PD-96-957 RevD Integrated Power Hybrid IC for Appliance Motor Drive Applications. Description IRAMX16UP60B Series 16A, 600V with Internal Shunt Resistor International Rectifier's IRAMX16UP60B is a 16A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as well as for light industrial application. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low VCE(on) Punch-Through IGBT technology and the industry benchmark 3 phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in temperature monitor and over-current protection, along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a Single in line package (SiP2) with full transfer mold structure minimizes PCB space and resolve isolation problems to heatsink. Features • • • • • • • • • Internal Shunt Resistor Integrated Gate Drivers and Bootstrap Diodes Temperature Monitor Low VCE(on) Non Punch Through IGBT Technology Undervoltage lockout for all channels Matched propagation delay for all channels Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity • Motor Power range 0.75~2.2kW / 85~253 Vac • Isolation 2000VRMS min • UL certification pending (UL number: E78996) Absolute Maximum Ratings Parameter Description VCES / VRRM IGBT/Diode Blocking Voltage Value 600 V+ Positive Bus Input Voltage 450 IO @ TC=25°C RMS Phase Current (Note 1) 16 IO @ TC=100°C RMS Phase Current (Note 1) 8 IO Pulsed RMS Phase Current (Note 2) 30 FPWM PWM Carrier Frequency 20 PD Power dissipation per IGBT @ TC =25°C 31 W VISO Isolation Voltage (1min) 2000 VRMS TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150 TJ (Driver IC) Operating Junction temperature Range -40 to +150 T Mounting torque Range (M3 screw) 0.5 to 1.0 Units V A kHz °C Nm Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=16kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms; TC=25°C; FPWM=16kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics" www.irf.com 1 IRAMX16UP60B Internal Electrical Schematic - IRAMX16UP60B V+ (10) V- (12) VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) 23 VS1 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 LO1 16 24 HO1 25 VB1 1 VCC HIN1 (15) HIN2 (16) HIN3 (17) 2 HIN1 LIN1 (18) 5 LIN1 3 HIN2 Driver IC LO2 15 LO3 14 4 HIN3 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LIN2 (19) LIN3 (20) FLT-EN(21) ITRIP (22) VTH (13) THERMISTOR VCC (14) VSS (23) 2 www.irf.com IRAMX16UP60B Absolute Maximum Ratings (Continued) All voltages are absolute referenced to COM/ITRIP. Symbol Parameter IBDF Units Conditions Min Max Bootstrap Diode Peak Forward Current --- 4.5 A tP= 10ms, TJ = 150°C, TC=100°C PBR Peak Bootstrap Resistor Peak Power (Single Pulse) --- 25.0 W tP=100µs, TC =100°C ESR / ERJ series VS1,2,3 High side floating supply offset voltage VB1,2,3 - 25 VB1,2,3 +0.3 V VB1,2,3 High side floating supply voltage -0.3 600 V VCC Low Side and logic fixed supply voltage -0.3 20 V VIN, VEN, VITRIP Input voltage LIN, HIN, EN, ITrip -0.3 Lower of (VSS+15V) or VCC+0.3V V Inverter Section Electrical Characteristics @TJ= 25°C Units Conditions Symbol Parameter Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage 600 --- --- V VIN=5V, IC=250µA ∆V(BR)CES / ∆T Temperature