IRF IR1210

The IR1210 part number has Data Sheet No. PD60165-C
been updated and changed to
IR4426/IR4427/IR4428
Please see new data sheet
IR1210
DUAL LOW SIDE DRIVER
Features
• Gate drive supply range from 6 to 20V
• CMOS Schmitt-triggered inputs with pull-up
• Matched propagation delay for both channels
• Outputs out of phase with inputs
Description
The IR1210 is a low voltage, high speed power
MOSFET and IGBT driver. Proprietary latch immune
CMOS technologies enable ruggedized monolithic
construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers
feature a high pulse current buffer stage designed
for minimum driver cross-conduction. Propagation
delays between two channels are matched.
Product Summary
IO+/-
1.5A / 1.5A
VOUT
6V - 20V
ton/off (typ.)
85 & 65 ns
Package
8 Lead SOIC
Block Diagram
1
INA
2
3
INB
4
NC
NC
INA
OUTA
IR1210
GND
INB
Vs
OUTB
8
7
TO
LOAD
6
5
ADVANCED INFORMATION
IR1210
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to GND. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Symbol
Definition
Min.
Max.
-0.3
25
Units
VS
Fixed supply voltage
VO
Output voltage
VIN
Logic input voltage (INA/N & INB/N)
-0.3
VS + 0.3
PD
Package power dissipation @ TA ≤ +25°C
—
0.625
W
°C/W
RthJA
-0.3
V
VS + 0.3
Thermal resistance, junction to ambient
—
200
TJ
Junction temperature
—
150
TS
Storage temperature
-55
150
TL
Lead temperature (soldering, 10 seconds)
—
300
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. All voltage parameters are absolute voltages referenced to GND.
Symbol
Min.
Max.
VS
Definition
Fixed supply oltage
6
20
VO
Output voltage
0
VS
VIN
Logic input voltage (INA/N & INB/N)
TA
Ambient temperature
0
VS
-40
125
Units
V
°C
DC Electrical Characteristics
VBIAS (VS) = 15V, TA = 25°C unless otherwise specified. The VIN, and IIN parameters are referenced to GND and are
applicable to input leads: INA/N and INB/N. The VO and IO parameters are referenced to GND and are applicable to the
output leads: OUTA and OUTB.
Symbol
Definition
VIH
Logic “0” input voltage (OUT=LO)
VIL
Min. Typ. Max. Units Test Conditions
2.7
—
—
Logic “1” input voltage (OUT=HI)
—
—
0.8
VOH
High level output voltage, VBIAS -VO
—
—
1.2
VOL
Low level output voltage, VO
—
—
0.1
V
IIN+
Logic “1” input bias current (OUT=HI)
—
5
15
IIN-
Logic “0” input bias current (OUT=LO)
—
-10
-30
VIN = 0V
IQS
Quiescent Vs supply current
—
100
200
VIN = 0V or VS
IO+
Output high short circuit pulsed current
1.5
2.3
—
VO = 0V, VIN = 0
PW ≤ 10 µs
IO-
Output low short circuit pulsed current
1.5
3.3
—
µA
A
VIN = VS
VO = 15V, VIN = VS
PW ≤ 10 µs
2
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ADVANCED INFORMATION
IR1210
Dynamic Electrical Characteristics
VBIAS (VS) = 15V, CL = 1000 pF, TA = 25°C unless otherwise specified.
Symbol
td1
td2
tr
tf
Definition
Min. Typ. Max. Units Test Conditions
Turn-on propagation delay
—
85
160
Turn-off propagation delay
—
65
150
Turn-on rise time
—
15
35
Turn-off fall time
—
10
25
figures 2 & 3
ns
Functional Block Diagram
5V
Vs
INA
PREDRV
OUTA
DRV
5V
Vs
INB
PREDRV
OUTB
DRV
GND
Lead Assignment and Definitions
Symbol Description
VS
Supply voltage
GND
Ground
INA
Logic input for gate driver output (OUTA), out of phase
INB
Logic input for gate driver output (OUTB), out of phase
GND
OUTA
Gate drive output A
INB
OUTB
Gate drive output B
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INA
OUTA
VS
OUTB
3
IR1210
ADVANCED INFORMATION
8 Lead SOIC
4
01-0021 08
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ADVANCED INFORMATION
50%
INA
INA
IR1210
50%
INB
INB
t d1
OUTA
OUTA
OUTB
OUTB
t d2
tr
90%
10%
Figure 1. Timing Diagram
tf
90%
10%
Figure 2. Switching Time Waveforms
V S = 15V
6
4.7UF
0.1UF
7
2
INA
OUTA
C L = 1000PF
4
INB
5
OUTB
C L = 1000PF
3
Figure 3. Switching Time Test Circuit
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
Data and specifications subject to change without notice.
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12/20/2000
5