ROHM R6015ANZ

Data Sheet
10V Drive Nch MOSFET
R6015ANZ
 Dimensions (Unit : mm)
5.5
TO-3PF
15.5
0.44
4.5
2.0 3.0
2.0
2.5
2.0
3.5
16.5
16.5
14.5
26.5
Features
1) Low on-resistance.
2) Low input capacitance.
3) High ESD.
3.0
φ3.6
10.0
 Structure
Silicon N-channel MOSFET
14.8
0.75
(1) Gate
(2) Drain
(3) Source
 Application
Switching
 Packaging specifications
Type
Package
Code
Basic ordering unit (pieces)
R6015ANZ
Drain current
Continuous
VGSS
ID *3
(1) Gate
(2) Drain
(3) Source
Limits
Unit
600
30
V
V
15
A
Pulsed
Continuous
IS
*3
60
15
A
A
Pulsed
ISP
*1
60
A
Avalanche current
IAS
*2
Avalanche energy
EAS *2
PD *4
Tch
Tstg
7.5
15
110
A
mJ
W
150
55 to 150
C
C
Limits
1.13
Unit
C / W
Power dissipation
Channel temperature
Range of storage temperature
0.9
∗1
IDP *1
Source current
(Body Diode)
(3)
5.45
 Inner circuit
VDSS
Gate-source voltage
(2)
5.45
Bulk
360

 Absolute maximum ratings (Ta = 25C)
Symbol
Parameter
Drain-source voltage
(1)
(1)
(2)
(3)
1 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 L
500H, VDD=50V, RG=25, T ch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 TC=25°C
 Thermal resistance
Parameter
Channel to Case
Symbol
Rth (ch-c) *
* T C=25°C
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1/5
2011.10 - Rev.A
Data Sheet
R6015ANZ
 Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Symbol
Min.
Typ.
Max.
Unit
-
-
100
nA
VGS=30V, VDS=0V
600
-
-
V
ID=1mA, VGS=0V
IGSS
Drain-source breakdown voltage V(BR)DSS
Conditions
IDSS
-
-
100
A
VDS=600V, VGS=0V
VGS (th)
2.95
-
4.15
V
VDS=10V, ID=1mA
RDS (on)*
-
0.23
0.3