Coeff. Of Breakdown Voltage --- 0.3 --- V/°C VIN=5V, IC=1.0mA (25°C - 150°C) VCE(ON) Collector-to-Emitter Saturation Voltage --- 1.55 1.85 --- 1.80 2.10 ICES Zero Gate Voltage Collector Current --- 5 80 --- 165 --- VFM Diode Forward Voltage Drop --- 2.0 2.4 --- 1.4 1.9 VBDFM Bootstrap Diode Forward Voltage Drop -- -- 1.25 --- --- 1.10 V µA V V IC=8A, VCC=15V IC=8A, VCC=15V, TJ=150°C VIN=5V, V+=600V VIN=5V, V+=600V, TJ=150°C IC=8A IC=8A, TJ=150°C IF=1A IF=1A, TJ=125°C RBR Bootstrap Resistor Value --- 22 --- Ω TJ=25°C ∆RBR/RBR Bootstrap Resistor Tolerance --- --- ±5 % TJ=25°C IBUS_TRIP Current Protection Threshold (positive going) 21 --- 28 A TJ=-40°C to 125°C See Fig. 2 www.irf.com 3 IRAMX16UP60B Inverter Section Switching Characteristics @ TJ= 25°C Symbol Parameter Min Typ Max EON Turn-On Switching Loss --- 315 435 EOFF Turn-Off Switching Loss --- 150 180 ETOT Total Switching Loss --- 465 615 EREC Diode Reverse Recovery energy --- 30 60 tRR Diode Reverse Recovery time --- 70 90 EON Turn-on Switching Loss --- 500 700 EOFF Turn-off Switching Loss --- 270 335 ETOT Total Switching Loss --- 770 1035 EREC Diode Reverse Recovery energy --- 60 100 tRR Diode Reverse Recovery time --- 120 150 QG Turn-On IGBT Gate Charge RBSOA Reverse Bias Safe Operating Area --- 56 84 Units Conditions µJ IC=8A, V+=400V VCC=15V, L=2mH Energy losses include "tail" and diode reverse recovery See CT1 ns µJ IC=8A, V+=400V VCC=15V, L=2mH, TJ=150°C Energy losses include "tail" and diode reverse recovery See CT1 ns nC + IC=15A, V =400V, VGE=15V TJ=150°C, IC=8A, VP=600V V+= 450V VCC=+15V to 0V FULL SQUARE See CT3 TJ=150°C, VP=600V, SCSOA Short Circuit Safe Operating Area 10 --- --- µs V+= 360V, VCC=+15V to 0V See CT2 TJ=150°C, VP=600V, tSC<10µs ICSC Short Circuit Collector Current --- 140 --- A V+= 360V, VGE=15V VCC=+15V to 0V See CT2 Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommende conditions. All voltages are absolute referenced to COM/ITRIP. The VS offset is tested with all supplies biased at 15V differential (Note 3) Symbol Definition Min Max VB1,2,3 High side floating supply voltage VS+12 VS+20 VS1,2,3 High side floating supply offset voltage Note 4 450 VCC Low side and logic fixed supply voltage 12 20 VITRIP ITRIP input voltage VSS VSS+5 VIN Logic input voltage LIN, HIN VSS VSS+4 V Logic input voltage EN VSS VSS+5 V VEN Units V V Note 3: For more details, see IR21363 data sheet Note 4: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details) 4 www.irf.com IRAMX16UP60B Static Electrical Characteristics Driver Function VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are applicable to all six channels. (Note 3) Symbol Definition Min Typ Max Units VINH , VENH Logic "0" input voltage 3.0 --- --- V VINL , VENL Logic "1" input voltage --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS supply undervoltage Positive going threshold 10.6 11.1 11.6 V VCCUV-, VBSUV- VCC and VBS supply undervoltage Negative going threshold 10.4 10.9 11.4 V VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V VIN,Clamp Input Clamp Voltage (HIN, LIN, ITRIP) IIN=10µA 4.9 5.2 5.5 V IQBS Quiescent VBS supply current VIN=0V --- --- 