APTGT50TL601G-Rev1.pdf

APTGT50TL601G
Three level inverter
Trench + Field Stop IGBT3
Power Module
VCES = 600V
IC = 50A @ Tc = 80°C
Application
 Solar converter
 Uninterruptible Power Supplies
Features
 Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
 Very low stray inductance
 High level of integration
Benefits
 Stable temperature behavior
 Very rugged
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Easy paralleling due to positive TC of VCEsat
 Low profile
 RoHS Compliant
All multiple inputs and outputs must be shorted together
5/6 ; 9/10
Q1 to Q4 Absolute maximum ratings
ICM
VGE
PD
RBSOA
TC = 25°C
TC = 80°C
TC = 25°C
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TJ = 150°C
Max ratings
600
80
50
100
±20
176
100A @ 550V
Unit
V
A
October, 2012
IC
Parameter
Collector - Emitter Breakdown Voltage
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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1-8
APTGT50TL601G– Rev1
Symbol
VCES
APTGT50TL601G
All ratings @ Tj = 25°C unless otherwise specified
Q1 to Q4 Electrical Characteristics
Symbol Characteristic
ICES
Zero Gate Voltage Collector Current
VCE(sat)
Collector Emitter Saturation Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
VGE = 0V, VCE = 600V
Tj = 25°C
VGE =15V
IC = 50A
Tj = 150°C
VGE = VCE , IC = 600µA
VGE = 20V, VCE = 0V
Min
Typ
5.0
1.5
1.7
5.8
Max
Unit
250
1.9
µA
6.5
600
V
nA
Max
Unit
V
Q1 to Q4 Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
QG
Gate charge
Tf
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Isc
Short Circuit data
RthJC
VGE = 0V
VCE = 25V
f = 1MHz
VGE=±15V, IC=50A
VCE=300V
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 50A
RG = 8.2
Tj = 25°C
VGE = ±15V
Tj = 150°C
VBus = 300V
IC = 50A
Tj = 25°C
RG = 8.2
Tj = 150°C
VGE ≤15V ; VBus = 360V
tp ≤ 6µs ; Tj = 150°C
Junction to Case Thermal Resistance
Min
Typ
3150
200
95
pF
0.5
µC
110
45
200
ns
40
120
50
250
ns
60
0.3
0.43
1.35
1.75
mJ
mJ
250
A
0.85
°C/W
October, 2012
Td(on)
Tr
Td(off)
Test Conditions
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2-8
APTGT50TL601G– Rev1
Symbol Characteristic
APTGT50TL601G
CR1 to CR4 diode ratings and characteristics
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
Maximum Reverse Leakage Current
VR=600V
DC Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Err
Reverse Recovery Energy
RthJC
Test Conditions
IF = 30A
VGE = 0V
IF = 30A
VR = 300V
di/dt =1800A/µs
Min
600
Typ
Tj = 25°C
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
30
1.6
1.5
100
150
1.5
Tj = 150°C
Tj = 25°C
Tj = 150°C
3.1
0.34
0.75
Max
150
350
Junction to Case Thermal Resistance
Unit
V
µA
A
2
V
ns
µC
mJ
2.45
°C/W
Max
Unit
CR5 & CR6 diode ratings and characteristics
Symbol Characteristic
VRRM
IRM
IF
Min
Maximum Reverse Leakage Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Err
Reverse Recovery Energy
V
VR=600V
Tj = 25°C
Tj = 150°C
IF = 50A
VGE = 0V
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
50
1.6
1.5
100
Tj = 150°C
Tj = 25°C
150
2.6
Tj = 150°C
Tj = 25°C
Tj = 150°C
5.4
0.60
1.20
DC Forward current
Diode Forward Voltage
Typ
600
Maximum Peak Repetitive Reverse Voltage
VF
RthJC
Test Conditions
IF = 50A
VR = 300V
di/dt =1800A/µs
150
350
Junction to Case Thermal Resistance
µA
A
2
V
ns
µC
mJ
1.42
°C/W
Max
Unit
