APTDF100H100G Diode Full Bridge Power Module VRRM = 1000V IC = 100A @ Tc = 70°C Application + AC1 AC2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features - Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Benefits Outstanding performance at high frequency operation Low losses Low noise switching Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 8.3ms Duty cycle = 50% Max ratings Unit 1000 V TC = 25°C 130 TC = 70°C TC = 45°C TC = 45°C 100 130 500 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTDF100H100G – Rev 2 October, 2012 Absolute maximum ratings APTDF100H100G Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Test Conditions IF = 100A IF = 150A Tj = 125°C IF = 100A Tj = 25°C VR = 1000V Tj = 125°C Min Typ 2.1 2.3 1.7 Max 2.7 V 100 500 VR = 1000V Unit 120 µA pF Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF=1A,VR=30V di/dt = 100A/µs IF = 100A VR = 667V di/dt = 200A/µs IF = 100A VR = 667V di/dt=1000A/µs Min Typ Tj = 25°C 45 Tj = 25°C 290 Tj = 125°C 340 Tj = 25°C Tj = 125°C 685 3645 Tj = 25°C 6 Tj = 125°C 18 Tj = 125°C Max Unit ns ns nC A 160 ns 7100 nC 70 A Thermal and package characteristics Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink www.microsemi.com M5 Typ Max 0.55 175 125 100 4.7 160 Unit °C/W V °C N.m g 2-5 APTDF100H100G – Rev 2 October, 2012 Symbol RthJC VISOL TJ TSTG TC Torque Wt APTDF100H100G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.3 0.2 0.1 0.05 0.1 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge trr, Reverse Recovery Time (ns) TJ=175°C 250 200 TJ=125°C 150 100 TJ=-55°C 50 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 400 TJ=125°C VR=667V 350 300 250 150 A 200 100 A 150 50 A 100 50 0 0 3.0 200 400 TJ=125°C VR=667V 8 150 A 7 100 A 6 5 50 A 4 3 2 0 200 400 600 800 -diF/dt (A/µs) 1000 1200 TJ=125°C VR=667V 70 100 A 150 A 60 50 A 50 40 30 20 10 0 200 400 600 800 1000 1200 Max. Average Forward Current vs. Case Temp. 150 700 Duty Cycle = 0.5 TJ=175°C 125 600 500 IF(AV) (A) C, Capacitance (pF) 80 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 800 800 1000 1200 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 9 600 -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 400 300 100 75 50 200 25 100 0 0 1 10 100 VR, Reverse Voltage (V) 1000 0 25 50 75 100 125 150 175 Case Temperature (ºC) www.microsemi.com 3-5 APTDF100H100G – Rev 2 October, 2012 IF, Forward Current (A) 300 APTDF100H100G www.microsemi.com 4-5 APTDF100H100G – Rev 2 October, 2012 SP4 Package outline (dimensions in mm) APTDF100H100G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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