RSY160P05 Transistors 4V Drive Pch MOSFET RSY160P05 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET TCPT (2) zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Same land pattern as CPT3 (D-PAK). (1) (3) zApplication Switching zPackaging specifications Package Type zEquivalent circuit Taping ∗1 TL Code Basic ordering unit (pieces) 2500 RSY160P05 ∗2 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Gate (2) Drain (3) Source zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −45 ±20 ±16 ±32 −16 −32 20 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth (ch-c) ∗ Limits 6.25 Unit °C / W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Tc=25°C zThermal resistance Parameter Channel to ambient ∗ Tc=25°C 1/5 RSY160P05 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. − IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS −45 Zero gate voltage drain current − IDSS Gate threshold voltage VGS (th) −1.0 − Static drain-source on-state RDS (on) ∗ − resistance − Yfs ∗ 8.5 Forward transfer admittance − Ciss Input capacitance − Output capacitance Coss Reverse transfer capacitance − Crss td (on) ∗ Turn-on delay time − tr ∗ Rise time − t d (off) ∗ Turn-off delay time − tf ∗ Fall time − Total gate charge − Qg ∗ Gate-source charge − Qgs ∗ Gate-drain charge − Qgd ∗ Typ. − − − − 35 45 50 − 2150 250 150 13 30 90 105 17.0 5.2 5.5 Max. ±10 − −1 −2.5 50 63 70 − − − − − − − − 25.5 − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS= ±20V, VDS=0V ID= −1mA, VGS=0V VDS= −45V, VGS=0V VDS= −10V, ID= −1mA ID= −16A, VGS= −10V ID= −8A, VGS= −4.5V ID= −8A, VGS= −4.0V VDS= −10V, ID= −8A VDS= −10V VGS=0V f=1MHz ID= −10A VDD −25V VGS= −10V RL=2.5Ω RG=10Ω VDD −25V ID= −10A VGS= −5V RL=2.5Ω RG=10Ω ∗Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. Typ. Max. Unit − − −1.2 V Conditions IS= −16A, VGS=0V ∗Pulsed 2/5 RSY160P05 Transistors zElectrical characteristic curves 16 Ta=25°C Pulsed 14 12 DRAIN CURRENT : -ID[A] -10V -6.0V -4.5V -4.0V 10 8 6 -3.0V 4 VGS= -2.5V 2 8 -3.0V 6 4 -2.8V 2 VGS= -2.5V 10 0.2 0.4 0.6 0.8 0 1 2 4 6 8 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0 0 0.01 1.0 10 2.0 3.0 4.0 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-SOURCE VOLTAGE : -VDS[V] GATE-SOURCE VOLTAGE : -VGS[V] Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Fig.3 Typical Transfer Characteristics 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed VGS= -4.0V VGS= -4.5V VGS= -10V 100 10 1 10 1000 VGS= -10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 0.1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 10 100 0.1 1 DRAIN-CURRENT : -ID[A] 10 100 10 0.1 1 10 10 0.1 100 DRAIN-CURRENT : -ID[A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) 1 10 100 DRAIN-CURRENT : -ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) FORWARD TRANSFER ADMITTANCE : |Yfs| [S] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 100 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 100 1000 VGS= -4.0V Pulsed VGS= -4.5V Pulsed DRAIN-CURRENT : -ID[A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VDS= -10V Pulsed 10 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] -10V -4.0V 12 100 Ta=25°C Pulsed 100 VDS= -10V Pulsed REVERSE DRAIN CURRENT : -Is [A] DRAIN CURRENT : -ID[A] 14 DRAIN CURRENT : -ID[A] 16 10 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 1 0 0.1 1 10 100 DRAIN-CURRENT : -ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current VGS=0V Pulsed 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1 1.2 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage 3/5 RSY160P05 Transistors 160 SWITCHING TIME : t [ns] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=25°C Pulsed ID= -16A 120 80 40 ID= -8A Ta=25°C VDD= -25V VGS= -10V RG=10Ω Pulsed tf 1000 td(off) 100 10 td(on) tr 1 0 0 5 10 15 GATE-SOURCE VOLTAGE : -VGS[V] Fig.10 Static Drain-Source On-State Resistance vs. Gate Source 0.01 0.1 1 10 100 DRAIN-CURRENT : -ID[A] Fig.11 Switching Characteristics 10 GATE-SOURCE VOLTAGE : -VGS [V] 10000 200 8 6 4 Ta=25°C VDD= -25V ID= -10A RG=10Ω Pulsed 2 0 0 5 10 15 20 25 TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 CAPACITANCE : C [pF] Ciss 1000 Crss 100 Coss Ta=25°C f=1MHz VGS=0V 10 0.01 0.1 1 10 30 100 GATE-SOURCE VOLTAGE : -VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage 4/5 RSY160P05 Transistors zMeasurement circuits VGS Pulse Width ID VDS VGS 10% 50% RL 50% 90% D.U.T. 10% RG 10% VDD VDS 90% td(on) 90% td(off) tr ton Fig.14 Switching Time Test Circuit tf toff Fig.15 Switching Time Waveforms VG VGS ID VDS RL Qg VGS D.U.T. IG (Const.) Qgs RG Qgd VDD Charge Fig.16 Gate Charge Test Circuit Fig.17 Gate Charge Waveform 5/5 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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