PD-96955 Rev. A Integrated Power Hybrid IC for Appliance Motor Drive Applications. Description IRAMY20UP60B Series 20A, 600V with Internal Shunt Resistor International Rectifier's IRAMY20UP60B is a 20A, 600V Integrated Power Hybrid IC with Internal Shunt Resistor for Appliance Motor Drives applications such as air conditioning systems and compressor drivers as well as for light industrial application. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low VCE(on) Non Punch-Through IGBT technology and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhaced package. A built-in temperature monitor and over-current and over-temperature protections, along with the shortcircuit rated IGBTs and integrated under-voltage lockout function, deliver high level of protection and failsafe operation. Using a new developed single in line package (SiP3) with heatspreader for the power die along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink. Features • Integrated Gate Drivers • Temperature Monitor and Protection • Overcurrent shutdown • Fully Isolated Package • Low VCE (on) Non Punch Through IGBT Technology. • Undervoltage lockout for all channels • Matched propagation delay for all channels • 5V Schmitt-triggered input logic • Cross-conduction prevention logic • Lower di/dt gate driver for better noise immunity • Motor Power range 0.75~2.2kW / 85~253 Vac • Isolation 2000VRMS min Absolute Maximum Ratings Parameter Description VCES / VRRM IGBT/Diode Blocking Voltage Value 600 Units V+ Positive Bus Input Voltage 450 IO @ TC=25°C RMS Phase Current (Note 1) 20 IO @ TC=100°C RMS Phase Current (Note 1) 10 IO Pulsed RMS Phase Current (Note 2) 40 FPWM PWM Carrier Frequency 20 PD Power dissipation per IGBT @ TC =25°C 68 W VISO Isolation Voltage (1min) 2000 VRMS TJ (IGBT & Diodes) Operating Junction temperature Range -40 to +150 TJ (Driver IC) Operating Junction temperature Range -40 to +150 T Mounting torque Range (M4 screw) 0.7 to 1.17 V A kHz °C Nm Note 1: Sinusoidal Modulation at V+=400V, TJ=150°C, FPWM=20kHz, Modulation Depth=0.8, PF=0.6, See Figure 3. Note 2: tP<100ms; TC=25°C; FPWM=20kHz. Limited by IBUS-ITRIP, see Table "Inverter Section Electrical Characteristics" www.irf.com 1 IRAMY20UP60B Internal Electrical Schematic - IRAMY20UP60B V+ (10) V - (12) VB1 (1) U, VS1 (2) VB2 (4) V, VS2 (5) VB3 (7) W, VS3 (8) 22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3 23 VS1 LO1 16 24 HO1 25 VB1 1 VCC HIN1 (13) HIN2 (14) HIN3 (15) 2 HIN1 LIN1 (16) 5 LIN1 Driver IC LO2 15 LO3 14 3 HIN2 4 HIN3 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LIN2 (17) LIN3 (18) F/TMon (19) ITRIP (20) THERMISTOR POSISTOR VCC (21) VSS (22) 2 www.irf.com IRAMY20UP60B Absolute Maximum Ratings (Continued) Symbol Parameter IBDF Units Conditions Min Max Bootstrap Diode Peak Forward Current --- 4.5 A tP= 10ms, TJ = 150°C, TC=100°C PBR Peak Bootstrap Resistor Peak Power (Single Pulse) --- 25.0 W tP=100µs, TC =100°C ESR / ERJ series VS1,2,3 High side floating supply offset voltage VB1,2,3 - 25 VB1,2,3 +0.3 V VB1,2,3 High