APTC80TDU15PG Triple dual Common Source VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C Super Junction MOSFET Power Module D3 D1 G3 G1 G5 S3 S1 S5 S1/S2 S3/S4 S5/S6 S2 S4 S6 G2 G4 G6 D2 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies D5 D4 Features • D6 • • • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability • RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 28 21 110 ±30 150 277 17 0.5 670 Unit V A V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC80TDU15PG– Rev 2 October 2012 Symbol VDSS APTC80TDU15PG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 4507 2092 108 Max 50 375 150 3.9 ±150 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz pF 180 VGS = 10V VBus = 400V ID = 28A 22 nC 90 Inductive switching @125°C VGS = 15V VBus = 533V ID = 28A RG = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω 10 13 83 ns 35 486 µJ 278 850 µJ 342 Source - Drain diode ratings and characteristics trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25°C Tc = 80°C Typ 28 21 VGS = 0V, IS = - 28A IS = - 28A VR = 400V diS/dt = 200A/µs Max Unit A 1.2 6 V V/ns Tj = 25°C 550 ns Tj = 25°C 30 µC X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 28A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–7 APTC80TDU15PG– Rev 2 October 2012 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X APTC80TDU15PG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 Typ Max 0.45 150 125 100 5 250 Unit °C/W V °C N.m g SP6-P Package outline (dimensions in mm) www.microsemi.com 3–7 APTC80TDU15PG– Rev 2 October 2012 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTC80TDU15PG Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 Single Pulse 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 100 VGS=15&10V 6.5V 60 50 ID, Drain Current (A) 6V 40 5.5V 30 5V 20 4.5V 10 80 60 40 TJ=25°C 20 TJ=125°C 4V TJ=-55°C 0 0 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 30 Normalized to VGS=10V @ 14A 1.3 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle VGS=10V 1.2 VGS=20V 1.1 1 0.9 25 20 15 10 5 0 0.8 0 10 20 30 40 50 60 25 50 75 100 125 150 TC, Case Temperature (°C) ID, Drain Current (A) www.microsemi.com 4–7 APTC80TDU15PG– Rev 2 October 2012 ID, Drain Current (A) 70 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 VGS=10V ID= 14A 2.5 2.0 1.5 1.0 0.5 0.0 -50 TJ, Junction Temperature (°C) 100 150 1000 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 Maximum Safe Operating Area Threshold Voltage vs Temperature 1.2 1.0 0.9 0.8 100 0 50 100 0 1 1000 Coss 100 Crss 10 0 VGS, Gate to Source Voltage (V) Ciss 1ms Single pulse TJ=150°C TC=25°C 1 TC, Case Temperature (°C) 10000 100µs 100ms 150 Capacitance vs Drain to Source Voltage 100000 limited by RDSon 10 0.7 -50 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=28A TJ=25°C 14 VDS=160V 12 VDS=400V 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 8 VDS=640V 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC) 5–7 APTC80TDU15PG– Rev 2 October 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80TDU15PG APTC80TDU15PG Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 VDS=533V RG=2.5Ω TJ=125°C L=100µH 60 40 tr and tf (ns) 30 20 td(on) 20 VDS=533V RG=2.5Ω TJ=125°C L=100µH 10 0 0 10 20 30 40 ID, Drain Current (A) 50 10 1200 Switching Energy (µJ) Eon and Eoff (µJ) 2500 VDS=533V RG=2.5Ω TJ=125°C L=100µH Eon 900 600 20 30 40 ID, Drain Current (A) 50 Switching Energy vs Gate Resistance Switching Energy vs Current 1500 Eoff 300 VDS=533V ID=28A TJ=125°C L=100µH 2000 1500 Eon 1000 Eon Eoff 500 0 0 10 20 30 40 ID, Drain Current (A) 0 50 Operating Frequency vs Drain Current 350 ZVS 300 250 200 Hard switching 150 100 IDR, Reverse Drain Current (A) 400 Frequency (kHz) tr VDS=533V D=50% RG=2.5Ω TJ=125°C TC=75°C ZCS 50 0 6 5 10 15 20 Gate Resistance (Ohms) 25 Source to Drain Diode Forward Voltage 1000 100 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) TJ=150°C 10 TJ=25°C 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 6–7 APTC80TDU15PG– Rev 2 October 2012 td(on) and td(off) (ns) td(off) 80 APTC80TDU15PG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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