ROHM RYE002N05

0.9V Drive Nch MOSFET
RYE002N05
z Structure
Silicon N-channel MOSFET
z Dimensions (Unit : mm)
EMT3
(SC-75A)
<SOT-416>
zFeatures
1) High speed switing.
2) Small package(EMT3).
3) Ultra low voltage drive(0.9V drive).
Abbreviated symbol : QJ
z Application
Switching
z Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RYE002N05
z Inner circuit
(3)
Taping
TCL
3000
{
z Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Limits
Unit
50
±8
V
V
±200
±800
125
mA
mA
mA
800
150
mA
mW
Tch
Tstg
150
−55 to +150
°C
°C
Symbol
Limits
Unit
833
°C / W
Continuous
VDSS
VGSS
ID
Pulsed
Continuous
Pulsed
IDP
IS
ISP
*1
PD
*2
Power dissipation
Channel temperature
Range of storage temperature
*1
(1) Source
(2) Gate
(3) Drain
(1)
(2)
(2)
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw≤10µs, Duty cycle≤1%
*2 Each terminal mounted on a recommended land.
z Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a)*
* Each terminal mounted on a recommended land.
www.rohm.com
©2011 ROHM Co., Ltd. All rights reserved.
1/5
2011.05 - Rev.B
RYE002N05
Data Sheet
z Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V (BR)DSS
Min.
Conditions
Typ.
Max.
Unit
-
-
±10
µA
VGS=±8V, VDS=0V
50
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
µA
VDS=50V, VGS=0V
VGS (th)
0.3
-
0.8
V
VDS=10V, ID=1mA
-
1.6
2.2
-
1.7
2.4
-
2.0
2.8
-
2.2
3.3
ID=100mA, VGS=1.2V
-
3.0
9.0
ID=10mA, VGS=0.9V
l Yfs l*
0.2
-
-
Input capacitance
Ciss
-
26
-
pF
VDS=10V
Output capacitance
Coss
-
6
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
3
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
5
-
ns
ID=100mA, VDD 25V
tr *
-
8
-
ns
VGS=4.5V
td(off) *
tf *
-
17
43
-
ns
ns
RL=250Ω
RG=10Ω
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
*
RDS (on)
Rise time
Turn-off delay time
Fall time
ID=200mA, VGS=4.5V
ID=200mA, VGS=2.5V
Ω
S
ID=200mA, VGS=1.5V
ID=200mA, VDS=10V
*Pulsed
zBody diode characteristics (Source-Drain) (Ta = 25°C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
-
-
1.2
Unit
V
Conditions
Is=200mA, VGS=0V
*Pulsed
www.rohm.com
©2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.05 - Rev.B
Data Sheet
RYE002N05
z Electrical characteristic curves (Ta = 25°C)
0.2
1
0.1
DRAIN CURRENT : ID[A]
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.9V
Ta=25°C
Pulsed
VGS= 0.8V
VGS= 4.5V
VGS= 2.5V
VGS= 1.5V
VGS= 1.2V
VGS= 0.9V
0.1
VGS= 0.8V
0.4
0.6
0.8
1
0
2
4
6
8
0
10
0.2
0.4
0.6
0.8
1
GATE-SOURCE VOLTAGE : VGS[V]
Fig.1 Typical Output Characteristics( Ⅰ)
Fig.2 Typical Output Characteristics( Ⅱ)
Fig.3 Typical Transfer Characteristics
Ta= 25°C
Pulsed
1000
VGS= 0.9V
VGS= 1.2V
VGS= 1.5V
VGS= 2.5V
VGS= 4.5V
100
0.001
0.01
0.1
1
10000
VGS= 4.5V
Pulsed
1000
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
100
0.001
DRAIN-CURRENT : ID[A]
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
100
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)
www.rohm.com
©2011 ROHM Co., Ltd. All rights reserved.
0.1
VGS= 2.5V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
1000
100
1
0.001
10000
VGS= 1.2V
Pulsed
1000
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
100
0.001
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅴ)
3/5
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= 1.5V
Pulsed
0.001
0.01
10000
DRAIN-CURRENT : ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)
1000
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
DRAIN-SOURCE VOLTAGE : VDS[V]
10000
10000
0.01
DRAIN-SOURCE VOLTAGE : VDS[V]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
0.2
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
0.1
0.001
0
0
VDS= 10V
Pulsed
VGS= 0.7V
VGS= 0.7V
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
Ta=25°C
Pulsed
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
DRAIN CURRENT : ID[A]
VGS= 4.5V
DRAIN CURRENT : ID[A]
0.2
10000
VGS= 0.9V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
1000
100
0.001
0.01
0.1
1
10
DRAIN-CURRENT : ID[A]
Fig.9 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅵ)
2011.05 - Rev.B
Data Sheet
1
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= − 25°C
1
0
0.5
1
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.10 Forward Transfer Admittance
vs. Drain Current
Fig.11 Reverse Drain Current
vs. Sourse-Drain Voltage
td(off)
tf
100
Ta=25°C
VDD=25V
VGS=4.5V
RG=10Ω
Pulsed
10
td(on)
tr
1
0.1
1
DRAIN-CURRENT : ID[A]
Fig.13 Switching Characteristics
www.rohm.com
©2011 ROHM Co., Ltd. All rights reserved.
5000
Ta=25°C
Pulsed
4000
ID= 0.01A
3000
ID= 0.20A
2000
1000
0
1.5
DRAIN-CURRENT : ID[A]
GATE-SOURCE VOLTAGE : VGS [V]
SWITCHING TIME : t [ns]
VGS=0V
Pulsed
0.01
0.1
1000
0.01
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
1
VDS= 10V
Pulsed
0
2
4
6
8
GATE-SOURCE VOLTAGE : VGS[V]
Fig.12 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
1000
Ta=25°C
f=1MHz
VGS=0V
4
3
2
Ta=25°C
VDD=25V
ID= 0.2A
RG=10Ω
Pulsed
1
0
0
0.5
1
1.5
CAPACITANCE : C [pF]
10
SOURCE CURRENT : Is [A]
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
RYE002N05
100
Ciss
10
Crss
Coss
1
0.01
0.1
1
10
100
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.14 Typical Capacitance
vs. Drain-Source Voltage
Fig.15 Typical Capacitance
vs. Drain-Source Voltage
4/5
2011.05 - Rev.B
RYE002N05
Data Sheet
z Measurement circuits
Pulse width
VGS
ID
VDS
RL
50%
10%
D.U.T.
RG
90%
50%
10%
VGS
VDS
VDD
90%
td(on)
tr
ton
Fig.1-1 Switching time measurement circuit
10%
90%
td(off)
tf
toff
Fig.1-2 Switching waveforms
z Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
www.rohm.com
©2011 ROHM Co., Ltd. All rights reserved.
5/5
2011.05 - Rev.B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
R1120A