Bulletin I2162 rev. A 06/03 SAFEIR Series 40TPS16 PHASE CONTROL SCR VT < 1.45V @ 40A ITSM = 500A VRRM = 1600V Description/Features The 40TPS16 SAFEIR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125°C junction temperature. Low Igt parts available. Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines. Major Ratings and Characteristics Characteristics IT(AV) Sinusoidal Package Outline 40TPS16 Units 35 A 55 A 1600 V 500 A 1.45 V 1000 V/µs 100 A/µs - 40 to 125 °C waveform IRMS VRRM/ VDRM Range (*) ITSM VT @ 40 A, TJ = 25°C dv/dt di/dt TJ TO-247AC (*) Contact Factory www.irf.com 1 40TPS16 SAFEIR Series Bulletin I2162 rev. A 06/03 Voltage Ratings Part Number VRRM/ V DRM, max. repetitive VRSM , maximum non repetitive IRRM/ I DRM peak and off-state voltage peak reverse voltage 125°C V V mA 1600 1700 10 40TPS16 Absolute Maximum Ratings Parameters IT(AV) IT(RMS) Max. Continuous RMS Conditions 40TPS16 Units Max. Average On-state Current 35 A @ TC = 79° C, 180° conduction half sine wave A 10ms Sine pulse, rated VRRM applied Initial 10ms Sine pulse, no voltage reapplied TJ = TJ max. 55 On-state Current As AC switch ITSM 2 It Max. Peak One Cycle Non-Repetitive 500 Surge Current 600 2 Max. I t for Fusing 1250 2 A s 1760 2 I √t 2 Max. I √t for Fusing VT(TO)1 Low Level Value of Threshold 10ms Sine pulse, rated VRRM applied 10ms Sine pulse, no voltage reapplied 12500 2 A √s t = 0.1 to 10ms, no voltage reapplied 1.02 V TJ = 125°C Voltage VT(TO)2 High Level Value of Threshold 1.23 Voltage rt1 Low Level Value of On-state 9.74 mΩ Slope Resistance rt2 High Level Value of On-state 7.50 Slope Resistance VTM Max. Peak On-state Voltage 1.85 V di/dt Max. Rate of Rise of Turned-on Current 100 A/µs mA @ 110A, TJ = 25°C TJ = 25°C IH Max. Holding Current 150 IL Max. Latching Current 300 IRRM / Max. Reverse and Direct 0.5 TJ = 25°C IDRM Leakage Current 10 TJ = 125°C Max. Rate of Rise 1000 dv/dt V/µs VR = rated VRRM/ VDRM TJ = TJ max., linear to 80% V DRM , R g-k = open of Off-state Voltage 2 www.irf.com 40TPS16 SAFEIR Series Bulletin I2162 rev. A 06/03 Triggering Parameters PGM Max. peak Gate Power 10 PG(AV) Max. average Gate Power 2.5 IGM Max. peak Gate Current IGT W 2.5 A 10 V - VGM Max. peak negative Gate Voltage VGT Conditions 40TPS16 Units Max. required DC Gate Voltage 4.0 TJ = - 40°C Anode supply = 6V to trigger 2.5 TJ = 25°C resistive load 1.7 TJ = 125°C Max. required DC Gate Current 270 to trigger 150 mA TJ = 25°C 80 TJ = 125°C 40 TJ = - 40°C TJ = 25°C, for 40TPS08A VGD Max. DC Gate Voltage not to trigger 0.25 V IGD Max. DC Gate Current not to trigger 6 mA TJ = 125°C, V DRM = rated value Thermal-Mechanical Specifications Parameters Conditions 40TPS16 Units TJ Max. Junction Temperature Range - 40 to 125 Tstg Max. Storage Temperature Range - 40 to 125 RthJC Max. Thermal Resistance Junction 0.6 °C °C/W DC operation to Case RthJA Max. Thermal Resistance Junction 40 to Ambient RthCS Max. Thermal Resistance Case 0.2 Mounting surface, smooth and greased to Heatsink wt Approximate Weight T Mounting Torque Case Style www.irf.com 6 (0.21) g (oz.) Min. 6 (5) Kg-cm Max. 12 (10) (lbf-in) TO-247AC 3 40TPS16 SAFEIR Series 40TPS.. Series R thJC (DC) = 0.6 °C/ W 120 110 Conduction Angle 100 30° 90° 120° 180° 80 0 10 20 30 40 110 Conduction Period 100 30° 90 60° 90° 120° 80 180° DC 70 0 10 20 30 40 50 Average On-state Current (A) RMS Limit 30 20 Conduction Angle 