side floating supply voltage -0.3 600 V VCC Low Side and logic fixed supply voltage -0.3 20 V VIN Input voltage LIN, HIN, ITrip -0.3 Lower of (VSS+15V) or VCC+0.3V V Inverter Section Electrical Characteristics @TJ= 25°C Units Conditions Symbol Parameter Min Typ Max V(BR)CES Collector-to-Emitter Breakdown Voltage 600 --- --- V VIN=5V, IC=250µA ∆V(BR)CES / ∆T Temperature Coeff. Of Breakdown Voltage --- 0.3 --- V/°C VIN=5V, IC=1.0mA (25°C - 150°C) VCE(ON) Collector-to-Emitter Saturation Voltage --- 1.75 2.15 --- 2.00 2.50 ICES Zero Gate Voltage Collector Current --- 5 80 --- 80 --- VFM Diode Forward Voltage Drop --- 1.9 2.6 --- 1.6 2.3 -- -- 1.25 V µA V IC=10A, VCC=15V IC=10A, VCC=15V, TJ=125°C VIN=5V, V+=600V VIN=5V, V+=600V, TJ=125°C IC=10A IC=10A, TJ=125°C IF=1A VBDFM Bootstrap Diode Forward Voltage Drop --- --- 1.10 RBR Bootstrap Resistor Value --- 22 --- Ω TJ=25°C ∆RBR/RBR Bootstrap Resistor Tolerance --- --- ±5 % TJ=25°C IBUS_TRIP Current Protection Threshold (positive going) 26 --- 34 A tON > 175µs www.irf.com V IF=1A, TJ=125°C 3 IRAMY20UP60B Inverter Section Switching Characteristics @ TJ= 25°C Symbol Parameter Min Typ Max EON Turn-On Switching Loss --- 320 460 EOFF Turn-Off Switching Loss --- 175 225 ETOT Total Switching Loss --- 495 685 EREC Diode Reverse Recovery energy 35 70 tRR Diode Reverse Recovery time --- 95 --- EON Turn-On Switching Loss --- 520 680 EOFF Turn-off Switching Loss --- 305 385 ETOT Total Switching Loss --- 825 1065 EREC Diode Reverse Recovery energy --- 50 100 tRR Diode Reverse Recovery time --- 125 --- QG Turn-On IGBT Gate Charge RBSOA Reverse Bias Safe Operating Area --- 56 84 Units Conditions µJ IC=10A, V+=400V VCC=15V, L=2mH Energy losses include "tail" and diode reverse recovery See CT1 ns µJ IC=10A, V+=400V VCC=15V, L=2mH, TJ=125°C Energy losses include "tail" and diode reverse recovery See CT1 ns nC + IC=15A, V =400V, VGE=15V TJ=150°C, IC=10A, VP=600V V+= 450V VCC=+15V to 0V FULL SQUARE See CT3 TJ=150°C, VP=600V, SCSOA Short Circuit Safe Operating Area 10 --- --- µs V+= 360V, VCC=+15V to 0V See CT2 TJ=150°C, VP=600V, tSC<10µs ICSC Short Circuit Collector Current --- 140 --- A V+= 360V, VGE=15V VCC=+15V to 0V See CT2 Recommended Operating Conditions Driver Function The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommende conditions. All voltages are absolute referenced to COM/ITRIP. The VS offset is tested with all supplies biased at 15V differential (Note 3) Symbol Definition Min Max VB1,2,3 High side floating supply voltage VS+12 VS+20 VS1,2,3 High side floating supply offset voltage Note 4 450 VCC Low side and logic fixed supply voltage 12 20 VITRIP ITRIP input voltage VSS VSS+5 VIN Logic input voltage LIN, HIN VSS VSS+5 Units V V V Note 3: For more details, see IR21363 data sheet Note 4: Logic operational for Vs from COM/ITRIP-5V to COM/ITRIP+600V. Logic state held for Vs from COM/ITRIP-5V to COM/ITRIP-VBS. 4 www.irf.com IRAMY20UP60B Static Electrical Characteristics Driver Function VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to