APTC90HM60T3G Full - Bridge Super Junction MOSFET Power Module Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies 13 14 Q1 VDSS = 900V RDSon = 60m max @ Tj = 25°C ID = 59A @ Tc = 25°C Q3 18 11 22 Features 7 19 10 23 Q2 8 Q4 26 4 27 3 30 29 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 13 32 2 3 4 7 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 900 59 44 150 ±20 60 462 8.8 2.9 1940 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTC90HM60T3G – Rev 3 October, 2012 Symbol VDSS APTC90HM60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Typ 2.5 1000 50 3 Tj = 25°C Tj = 125°C VGS = 10V, ID = 52A VGS = VDS, ID = 6mA VGS = ±20 V, VDS = 0V Max 200 Unit 60 3.5 200 m V nA Max Unit µA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min Typ 13.6 0.66 nF 540 VGS = 10V VBus = 400V ID = 52A nC 64 230 70 Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 52A RG = 3.8 20 ns 400 25 Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8 Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8 3 mJ 1.5 4.2 mJ 1.7 Source - Drain diode ratings and characteristics Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 52A IS = - 52A Tj = 25°C VR = 400V Tj = 25°C diS/dt = 200A/µs 0.8 Max 59 44 1.2 Unit A V 920 ns 60 µC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 Typ Max 0.27 150 125 100 3 110 Unit °C/W V °C N.m g 2–6 APTC90HM60T3G – Rev 3 October, 2012 Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt APTC90HM60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T SP3 Package outline (dimensions in mm) www.microsemi.com 3–6 APTC90HM60T3G – Rev 3 October, 2012 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTC90HM60T3G Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.15 0.5 0.1 0.3 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 160 5V 80 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 Maximum Safe Operating Area 10 ms ID, DC Drain Current (A) ID, Drain Current (A) 100 µs Single pulse TJ=150°C TC=25°C 950 925 900 25 75 100 125 50 40 30 20 10 1 0 1 10 100 1000 25 VDS, Drain to Source Voltage (V) Ciss 10000 Coss 1000 100 Crss 10 1 0 50 75 100 125 TC, Case Temperature (°C) 150 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 50 DC Drain Current vs Case Temperature 60 limited by RDSon 10 975 TJ, Junction Temperature (°C) 1000 100 1000 10 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com VDS=400V ID=52A TJ=25°C 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 4–6 APTC90HM60T3G – Rev 3 October, 2012 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 240 APTC90HM60T3G VDS=600V D=50% RG=3.8Ω TJ=125°C TC=75°C 300 200 Hard switching 100 ZCS 0 20 25 30 35 40 45 50 3.0 2.5 2.0 1.5 1.0 0.5 25 ID, Drain Current (A) 6 Eon 4 Eoff 2 0 10 20 30 40 50 60 ID, Drain Current (A) 100 125 150 7 Switching Energy (mJ) Eon and Eoff (mJ) VDS=600V RG=3.8Ω TJ=125°C L=100µH 75 Switching Energy vs Gate Resistance Switching Energy vs Current 8 50 TJ, Junction Temperature (°C) 70 80 6 Eon 5 Eoff 4 3 VDS=600V ID=52A TJ=125°C L=100µH 2 1 0 0 5 10 15 20 Gate Resistance (Ohms) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 5–6 APTC90HM60T3G – Rev 3 October, 2012 Frequency (kHz) ZVS ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) Operating Frequency vs Drain Current 400 APTC90HM60T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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