40TPS.. Series TJ= 125°C 10 0 5 10 15 20 25 30 35 60 80 DC 180° 120° 90° 60° 30° 70 60 50 40 RMSLimit 30 Conduction Period 20 40TPS.. Series TJ = 125°C 10 0 40 0 10 20 30 40 50 60 Avera ge On-sta te Current (A) Avera ge On-sta te Current (A) Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics 550 At Any Ra ted Load Condition And With Rated V RRM Ap plied Following Surge. Initia l TJ= 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 500 450 400 350 300 250 40TPS.. Series 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 4 120 Fig. 2 - Current Rating Characteristics 180° 120° 90° 60° 30° 40 40TPS.. Series RthJC (DC) = 0.6 °C/ W Average On-state Current (A) 60 50 130 Fig. 1 - Current Rating Characteristics Maximum Averag e On-state Power Loss (W) 70 0 Peak Half Sine Wave On-state Current (A) 60° 90 Maximum Allowable Case Temperature (°C) 130 Peak Half Sine Wa ve On-state Current (A) Maximum Avera g e On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Bulletin I2162 rev. A 06/03 600 Ma ximum Non Rep etitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reap p lied Rated VRRM Reap p lied 550 500 450 400 350 300 40TPS.. Series 250 0.01 0.1 1 Pulse Tra in Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.irf.com 40TPS16 SAFEIR Series Bulletin I2162 rev. A 06/03 Instanta neous On-sta te Current (A) 100 10 TJ= 25°C TJ= 125°C 40TPS.. Series 1 0.5 1 1.5 2 Instantaneous On-state Voltag e (V) Fig. 7 - On-state Voltage Drop Characteristics 10 Rec tangular gate pulse a)Rec ommended load line for rated di/ dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Rec ommended load line for <= 30% rated di/ dt: 20 V, 65 ohms tr = 1 µs, tp >= 6 µs (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) VGD IGD 0.1 0.001 TJ = -40 °C TJ = 125 °C 1 TJ = 25 °C Instantaneous Gate Voltage (V) 100 (4) (3) 40TPS.. 0.01 0.1 (2) (1) Frequenc y Limited by PG(AV) 1 10 100 1000 Instantaneous Gate Current (A) Transient Thermal Impeda nc e Z thJC (°C/W) Fig. 8 - GateCharacteristics 1 0.1 Steady State Value (DC Opera tion) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 40TPS.. Series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics www.irf.com 5 40TPS16 SAFEIR Series Bulletin I2162 rev. A 06/03 Outline Table 3. 65 ( 0 .14 4) 15 .90 (0 .626 ) 3. 55 ( 0 .13 9) DIA. 15 .30 (0 .602 ) 5. 30 ( 0 .20 9) 4.70 ( 0.185) 2.5 ( 0.098) 1.5 ( 0.059) 5. 70 (0 .22 5) 5.30 ( 0.208) 20 .30 (0 .800 ) 19 .70 (0 .775 ) 5.50 ( 0.217) 4. 50 (0 .17 7) 1 2 ( 2 PLCS.) 3 14. 80 ( 0.583) 14 .20 (0 .559 ) 4. 30 ( 0 .17 0) 3. 70 ( 0 .14 5) 2. 20 (0 .08 7) 1. 40 ( 0 .05 6) 2. 40 (0 .09 5) M AX. M AX. 1. 00 ( 0 .03 9) 0.80 ( 0.032) 0. 40 ( 0 .21 3) 10. 94 ( 0.430) 10 .86 ( 0 .427 ) Dimensions in millimeters and inches Marking Information EXAMPLE: THIS IS A 40TPS16 WITH ASSEMBLY LOT CODE 6158 ASSEMBLED ON WW 40, 2000 IN THE ASSEMBLY LINE "H" INTERNATIONAL RECTIFIER LOGO 40TPS16 040H 61 ASSEMBLY LOT CODE 6 PART NUMBER 58 DATE CODE YEAR 0 = 2000 WEEK 40 LINE H www.irf.com 40TPS16 SAFEIR Series Bulletin I2162 rev. A 06/03 Ordering Information Table Device Code 40 T P S 16 1 2 3 4 5 1 - Current Rating 2 - Circuit Configuration: 3 - 2 (A) 1 (K) (G) 3 T = Thyristor Package: P = TO-247 4 - Type of Silicon: S = Standard Recovery Rectifier 5 - Voltage code: Code x 100 = VRRM 16 = 1600V (*) (*) Contact Factory Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 06/03 www.irf.com 7