165 µA --- 3.35 mA IQCC Quiescent VCC supply current VIN=0V --- ILK Offset Supply Leakage Current --- --- 60 µA IIN+, IEN+ Input bias current VIN=5V --- 200 300 µA IIN-, IEN- Input bias current VIN=0V --- 100 220 µA ITRIP+ ITRIP bias current VITRIP=5V --- 30 100 µA ITRIP- ITRIP bias current VITRIP=0V --- 0 1 µA 440 490 540 mV V(ITRIP) ITRIP threshold Voltage V(ITRIP, HYS) ITRIP Input Hysteresis --- 70 --- mV RON,FLT Fault Output ON Resistance --- 50 100 ohm Dynamic Electrical Characteristics Driver only timing unless otherwise specified. Symbol Parameter TON Input to Output propagation turnon delay time (see fig.11) Min Typ Max --- 590 --- Units Conditions ns TOFF Input to Output propagation turnoff delay time (see fig. 11) --- 660 --- ns TFLIN Input Filter time (HIN, LIN) 100 200 --- ns TBLT-Trip ITRIP Blancking Time 100 150 DT Dead Time (VBS=VDD=15V) 220 290 MT Matching Propagation Delay Time (On & Off) --- TITrip ITrip to six switch to turn-off propagation delay (see fig. 2) TFLT-CLR Post ITrip to six switch to turn-off clear time (see fig. 2) www.irf.com VCC=VBS= 15V, IC=8A, V+=400V VIN=0 & VIN=5V ns VIN=0 & VIN=5V 360 ns VBS=VCC=15V 40 75 ns --- --- 1.75 µs --- 7.7 --- --- 6.7 --- ms VCC= VBS= 15V, external dead time> 400ns VCC=VBS= 15V, IC=8A, V+=400V TC = 25°C TC = 100°C 5 IRAMX16UP60B Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Rth(J-C) Thermal resistance, per IGBT --- 3.5 4.0 Rth(J-C) Thermal resistance, per Diode --- 5.0 5.5 Rth(C-S) Thermal resistance, C-S --- 0.1 --- CD Creepage Distance 3.2 --- --- Units Conditions Flat, greased surface. Heatsink °C/W compound thermal conductivity 1W/mK See outline Drawings mm Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter Min Typ Max RShunt Resistance 17.9 18.1 18.3 Units Conditions mΩ TCoeff Temperature Coefficient 0 --- 200 ppm/°C PShunt Power Dissipation --- --- 3.0 W TRange Temperature Range -40 --- 125 °C TC = 25°C -40°C< TC <100°C Internal NTC - Thermistor Characteristics Parameter Definition Min Typ Max R25 Resistance 97 100 103 kΩ TC = 25°C R125 Resistance 2.25 2.52 2.80 kΩ TC = 125°C B B-constant (25-50°C) 4165 4250 4335 k 125 °C Temperature Range -40 Typ. Dissipation constant Units Conditions R2 = R1e [B(1/T2 - 1/T1)] mW/°C TC = 25°C 1 Input-Output Logic Level Table V+ Ho Hin1,2,3 (15,16,17) U,V,W IC Driver (8,5,2) Lin1,2,3 (18,19,20) 6 Lo FLT- EN ITRIP 1 1 1 1 0 0 0 0 1 X HIN1,2,3 LIN1,2,3 0 1 1 X X 1 0 1 X X U,V,W V+ 0 Off Off Off www.irf.com IRAMX16UP60B HIN1,2,3 LIN1,2,3 1 IBUS 2 3 4 5 6 IBUS_trip 6µs 1µs 50% U,V,W tfltclr Sequence of events: 1-2) Current begins to rise 2) Current reaches IBUS_Trip level 2-3) Current is higher than IBUS_Trip for at least 6µs. This value is the worst-case condition with very low over-current. In case of high current (short circuit), the actual delay will be smaller. 