IRF IRG4BC10S

PD - 91786A
IRG4BC10S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Extremely low voltage drop; 1.1V typical at 2A
• S-Speed: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives, up to 2KHz in
Chopper Applications
• Very Tight Vce(on) distribution
• Industry standard TO-220AB package
VCES = 600V
VCE(on) typ. = 1.10V
G
@VGE = 15V, IC = 2.0A
E
n-channel
Benefits
• Generation 4 IGBTs offer highest efficiency
available
• IGBTs optimized for specified application conditions
• Lower conduction losses than many Power
MOSFET''s
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PDTC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
14
8.0
18
18
± 20
110
38
15
-55 to +150
V
A
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.5
–––
2.0(0.07)
3.3
–––
50
–––
Units
°C/W
g (oz)
1
4/24/2000
IRG4BC10S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18
—
—
V
VGE = 0V, IC = 1.0A
Temperature Coeff. of Breakdown Voltage — 0.64 —
V/°C VGE = 0V, IC = 1.0mA
VGE = 15V
— 1.58 1.7
IC = 8.0A
Collector-to-Emitter Saturation Voltage
— 2.05 —
IC = 14A
See Fig.2, 5
V
— 1.68 —
IC = 8.0A , TJ = 150°C
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
—
-9.5 — mV/°C VCE = VGE, IC = 250µA
Forward Transconductance U
3.7
5.5
—
S
VCE = 100V, IC = 8.0A
—
—
250
VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current
µA
—
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
15
22
IC = 8.0A
2.4 3.6
nC
VCC = 400V
See Fig. 8
6.5 9.8
VGE = 15V
25
—
28
—
TJ = 25°C
ns
630 950
IC = 8.0A, VCC = 480V
710 1100
VGE = 15V, RG = 100Ω
0.14 —
Energy losses include "tail"
2.58 —
mJ See Fig. 9, 10, 14
2.72 4.3
24
—
TJ = 150°C,
31
—
IC = 8.0A, VCC = 480V
ns
810
—
VGE = 15V, RG = 100Ω
1300 —
Energy losses include "tail"
3.94 —
mJ See Fig. 11, 14
7.5
—
nH
Measured 5mm from package
280
—
VGE = 0V
30
—
pF
VCC = 30V
See Fig. 7
4.0
—
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω,
(See fig. 13a)
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4BC10S
20
For both:
16
L oa d C u rre n t (A )
Triangular wave:
Duty cycle: 50%
T J = 125°C
T sink= 90°C
Gate drive as specified
Power Dissipation = 9.2 W
Clamp voltage:
80% of rated
12
Square wave:
60% of rated
voltage
8
4
Ideal diodes
A
0
0.1
1
10
100
f, F re qu e ncy (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 °C
TJ = 150 °C
10
V
= 15V
20µs PULSE WIDTH
GE
1
0.8
1.2
1.6
2.0
2.4
2.8
3.2
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
I C , Collector Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
V
= 50V
5µs PULSE WIDTH
CC
5µs PULSE WIDTH
1
6
8
10
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC10S
3.00
16
V
= 15V
80 us PULSE WIDTH
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
GE
I C = 16 A
2.50
12
2.00
8
IC = 8 A
1.50
4
0
25
50
75
100
125
150
IC = 4 A
1.00
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
TC , Case Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10S
C, Capacitance (pF)
400
Cies
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
300
C
oes
200
Cres
100
20
VGE , Gate-to-Emitter Voltage (V)
500
0
1
10
10
5
0
100
0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
2.7
2.6
40
60
80
RR
Gate Resistance
Resistance(Ohm)
(Ω)
GG ,, Gate
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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10
15
20
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 480V
V GE = 15V
TJ = 25 °C
I C = 8.0A
20
5
Q G , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
VCC = 400V
I C = 8A
15
VCE , Collector-to-Emitter Voltage (V)
2.8
100
RG = Ohm
100Ω
VGE = 15V
VCC = 480V
IC = 16 A
10
IC = 8 A
IC = 4 A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC10S
100
RG
TJ
VCC
10
VGE
100 Ω
= Ohm
= 150 ° C
= 480V
= 15V
I C , Collector Current (A)
Total Switching Losses (mJ)
12
8
6
4
VGE = 20V
T J = 125 oC
10
2
SAFE OPERATING AREA
1
0
0
4
8
12
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector Current
6
16
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC10S
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
480V
4 X [email protected]°C
480µF
960V
Q
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 480V
R
S
Q
R
90 %
10 %
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
1 0%
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
Eon
E o ff
E ts = (E o n +E o ff )
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7
IRG4BC10S
Case Outline and Dimensions — TO-220AB
2.8 7 (.1 1 3 )
2.6 2 (.1 0 3 )
1 0 .5 4 (.4 1 5 )
1 0 .2 9 (.4 0 5 )
4
3.78 (.149)
3.54 (.139)
-A -
1.32 (.05 2)
1.22 (.04 8)
6 .4 7 (.255)
6 .1 0 (.240)
1 5 .2 4 (.6 0 0 )
1 4 .8 4 (.5 8 4 )
1.15 (.0 45)
M IN
1
2
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 )
N O TE S :
1 D IM E N S IO N S & T O L E R A N C IN G
P E R A N S I Y 1 4 .5 M , 1 9 8 2.
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M IL L IM E T E R S (IN C H E S ).
4 C O N F O R M S T O J E D E C O U T L IN E
T O -2 20 A B .
LEAD
1234-
3
3X
1 .4 0 (.0 5 5 )
3 X 1 .1 5 (.0 4 5 )
-B -
4.69 (.185)
4.20 (.165)
3.96 (.1 60)
3.55 (.1 40)
A S S IG N M E N T S
G A TE
C O L LE C T O R
E M IT T E R
C O L LE C T O R
4.06 (.160)
3.55 (.140)
3X
0.93 (.037)
0.69 (.027)
0 .3 6 (.0 1 4 )
M B A M
2 .5 4 (.1 0 0 )
3X
0.55 (.0 22)
0.46 (.0 18)
2.92 (.115 )
2.64 (.104 )
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e n s io n s in M illim e te rs a n d (In c h e s )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
8
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