-signal differential
voltage amplification
AVD
1, 2, 3
VOUT = 1 V to 4 V,
All
10
V/mV
RL = 10 k2
VDD = 5 V, VIC = 0 V,
VOUT = 4 V,
20
RL = 10 k2/
Common-mode rejection
ratio
CMRR
VDD = 5 V, VOUT = 2.5 V,
1, 2, 3
All
70
dB
VIC = 0 V to 2.7 V,
RS = 50 
VDD = 5 V, VOUT = 0 V,
75
VIC = -5 V to 2.7 V,
RS = 50 
Supply voltage rejection
ratio (VDD/VIO)
kSVR
VDD = 4.4 V to 16 V,
1, 2, 3
All
80
dB
VDD = 5 V,
VIC = VDD/2, no load
VDD = 2.2 V to 8 V,
80
VDD = 5 V,
VIC = VDD/2, no load
Supply current
(both channels)
IDD
VDD = 5 V, VOUT = 2.5 V,
1, 2, 3
All
6
mA
no load
VDD = 5 V, VOUT = 0 V,
6
no load
See footnotes at end of table.
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TABLE I. Electrical performance characteristics – Continued.
Test
Symbol
Conditions
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Device
type
Min
Slew rate at unity gain
SR
VDD = 5 V, RL = 10 k, 2/
4
All
Unit
Limits 1/
Max
2.3
V/s
VOUT = 0.5 V to 2.5 V,
CL = 100 pF
VDD = 5 V, RL = 10 k, 2/
VOUT = 2.3 V
CL = 100 pF
5, 6
1.7
4
2.3
5, 6
1.7
1/ The algebraic convention, whereby the most negative value is a minimum and the most positive is a maximum, is used in
this table. Negative current shall be defined as conventional current flow out of a device terminal.
2/ Referenced to 2.5 V.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of
supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of
MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of
product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime’s agent,
and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore
documentation shall be made available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 49 (see MIL-PRF-38535, appendix A).
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Device types
Case outlines
Terminal number
01 and 02
C and D
2
Terminal symbol
1
OUTPUT 1
NC
2
-INPUT 1
OUTPUT 1
3
+INPUT 1
-INPUT 1
4
+VDD
+INPUT 1
5
+INPUT 2
NC
6
-INPUT 2
+VDD
7
OUTPUT 2
NC
8
OUTPUT 3
+INPUT 2
9
-INPUT 3
-INPUT 2
10
+INPUT 3
OUTPUT 2
11
-VDD
NC
12
+INPUT 4
OUTPUT 3
13
-INPUT 4
-INPUT 3
14
OUTPUT 4
+INPUT 3
15
---
NC
16
---
-VDD
17
---
NC
18
---
+INPUT 4
19
---
-INPUT 4
20
---
OUTPUT 4
NC = No connection
FIGURE 1. Terminal connections.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition B or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
(2) TA = +125C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
4.4.1 Group A inspection.
a.
Tests shall be as specified in table II herein.
b.
Subgroups 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
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TABLE II. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
---
Device
class Q
---
1,2,3,4,5,6 1/
Device
class V
---
1,2,3,4,5,6
1,2,3,4, 1/
5,6
1,2,3,4,5,6
1,2,3,4, 1/
5,6
1,2,3,4,5,6
1
1
1
1
1
1
---
---
---
1/ PDA applies to subgroup 1 with exception of VIO.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition B or D. The test circuit shall be maintained by the manufacturer under document revision level control
and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs,
outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
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4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table II herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25C 5C,
after exposure, to the subgroups specified in table II herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires
configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and
this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DLA Land and Maritime -VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime -VA, Columbus, Ohio 43218-3990,
or telephone (614) 692-0540.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime -VA and
have agreed to this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DLA Land and Maritime -VA.
STANDARD
MICROCIRCUIT DRAWING
DLA LAND AND MARITIME
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-93182
A
REVISION LEVEL
E
SHEET
11
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 11-05-04
Approved sources of supply for SMD 5962-93182 are listed below for immediate acquisition information only and
shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be
revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a
certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information
bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime
maintains an online database of all current sources of supply at http://www.dscc.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-9318201MCA
01295
TLC2274MJB
5962-9318201QDA
01295
TLC2274MWB
5962-9318201M2A
01295
TLC2274MFKB
5962-9318202QCA
01295
TLC2274AMJB
5962-9318202QDA
01295
TLC2274AMWB
5962-9318202Q2A
01295
TLC2274AMFKB
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
01295
Vendor name
and address
Texas Instruments, Inc.
Semiconductor Group
8505 Forest Lane
P.O. Box 660199
Dallas, TX 75243
Point of contact: U.S. Highway 75 South
P.O. Box 84, M/S 853
Sherman, TX 75090-9493
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.
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