3-4) Delay between driver identification of over-current condition and disabling of all outputs 4) Current starts decreasing, eventually reaching 0 5) Current goes below IBUS_trip, the driver starts its auto-reset sequence 6) Driver is automatically reset and normal operation can resume (over-current condition must be removed by the time the drivers automatically resets itself) Figure 2. ITrip Timing Waveform Note 5: The shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAMX16UP60B Module Pin-Out Description Pin Name 1 VB3 2 W,VS3 Description High Side Floating Supply Voltage 3 Output 3 - High Side Floating Supply Offset Voltage 3 NA none 4 VB2 High Side Floating Supply voltage 2 5 V,VS2 6 NA none 7 VB1 High Side Floating Supply voltage 1 8 U, VS1 9 NA Output 2 - High Side Floating Supply Offset Voltage Output 1 - High Side Floating Supply Offset Voltage none + 10 V 11 NA Positive Bus Input Voltage none - Negative Bus Input Voltage 12 V 13 VTH Temperature Feedback 14 VCC +15V Main Supply 15 HIN1 Logic Input High Side Gate Driver - Phase 1 16 HIN2 Logic Input High Side Gate Driver - Phase 2 17 HIN3 Logic Input High Side Gate Driver - Phase 3 18 LIN1 Logic Input Low Side Gate Driver - Phase 1 19 LIN2 Logic Input Low Side Gate Driver - Phase 2 20 LIN3 Logic Input Low Side Gate Driver - Phase 3 21 FAULT 22 ITRIP Current Sense and Itrip Pin 23 VSS Negative Main Supply Fault Indicator 1 23 8 www.irf.com IRAMX16UP60B Typical Application Connection IRAMX16UP60B VB3 2.2µF VS3 W VB2 VS2 V VB1 VS1 U V DC BUS CAPACITORS + V- +5V Vcc (15 V) +15V +5V HIN1 0.1mF 10mF 12kohm HIN2 HIN3 LIN1 Temp Monitor LIN2 LIN3 CONTROLLER 035-Z2L03 VTH IRAMX16UP60B 3-Phase AC MOTOR 1 BOOT-STRAP CAPACITORS Fault/Enable ITRIP VSS +5V 23 Enable 1K 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. Current sense signal can be obtained from pin 20 and pin 23. Care should be taken to avoid having inverter current flowing through pin 22 to mantain required current measurement accuracy 5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 6. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 7. Fault/Enable pin must be pulled-up to +5V. www.irf.com 9 Maximum Output Phase RMS Current - A IRAMX16UP60B 14 12 10 8 6 TC = 100°C 4 TC = 110°C TC = 120°C 2 TJ = 150°C Sinusoidal Modulation 0 0 2 4 6 8 10 12 14 16 18 20 PWM Frequency - kHz Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Maximum Output Phase RMS Current - A V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6 10 TJ = 150°C Sinusoidal Modulation 8 6 FPWM = 20kHz 4 FPWM = 16kHz FPWM = 12kHz 2 0 1 10 100 Modulation Frequency - Hz Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency V+=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6 10 www.irf.com IRAMX16UP60B Total Power Losses - W 150 TJ = 150°C 125 Sinusoidal Modulation 100 75 FPWM = 12 kHz 50 FPWM = 16 kHz FPWM = 20 kHz 25 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Output Phase Current - ARMS Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6 Total Power Losses - W 150 TJ = 150°C 125 Sinusoidal Modulation 100 75 FPWM = 12 kHz 50 FPWM = 16 kHz FPWM = 20 kHz 25 0 0 1 2 3 4 5 6 7 8 9 10 11 12 Output Phase Current - ARMS Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation VBUS=400V , TJ=150°C, www.irf.com Modulation Depth=0.8, PF=0.6 11 Maximum Allowable Case Temperature -°C IRAMX16UP60B 160 140 120 100 80 FPWM = 12 kHz 60 FPWM = 16 kHz 40 Sinusoidal Modulation 20 0 FPWM = 20 kHz TJ = 150°C 0 2 4 6 8 10 12 