COM/ITRIP and are applicable to all six channels. (Note 3) Symbol Definition Min Typ Max Units VIH Logic "0" input voltage 3.0 --- --- V VIL Logic "1" input voltage --- --- 0.8 V VCCUV+, VBSUV+ VCC and VBS supply undervoltage positive going threshold 10.6 11.1 11.6 V VCCUV-, VBSUV- VCC and VBS supply undervoltage negative going threshold 10.4 10.9 11.4 V VCCUVH, VBSUVH VCC and VBS supply undervoltage lock-out hysteresis --- 0.2 --- V VIN,Clamp Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10µA 4.9 5.2 5.5 V IQBS Quiescent VBS supply current VIN=0V --- --- 165 µA --- 3.35 mA IQCC Quiescent VCC supply current VIN=0V --- ILK Offset Supply Leakage Current --- --- 60 µA IIN+ Input bias current VIN=5V --- 200 300 µA IIN- Input bias current VIN=0V --- 100 220 µA ITRIP+ ITRIP bias current VITRIP=5V --- 30 100 µA ITRIP- ITRIP bias current VITRIP=0V --- 0 1 µA V(ITRIP) ITRIP threshold Voltage 440 490 540 mV V(ITRIP,HYS) ITRIP Input Hysteresis --- 70 --- mV Dynamic Electrical Characteristics Driver only timing unless otherwise specified.) Symbol Parameter Min Typ Max TON Input to Output propagation turnon delay time (see fig.11) --- 590 --- TOFF Input to Output propagation turnoff delay time (see fig. 11) --- 700 --- µs TFLIN Input Filter time (HIN, LIN) 100 200 --- ns VIN=0 & VIN=5V TBLT-Trip ITRIP Blancking Time 100 150 ns VIN=0 & VIN=5V DT Dead Time (VBS=VDD=15V) 220 290 360 ns VBS=VCC=15V MT Matching Propagation Delay Time (On & Off) --- 40 75 ns VCC= VBS= 15V, external dead time> 400ns TITrip ITrip to six switch to turn-off propagation delay (see fig. 2) --- --- 1.75 µs VCC=VBS= 15V, IC=10A, V+=400V TFLT-CLR Post ITrip to six switch to turn-off clear time (see fig. 2) --- 7.7 --- --- 6.7 --- www.irf.com Units Conditions µs VCC=VBS= 15V, IC=10A, V+=400V ms TC = 25°C TC = 100°C 5 IRAMY20UP60B Thermal and Mechanical Characteristics Symbol Parameter Min Typ Max Rth(J-C) Thermal resistance, per IGBT --- 1.6 1.8 Rth(J-C) Thermal resistance, per Diode --- 2.2 3 Rth(C-S) Thermal resistance, C-S --- 0.1 --- CD Creepage Distance 3.5 --- --- Units Conditions Flat, greased surface. Heatsink °C/W compound thermal conductivity 1W/mK mm See outline Drawings Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter Min Typ Max Units Conditions RShunt Resistance 16.8 17.0 17.2 mΩ TCoeff Temperature Coefficient 0 --- 200 ppm/°C PShunt Power Dissipation --- --- 4.5 W TRange Temperature Range -40 --- 125 °C TC = 25°C -40°C< TC <100°C Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter Min Typ Max RShunt Resistance 16.8 17.0 17.2 Units Conditions mΩ TCoeff Temperature Coefficient 0 --- 200 ppm/°C PShunt Power Dissipation --- --- 4.5 W TRange Temperature Range -40 --- 125 °C TC = 25°C -40°C< TC <100°C Input-Output Logic Level Table V+ Ho Hin1,2,3 (13,14,15) U,V,W IC Driver (2,5,8) Lin1,2,3 (16,17,18) 6 Lo ITRIP HIN1,2,3 LIN1,2,3 U,V,W 0 0 0 1 0 1 1 X 1 0 1 X V 0 X X + www.irf.com IRAMY20UP60B HIN1,2,3 LIN1,2,3 ITRIP U,V,W Figure1. Input/Output Timing Diagram HIN1,2,3 LIN1,2,3 50% 50% ITRIP U,V,W 50% 50% TITRIP