PD - 91786A IRG4BC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in Chopper Applications • Very Tight Vce(on) distribution • Industry standard TO-220AB package VCES = 600V VCE(on) typ. = 1.10V G @VGE = 15V, IC = 2.0A E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Lower conduction losses than many Power MOSFET''s TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PDTC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 14 8.0 18 18 ± 20 110 38 15 -55 to +150 V A mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.5 ––– 2.0(0.07) 3.3 ––– 50 ––– Units °C/W g (oz) 1 4/24/2000 IRG4BC10S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 0.64 — V/°C VGE = 0V, IC = 1.0mA VGE = 15V — 1.58 1.7 IC = 8.0A Collector-to-Emitter Saturation Voltage — 2.05 — IC = 14A See Fig.2, 5 V — 1.68 — IC = 8.0A , TJ = 150°C Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -9.5 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance U 3.7 5.5 — S VCE = 100V, IC = 8.0A — — 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current µA — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 15 22 IC = 8.0A 2.4 3.6 nC VCC = 400V See Fig. 8 6.5 9.8 VGE = 15V 25 — 28 — TJ = 25°C ns 630 950 IC = 8.0A, VCC = 480V 710 1100 VGE = 15V, RG = 100Ω 0.14 — Energy losses include "tail" 2.58 — mJ See Fig. 9, 10, 14 2.72 4.3 24 — TJ = 150°C, 31 — IC = 8.0A, VCC = 480V ns 810 — VGE = 15V, RG = 100Ω 1300 — Energy losses include "tail" 3.94 — mJ See Fig. 11, 14 7.5 — nH Measured 5mm from package 280 — VGE = 0V 30 — pF VCC = 30V See Fig. 7 4.0 — ƒ = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω, (See fig. 13a) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC10S 20 For both: 16 L oa d C u rre n t (A ) Triangular wave: Duty cycle: 50% T J = 125°C T sink= 90°C Gate drive as specified Power Dissipation = 9.2 W Clamp voltage: 80% of rated 12 Square wave: 60% of rated voltage 8 4 Ideal diodes A 0 0.1 1 10 100 f, F re qu e ncy (kH z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 °C TJ = 150 °C 10 V = 15V 20µs PULSE WIDTH GE 1 0.8 1.2 1.6 2.0 2.4 2.8 3.2 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 100 TJ = 150 °C 10 TJ = 25 °C V = 50V 5µs PULSE WIDTH CC 5µs PULSE WIDTH 1 6 8 10 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC10S 3.00 16 V = 15V 80 us PULSE WIDTH VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) GE I C = 16 A 2.50 12 2.00 8 IC = 8 A 1.50 4 0 25 50 75 100 125 150 IC = 4 A 1.00 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) TC , Case Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC10S C, Capacitance (pF) 400 Cies VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 300 C oes 200 Cres 100 20 VGE , Gate-to-Emitter Voltage (V) 500 0 1 10 10 5 0 100 0 Total Switching Losses (mJ) Total Switching Losses (mJ) 100 2.7 2.6 40 60 80 RR Gate Resistance Resistance(Ohm) (Ω) GG ,, Gate Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 10 15 20 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 °C I C = 8.0A 20 5 Q G , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0 VCC = 400V I C = 8A 15 VCE , Collector-to-Emitter Voltage (V) 2.8 100 RG = Ohm 100Ω VGE = 15V VCC = 480V IC = 16 A 10 IC = 8 A IC = 4 A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (° C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC10S 100 RG TJ VCC 10 VGE 100 Ω = Ohm = 150 ° C = 480V = 15V I C , Collector Current (A) Total Switching Losses (mJ) 12 8 6 4 VGE = 20V T J = 125 oC 10 2 SAFE OPERATING AREA 1 0 0 4 8 12 I C , Collector Current (A) Fig. 11 - Typical Switching Losses vs. Collector Current 6 16 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC10S L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 90 % 10 % S VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5µ s Eon E o ff E ts = (E o n +E o ff ) www.irf.com 7 IRG4BC10S Case Outline and Dimensions TO-220AB 2.8 7 (.1 1 3 ) 2.6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 4 3.78 (.149) 3.54 (.139) -A - 1.32 (.05 2) 1.22 (.04 8) 6 .4 7 (.255) 6 .1 0 (.240) 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1.15 (.0 45) M IN 1 2 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2. 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 20 A B . LEAD 1234- 3 3X 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) -B - 4.69 (.185) 4.20 (.165) 3.96 (.1 60) 3.55 (.1 40) A S S IG N M E N T S G A TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160) 3.55 (.140) 3X 0.93 (.037) 0.69 (.027) 0 .3 6 (.0 1 4 ) M B A M 2 .5 4 (.1 0 0 ) 3X 0.55 (.0 22) 0.46 (.0 18) 2.92 (.115 ) 2.64 (.104 ) 2X CONFORMS TO JEDEC OUTLINE TO-220AB D im e n s io n s in M illim e te rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com