V
Thermal and package characteristics
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
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M4
Min
4000
-40
-40
-40
2
Typ
175
125
100
3
80
°C
N.m
g
October, 2012
Characteristic
3-8
APTGT50TL601G– Rev1
Symbol
VISOL
TJ
TSTG
TC
Torque
Wt
APTGT50TL601G
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Q1 to Q4 Typical performance curve
80
VCE=300V
D=50%
R G=8.2Ω
T J=150°C
60
T c =85°C
40
October, 2012
Hard
switching
20
0
0
20
40
60
80
IC (A)
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4-8
APTGT50TL601G– Rev1
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
APTGT50TL601G
Output Characteristics (VGE=15V)
Output Characteristics
100
100
TJ=25°C
TJ = 150°C
TJ=125°C
VGE=13V
TJ=150°C
60
60
VGE=15V
40
40
20
20
TJ=25°C
0
0
0.5
1
1.5
VCE (V)
VGE=9V
0
2
2.5
0
3
3.5
2.5
60
E (mJ)
IC (A)
1
1.5
2
VCE (V)
2.5
VCE = 300V
VGE = 15V
RG = 8.2Ω
TJ = 150°C
3
TJ=25°C
80
0.5
3
3.5
Energy losses vs Collector Current
Transfert Characteristics
100
VGE=19V
80
IC (A)
IC (A)
80
40
Eoff
2
1.5
1
TJ=150°C
20
0
0
5
6
7
Eon
0.5
TJ=25°C
8
9
10
11
0
12
20
40
Switching Energy Losses vs Gate Resistance
80
100
Reverse Bias Safe Operating Area
3
125
2.5
Eoff
100
IC (A)
2
E (mJ)
60
IC (A)
VGE (V)
1.5
50
VCE = 300V
VGE =15V
IC = 50A
TJ = 150°C
1
Eon
0.5
75
VGE=15V
TJ=150°C
RG=8.2Ω
25
0
0
5
15
25
35
45
55
Gate Resistance (ohms)
65
0
100
200
300 400
VCE (V)
500
600
700
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.8
0.6
0.9
0.7
0.2
October, 2012
0.5
0.4
0.3
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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5-8
APTGT50TL601G– Rev1
Thermal Impedance (°C/W)
1
APTGT50TL601G
CR1 to CR4 Typical performance curve
Forward Characteristic of diode
60
50
IF (A)
40
30
20
TJ=150°C
10
TJ=25°C
0
0
0.4
0.8
1.2
1.6
VF (V)
2
2.4
Switching Energy Losses vs Gate Resistance
Energy losses vs Collector Current
1
1
VCE = 300V
VGE =15V
IC = 30A
TJ = 150°C
0.75
E (mJ)
E (mJ)
0.75
0.5
0.5
0.25
0.25
0
0
0
10
20
30
40
50
60
Gate Resistance (ohms)
VCE = 300V
VGE = 15V
RG = 10Ω
TJ = 150°C
0
70
10
20
30
40
50
60
IF (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
2
0.9
0.7
1.5
0.5
1
0.3
0.5
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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October, 2012
2.5
6-8
APTGT50TL601G– Rev1
Thermal Impedance (°C/W)
3
APTGT50TL601G
CR5 & CR6 Typical performance curve
Forward Characteristic of diode
100
IF (A)
80
60
40
TJ=150°C
20
TJ=25°C
0
0
0.4
0.8
1.2
1.6
VF (V)
2
2.4
Switching Energy Losses vs Gate Resistance
Energy losses vs Collector Current
1.5
1.2
1
0.8
E (mJ)
E (mJ)
1
0.6
VCE = 300V
VGE =15V
IC = 50A
TJ = 150°C
0.4
0.2
VCE = 300V
VGE = 15V
RG = 8.2Ω
TJ = 150°C
0.5
0
0
5
15
25
35
45
55
0
65
20
40
60
80
100
IF (A)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1.2
1
0.9
0.7
0.8
0.5
0.6
0.3
0.4
0.2
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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October, 2012
1.4
7-8
APTGT50TL601G– Rev1
Thermal Impedance (°C/W)
1.6
APTGT50TL601G
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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8-8
APTGT50TL601G– Rev1
October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.