TFLT-CLR Figure 2. ITrip Timing Waveform Note 5: The shaded area indicates that both high-side and low side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load. www.irf.com 7 IRAMY20UP60B Module Pin-Out Description Pin Name 1 VB1 2 U, VS1 Description High Side Floating Supply Voltage 1 Output 1 - High Side Floating Supply Offset Voltage 3 NA none 4 VB2 High Side Floating Supply voltage 2 5 V,VS2 6 NA none 7 VB3 High Side Floating Supply voltage 3 8 W,VS3 9 NA + Output 2 - High Side Floating Supply Offset Voltage Output 3 - High Side Floating Supply Offset Voltage none Positive Bus Input Voltage 10 V 11 NA none 12 V- Negative Bus Input Voltage 13 HIN1 Logic Input High Side Gate Driver - Phase 1 14 HIN2 Logic Input High Side Gate Driver - Phase 2 15 HIN3 Logic Input High Side Gate Driver - Phase 3 16 LIN1 Logic Input Low Side Gate Driver - Phase 1 17 LIN2 Logic Input Low Side Gate Driver - Phase 2 18 LIN3 Logic Input Low Side Gate Driver - Phase 3 19 Fault/TMON 20 ITRIP Current Monitor 21 VCC +15V Main Supply 22 VSS Negative Main Supply Temperature Monitor and Fault Function 1 22 8 www.irf.com IRAMY20UP60B Typical Application Connection IRAMY20UP60B BOOT-STRAP CAPACITORS 15µF V B1 2.2µF U VB2 V VB3 V+ W V+ DC BUS CAPACITORS VHIN1 +5V HIN2 HIN3 LIN1 LIN2 LIN3 FLT-VTH Date Code Lot # IRAMY20UP60B 3-Phase AC MOTOR 1 22ohm ITRIP CONTROLLER 12kohm VSS +5V 22 Fault & Temp Monitor V cc (15 V) IMonitor +15V 0.1m 10m 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1µF, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. Current sense signal can be obtained from pin 20 and pin 23. 5. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 6. PWM generator must be disabled within Fault duration to garantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 7. Fault/Temp Monitor pin must be pulled-up to +5V. www.irf.com 9 Maximum Output Phase RMS Current - A IRAMY20UP60B 16 14 12 10 8 TC = 100°C 6 TC = 110°C 4 TC = 120°C TJ = 150°C 2 0 Sinusoidal Modulation 0 2 4 6 8 10 12 14 16 18 20 PWM Frequency - kHz Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Maximum Output Phase RMS Current - A V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6 16 TJ = 150°C 14 Sinusoidal Modulation 12 10 8 FPWM = 20kHz 6 FPWM = 16kHz 4 FPWM = 12kHz 2 0 1 10 100 Modulation Frequency - Hz Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency V+=400V, TJ=150°C, TC=100°C, Modulation Depth=0.8, PF=0.6 10 www.irf.com IRAMY20UP60B Total Power Losses - W 170 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 IOUT = 8 ARMS IOUT = 10 ARMS IOUT = 12 ARMS TJ = 150°C Sinusoidal Modulation 0 2 4 6 8 10 12 14 16 18 20 PWM Switching Frequency - kHz Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation V+=400V , TJ=150°C, Modulation Depth=0.8, PF=0.6 350 325 Total Power Losses - W 300 TJ = 150°C 275 Sinusoidal Modulation 250 225 200 175 150 125 FPWM = 12 kHz 100 FPWM = 16 kHz 75 FPWM = 20 kHz 50 25 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Output Phase Current - ARMS Figure 6. Total Power Losses