ROHM RSY160P05

RSY160P05
Transistors
4V Drive Pch MOSFET
RSY160P05
zDimensions (Unit : mm)
zStructure
Silicon P-channel MOSFET
TCPT
(2)
zFeatures
1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Same land pattern as CPT3 (D-PAK).
(1)
(3)
zApplication
Switching
zPackaging specifications
Package
Type
zEquivalent circuit
Taping
∗1
TL
Code
Basic ordering unit (pieces)
2500
RSY160P05
∗2
(1)
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(1) Gate
(2) Drain
(3) Source
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−45
±20
±16
±32
−16
−32
20
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Symbol
Rth (ch-c) ∗
Limits
6.25
Unit
°C / W
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Tc=25°C
zThermal resistance
Parameter
Channel to ambient
∗ Tc=25°C
1/5
RSY160P05
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
−
IGSS
Gate-source leakage
Drain-source breakdown voltage V(BR) DSS −45
Zero gate voltage drain current
−
IDSS
Gate threshold voltage
VGS (th) −1.0
−
Static drain-source on-state
RDS (on) ∗
−
resistance
−
Yfs ∗ 8.5
Forward transfer admittance
−
Ciss
Input capacitance
−
Output capacitance
Coss
Reverse transfer capacitance
−
Crss
td (on) ∗
Turn-on delay time
−
tr ∗
Rise time
−
t
d
(off) ∗
Turn-off delay time
−
tf ∗
Fall time
−
Total gate charge
−
Qg ∗
Gate-source charge
−
Qgs ∗
Gate-drain charge
−
Qgd ∗
Typ.
−
−
−
−
35
45
50
−
2150
250
150
13
30
90
105
17.0
5.2
5.5
Max.
±10
−
−1
−2.5
50
63
70
−
−
−
−
−
−
−
−
25.5
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS= ±20V, VDS=0V
ID= −1mA, VGS=0V
VDS= −45V, VGS=0V
VDS= −10V, ID= −1mA
ID= −16A, VGS= −10V
ID= −8A, VGS= −4.5V
ID= −8A, VGS= −4.0V
VDS= −10V, ID= −8A
VDS= −10V
VGS=0V
f=1MHz
ID= −10A
VDD −25V
VGS= −10V
RL=2.5Ω
RG=10Ω
VDD −25V ID= −10A
VGS= −5V
RL=2.5Ω RG=10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
Typ.
Max.
Unit
−
−
−1.2
V
Conditions
IS= −16A, VGS=0V
∗Pulsed
2/5
RSY160P05
Transistors
zElectrical characteristic curves
16
Ta=25°C
Pulsed
14
12
DRAIN CURRENT : -ID[A]
-10V
-6.0V
-4.5V
-4.0V
10
8
6
-3.0V
4
VGS= -2.5V
2
8
-3.0V
6
4
-2.8V
2
VGS= -2.5V
10
0.2
0.4
0.6
0.8
0
1
2
4
6
8
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
1
0.1
0
0
0.01
1.0
10
2.0
3.0
4.0
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.2 Typical Output Characteristics(Ⅱ)
Fig.3 Typical Transfer Characteristics
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
Ta=25°C
Pulsed
VGS= -4.0V
VGS= -4.5V
VGS= -10V
100
10
1
10
1000
VGS= -10V
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
1000
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
10
100
0.1
1
DRAIN-CURRENT : -ID[A]
10
100
10
0.1
1
10
10
0.1
100
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
1
10
100
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
FORWARD TRANSFER ADMITTANCE
: |Yfs| [S]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
100
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
100
1000
VGS= -4.0V
Pulsed
VGS= -4.5V
Pulsed
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
VDS= -10V
Pulsed
10
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
-10V
-4.0V
12
100
Ta=25°C
Pulsed
100
VDS= -10V
Pulsed
REVERSE DRAIN CURRENT : -Is [A]
DRAIN CURRENT : -ID[A]
14
DRAIN CURRENT : -ID[A]
16
10
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
1
0
0.1
1
10
100
DRAIN-CURRENT : -ID[A]
Fig.8 Forward Transfer Admittance vs.
Drain Current
VGS=0V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
3/5
RSY160P05
Transistors
160
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
Ta=25°C
Pulsed
ID= -16A
120
80
40
ID= -8A
Ta=25°C
VDD= -25V
VGS= -10V
RG=10Ω
Pulsed
tf
1000
td(off)
100
10
td(on)
tr
1
0
0
5
10
15
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source
0.01
0.1
1
10
100
DRAIN-CURRENT : -ID[A]
Fig.11 Switching Characteristics
10
GATE-SOURCE VOLTAGE : -VGS [V]
10000
200
8
6
4
Ta=25°C
VDD= -25V
ID= -10A
RG=10Ω
Pulsed
2
0
0
5
10
15
20
25
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
CAPACITANCE : C [pF]
Ciss
1000
Crss
100
Coss
Ta=25°C
f=1MHz
VGS=0V
10
0.01
0.1
1
10
30
100
GATE-SOURCE VOLTAGE : -VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
4/5
RSY160P05
Transistors
zMeasurement circuits
VGS
Pulse Width
ID
VDS
VGS
10%
50%
RL
50%
90%
D.U.T.
10%
RG
10%
VDD
VDS
90%
td(on)
90%
td(off)
tr
ton
Fig.14 Switching Time Test Circuit
tf
toff
Fig.15 Switching Time Waveforms
VG
VGS
ID
VDS
RL
Qg
VGS
D.U.T.
IG (Const.)
Qgs
RG
Qgd
VDD
Charge
Fig.16 Gate Charge Test Circuit
Fig.17 Gate Charge Waveform
5/5
Appendix
Notes
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wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account when
designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples of
application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or
exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility
whatsoever for any dispute arising from the use of such technical information.
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malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the
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Appendix1-Rev3.0