14 Output Phase Current - ARMS Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase IGBT Junction Temperature - °C 160 TJ avg. = 1.2447 x TTherm+ 30.77 150 140 130 120 110 100 65 70 75 80 85 90 95 100 Internal Thermistor Temperature Equivalent Read Out - °C Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature 12 www.irf.com IRAMX16UP60B Thermistor Pin Read-Out Voltage - V 5.0 +5V 4.5 4.0 TTHERM RTHERM TTHERM °C Ω °C -40 4397119 25 3.5 RTHERM Ω 100000 TTHERM °C 90 RTHERM Ω 7481 -35 3088599 30 79222 95 6337 -30 2197225 35 63167 100 5384 -25 1581881 40 50677 105 4594 -20 1151037 45 40904 110 3934 -15 846579 50 33195 115 3380 2.0 -10 628988 55 27091 120 2916 -5 471632 60 22224 125 2522 1.5 0 357012 65 18322 130 2190 3.0 2.5 1.0 5 272500 70 15184 135 1907 10 209710 75 12635 140 1665 15 162651 80 10566 145 1459 20 127080 85 8873 150 1282 0.5 -40 -30 -20 -10 0 10 20 30 REXT VTherm R Therm Min Avg. Max 40 50 60 70 80 90 100 110 120 130 Thermistor Temperature - °C Recommended Bootstrap Capacitor - µF Figure 9. Thermistor Readout vs. Temperature (12kohm pull-up resistor, 5V) and Nominal Thermistor Resistance values vs. Temperature Table. 16.0 15µF 15.0 14.0 V+ RBS 13.0 DBS CBS vB 12.0 +15V 11.0 10µF 10.0 VCC HIN HIN LIN LIN VSS COM 9.0 RG1 HO U,V,W VS RG2 LO VSS 8.0 GND 6.8µF 7.0 6.0 4.7µF 5.0 4.0 3.3µF 3.0 2.0 0 5 10 15 20 PWM Frequency - kHz Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency www.irf.com 13 IRAMX16UP60B Figure 11. Switching Parameter Definitions VCE IC IC VCE 90% IC 50% HIN /LIN 90% IC 50% VCE HIN /LIN 50% HIN /LIN HIN /LIN 50% VCE 10% IC 10% IC tr tf TON TOFF Figure 11a. Input to Output Propagation turn-on Delay Time Figure 11b. Input to Output Propagation turn-off Delay Time IF VCE HIN/LIN Irr trr Figure 11c. Diode Reverse Recovery 14 www.irf.com IRAMX16UP60B V+ 5V Ho IN Hin1,2,3 IC Driver U,V,W IO Lo Lin1,2,3 Figure CT1. Switching Loss Circuit V+ Ho Hin1,2,3 1k VCC IN 10k Lin1,2,3 IC Driver 5VZD U,V,W IO Lo IN Io Figure CT2. S.C.SOA Circuit V+ Ho Hin1,2,3 1k IN 10k VCC IC Driver 5VZD Lin1,2,3 IN U,V,W IO Lo Io Figure CT3. R.B.SOA Circuit www.irf.com 15 IRAMX16UP60B Package Outline IRAMX16UP60B note 2 62 3 A 56 note 3 Ø3.4 TYP. B 25.8 1 11.4 23 0.80 0.55 TYP. 0.70 22 PITCHES = 44 TYP. 4.7 2.5 0.45 11.4 REF A B 5.5 46.2 C 9.0 REF. Ø0.20 M INT. 2 TYP. 9 note 1 INT. 25.3 035-Z2L03 IRAMX16UP60B R0.6 TYP. 50 2 TYP. 5.0 3.2 MIN. CONVEX ONLY 0.10 C Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Convex only 0.15mm typical 5- Tollerances ±0.5mm, unless otherwise stated For mounting instruction see AN-1049 16 www.irf.com IRAMX16UP60B Package Outline IRAMX16UP60B-2 note 2 62 3 A 56 B 25.8 23 2 TYP. Ø0.20 M A B 0.80 0.55 TYP. 4.7 2.5 11.4 REF 22 PITCHES = 44 TYP. 13.9 1 5 note 1 11.4 IRAMX16UP60B 0.70 0.45 25.3 035-Z2L03 11.4 REF. Ø3.4 TYP. note 3 5 REF. 5.5 46.2 C R0.6 TYP. 10° R 2 TYP. 50 EF. 3.2 MIN. CONVEX ONLY 0.10 C Notes: Dimensions in mm 1- Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Convex only 0.15mm typical 5- Tollerances ±0.5mm, unless otherwise stated For mounting instruction see AN-1049 Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 07/05 www.irf.com 17