vs. Output Phase Current, Sinusoidal modulation VBUS=400V , TJ=150°C, www.irf.com Modulation Depth=0.8, PF=0.6 11 Maximum Allowable Case Temperature -°C IRAMY20UP60B 160 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 FPWM = 12 kHz FPWM = 16 kHz FPWM = 20 kHz TJ = 150°C Sinusoidal Modulation 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 Output Phase Current - ARMS Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase IGBT Junction Temperature - °C 160 TJ avg. = 1.4701 x TTherm+ 12.431 150 140 130 120 110 100 65 70 75 80 85 90 95 100 Internal Thermistor Temperature Equivalent Read Out - °C Figure 8. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature 12 www.irf.com IRAMY20UP60B Thermistor Pin Read-Out Voltage - V 5.0 +5V 4.5 4.0 TTHERM RTHERM TTHERM °C Ω °C -40 4397119 25 3.5 RTHERM Ω 100000 TTHERM °C 90 RTHERM Ω 7481 -35 3088599 30 79222 95 6337 -30 2197225 35 63167 100 5384 -25 1581881 40 50677 105 4594 2.5 -20 1151037 45 40904 110 3934 -15 846579 50 33195 115 3380 2.0 -10 628988 55 27091 120 2916 -5 471632 60 22224 125 2522 0 357012 65 18322 130 2190 5 272500 70 15184 135 1907 10 209710 75 12635 140 1665 15 162651 80 10566 145 1459 20 127080 85 8873 150 1282 3.0 1.5 1.0 0.5 -40 -30 -20 -10 0 10 20 30 REXT VTherm R Therm Min Avg. Max 40 50 60 70 80 90 100 110 120 130 Thermistor Temperature - °C Recommended Bootstrap Capacitor - µF Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) and Nominal Thermistor Resistance values vs. Temperature Table. 16.0 15µF 15.0 14.0 RBS 13.0 DBS vB 12.0 +15V 11.0 10µF 10.0 VCC HIN HIN LIN LIN VSS COM 9.0 V+ CBS RG1 HO VS U,V,W RG2 LO VSS 8.0 GND 6.8µF 7.0 6.0 4.7µF 5.0 4.0 3.3µF 3.0 2.0 0 5 10 15 20 PWM Frequency - kHz Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency www.irf.com 13 IRAMY20UP60B Figure 11. Switching Parameter Definitions VCE IC IC VCE 90% IC 50% HIN /LIN 90% IC 50% VCE HIN /LIN HIN /LIN 50% HIN /LIN 50% VCE 10% IC 10% IC tr tf TON TOFF Figure 11a. Input to Output Propagation turn-on Delay Time Figure 11b. Input to Output Propagation turn-off Delay Time IF VCE HIN/LIN Irr trr Figure 11c. Diode Reverse Recovery 14 www.irf.com IRAMY20UP60B V+ 5V Ho IN Hin1,2,3 IC Driver U,V,W IO Lo Lin1,2,3 Figure CT1. Switching Loss Circuit V+ Ho Hin1,2,3 1k VCC 10k Lin1,2,3 IN IC Driver 5VZD U,V,W IO Lo IN Io Figure CT2. S.C.SOA Circuit V+ Ho Hin1,2,3 1k VCC IC Driver 5VZD IN 10k Lin1,2,3 IN U,V,W IO Lo Io Figure CT3. R.B.SOA Circuit www.irf.com 15 IRAMY20UP60B Package Outline 78 A 70 B 16.5 16.5 REF. 31.6 31.1 Ø4.6 TYP. 4 22 C 6.8 2.6 TYP. 21x2.54 = 53.43 1.9 INT. 0.70 TYP. 0.45 Ø0.20 M A B TYP. 2.8 INT. SCALE:4/1 0.90 0.65 56.9 16.5 REF 1 2 TYP. 6 R0.6 TYP. 58 DO NOT SCALE DRAWING. 4.5 3.5 CONVEX ONLY 0.15 C REMOVE ALL BURRS AND SHARP EDGES Standard Pin leadforming option Notes: For mounting instruction see AN-1049 1- Marking for pin 1 identification Dimensions in mm 2- Product Part Number 3- Lot and Date code marking 4- Convex only 0.15mm typical. Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 03/05 16 www.irf.com