ID=7.5A, VGS=10V
l Yfs l*
4.5
-
-
S
VDS=10V, ID=7.5A
Input capacitance
Ciss
-
1700
-
pF
VDS=25V
Output capacitance
Coss
-
1120
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
80
-
pF
f=1MHz
Turn-on delay time
td(on) *
tr *
-
50
-
ns
VDD 300V, ID=7.5A
-
50
-
ns
VGS=10V
td(off) *
tf *
-
150
-
ns
RL=40
-
60
-
ns
RG=10
Qg *
Qgs *
Qgd *
-
50
-
nC
VDD 300V
-
8
20
-
nC
nC
ID=15A
VGS=10V
Min.
Typ.
Max.
Unit
-
-
1.5
V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Body diode characteristics (Source-Drain)
Parameter
Forward voltage
Symbol
VSD *
Conditions
IS=15A, VGS=0V
*パルス
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2/5
2011.10 - Rev.A
Data Sheet
R6015ANZ
Electrical characteristic curves
Fig.1 Normalized Transient Thermal Resistance
v.s. Pulse Width
Fig.2: Typical output characteristics(Ⅰ)
Ta=25℃
pulsed
1
0.1
0.01
VGS= 7.0V
30
VGS= 6.5V
VGS= 6.0V
20
VGS= 5.5V
10
VGS= 5.0V
0.001
Rth(ch-a)=28.6℃/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.01
0.1
1
10
VGS= 6.5V
10
VGS= 5.5V
5
100
0
1000
VGS= 4.5V
10
GATE THRESHOLD VOLTAGE: VGS(th) (V)
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.1
0.01
2
3
4
5
30
40
50
6
7
5
3
1
0
50
100
150
ID=7.5A
0.1
0
5
10
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.01
0.001
15
GATE-SOURCE VOLTAGE : VGS (V)
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10
100
VGS= 10V
Pulsed
0.4
ID= 15A
0.3
ID= 7.5A
0.2
VDS= 10V
Pulsed
10
1
0.1
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.01
0.1
0
-50
0.1
DRAIN CURRENT : ID (A)
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
ID=15A
0.2
0
1
Fig.9 Forward Transfer Admittance
vs. Drain Current
0.6
0.4
5
0.1
2
0.5
4
VGS= 10V
Pulsed
Fig.8 Static Drain-Source On-State
Resistance vs. Channel Temperature
Ta=25℃
pulsed
3
10
VDS= 10V
ID= 1mA
CHANNEL TEMPERATURE: Tch (°C)
0.6
2
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
4
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
0.3
1
DRAIN-SOURCE VOLTAGE: VDS (V)
6
0
-50
GATE-SOURCE VOLTAGE : VGS (V)
0.5
0
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
VDS= 10V
Pulsed
1
20
DRAIN-SOURCE VOLTAGE: VDS (V)
100
0
VGS= 5.0V
0
Fig.4 Typical Transfer Characteristics
1
VGS= 7.0V
VGS= 4.5V
Pulse width : Pw (s)
10
VGS= 8.0V
VGS= 6.0V
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
0.0001
VGS= 10.0V
15
0
0.0001
DRAIN CURRENT : ID (A)
Ta=25℃
pulsed
VGS= 8.0V VGS= 10.0V
DRAIN CURRENT: ID (A)
Ta=25℃
Single Pulse
Tester : TMR-850
DRAIN CURRENT: ID (A)
Normalized Transient Thermal Resistance : r（t）
10
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
Fig.3: Typical output characteristics(Ⅱ)
20
40
0
50
100
150
CHANNEL TEMPERATURE: Tch (°C)
3/5
0.001
0.001
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
2011.10 - Rev.A
Data Sheet
R6015ANZ
Fig.10 Source Current vs.
Sourse-Drain Voltage
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
100
Fig.12 Dynamic Input Characteristics
15
10000
10
1
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.1
0.01
1000
Ciss
Coss
100
Crss
10
Ta= 25℃
f= 1MHz
VGS= 0V
0.5
1
1.5
Ta= 25℃
VDD= 300V
ID= 15A
RG= 10Ω
Pulsed
10
5
0
1
0
0.01
SOURCE-DRAIN VOLTAGE : VSD (V)
0.1
1
10
100
1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.13 Reverse Recovery Time
vs.Source Current
0
10
20
30
40
50
60
70
TOTAL GATE CHARGE : Qg (nC)
Fig.14 Switching Characteristics
10000
1000
Ta= 25℃
VDD= 300V
VGS= 10V
RG= 10Ω
Pulsed
tf
SWITCHING TIME : t (ns)
REVERSE RECOVERY TIME: trr (ns)
GATE-SOURCE VOLTAGE : VGS (V)
CAPACITANCE : C (pF)
SOURCE CURRENT : IS (A)
VGS= 0V
Pulsed
100
Ta= 25℃
di / dt= 100A / μs
VGS= 0V
Pulsed
1000
td(off)
100
10
td(on)
tr
1
10
0.1
1
10
100
SOURCE CURRENT : IS (A)
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0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
4/5
2011.10 - Rev.A
Data Sheet
R6015ANZ
 Measurement circuits
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
ton
Fig.1-1 Switching Time Measurement Circuit
90%
td(off)
tr
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
RL
Qg
VGS
D.U.T.
IG(Const.)
Qgs
Qgd
VDD
RG
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate Charge Measurement Circuit
VGS
IAS
VDS
V(BR)DSS
D.U.T.
RG
L
VDD
IAS
VDD
EAS =
Fig.3-1 Avalanche Measurement Circuit
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1
2
L IAS
2
V(BR)DSS
V(BR)DSS - VDD
Fig.3-2 Avalanche Waveform
5/5
2011.10 - Rev.A
Notice
Notes
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R1120A