APTDF200H170G Diode Full Bridge Power Module VRRM = 1700V IC = 200A @ Tc = 55°C Application + AC1 AC2 Uninterruptible Power Supply (UPS) Induction heating Welding equipment High speed rectifiers Features - Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IF(RMS) IFSM RMS Forward Current Non-Repetitive Forward Surge Current Duty cycle = 50% Max ratings Unit 1700 V Tc = 25°C 240 Tc = 55°C 200 250 600 Tj = 25°C A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APTDF200H170G – Rev 2 October, 2012 Absolute maximum ratings APTDF200H170G Electrical Characteristics Symbol Characteristic Test Conditions VF Diode Forward Voltage IF = 200A IRM Maximum Reverse Leakage Current VR = 1700V Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 2.2 2.1 Max 2.5 Unit V 350 600 µA Max Unit Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 200A VR = 900V di/dt = 2000A/µs Min Typ Tj = 25°C 572 Tj = 125°C 704 Tj = 25°C Tj = 125°C Tj = 25°C 40 70 140 Tj = 125°C 200 ns µC A Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Torque Mounting torque 4000 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.18 150 125 100 5 3.5 300 Unit °C/W V °C N.m g www.microsemi.com 2-4 APTDF200H170G – Rev 2 October, 2012 SP6 Package outline (dimensions in mm) APTDF200H170G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.16 0.7 0.12 0.5 0.08 0.3 0.04 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage TJ=25°C 400 300 TJ=125°C 200 100 TJ=25°C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 trr, Reverse Recovery Time (ns) 800 0 TJ=125°C VR=900V 700 600 500 400 A 400 200 A 300 100 A 200 0 3000 VF, Anode to Cathode Voltage (V) 400 A 200 A 120 100 100 A 80 60 40 0 3000 6000 9000 12000 IRRM, Reverse Recovery Current (A) TJ=125°C VR=900V 140 9000 12000 IRRM vs. Current Rate of Charge QRR vs. Current Rate Charge 160 6000 -diF/dt (A/µs) 800 TJ=125°C VR=900V 700 200 A 400 A 100 A 600 500 400 300 200 100 0 3000 -diF/dt (A/µs) 6000 9000 12000 -diF/dt (A/µs) Max. Average Forward Current vs. Case Temp. 300 Duty Cycle = 0.5 TJ=150°C 250 IF(AV) (A) QRR, Reverse Recovery Charge (µC) 10 Trr vs. Current Rate of Charge 500 IF, Forward Current (A) 1 200 150 100 50 0 0 25 50 75 100 125 150 Case Temperature (ºC) www.microsemi.com 3-4 APTDF200H170G – Rev 2 October, 2012 Thermal Impedance (°C/W) 0.2 APTDF200H170G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. 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