APTGT50TL601G Three level inverter Trench + Field Stop IGBT3 Power Module VCES = 600V IC = 50A @ Tc = 80°C Application Solar converter Uninterruptible Power Supplies Features Trench + Field Stop IGBT3 Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant All multiple inputs and outputs must be shorted together 5/6 ; 9/10 Q1 to Q4 Absolute maximum ratings ICM VGE PD RBSOA TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A October, 2012 IC Parameter Collector - Emitter Breakdown Voltage V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-8 APTGT50TL601G– Rev1 Symbol VCES APTGT50TL601G All ratings @ Tj = 25°C unless otherwise specified Q1 to Q4 Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Q1 to Q4 Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Tf Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data RthJC VGE = 0V VCE = 25V f = 1MHz VGE=±15V, IC=50A VCE=300V Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Tj = 25°C VGE = ±15V Tj = 150°C VBus = 300V IC = 50A Tj = 25°C RG = 8.2 Tj = 150°C VGE ≤15V ; VBus = 360V tp ≤ 6µs ; Tj = 150°C Junction to Case Thermal Resistance Min Typ 3150 200 95 pF 0.5 µC 110 45 200 ns 40 120 50 250 ns 60 0.3 0.43 1.35 1.75 mJ mJ 250 A 0.85 °C/W October, 2012 Td(on) Tr Td(off) Test Conditions www.microsemi.com 2-8 APTGT50TL601G– Rev1 Symbol Characteristic APTGT50TL601G CR1 to CR4 diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current VR=600V DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy RthJC Test Conditions IF = 30A VGE = 0V IF = 30A VR = 300V di/dt =1800A/µs Min 600 Typ Tj = 25°C Tj = 150°C Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C 30 1.6 1.5 100 150 1.5 Tj = 150°C Tj = 25°C Tj = 150°C 3.1 0.34 0.75 Max 150 350 Junction to Case Thermal Resistance Unit V µA A 2 V ns µC mJ 2.45 °C/W Max Unit CR5 & CR6 diode ratings and characteristics Symbol Characteristic VRRM IRM IF Min Maximum Reverse Leakage Current trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy V VR=600V Tj = 25°C Tj = 150°C IF = 50A VGE = 0V Tc = 80°C Tj = 25°C Tj = 150°C Tj = 25°C 50 1.6 1.5 100 Tj = 150°C Tj = 25°C 150 2.6 Tj = 150°C Tj = 25°C Tj = 150°C 5.4 0.60 1.20 DC Forward current Diode Forward Voltage Typ 600 Maximum Peak Repetitive Reverse Voltage VF RthJC Test Conditions IF = 50A VR = 300V di/dt =1800A/µs 150 350 Junction to Case Thermal Resistance µA A 2 V ns µC mJ 1.42 °C/W Max Unit V Thermal and package characteristics RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 Min 4000 -40 -40 -40 2 Typ 175 125 100 3 80 °C N.m g October, 2012 Characteristic 3-8 APTGT50TL601G– Rev1 Symbol VISOL TJ TSTG TC Torque Wt APTGT50TL601G SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Q1 to Q4 Typical performance curve 80 VCE=300V D=50% R G=8.2Ω T J=150°C 60 T c =85°C 40 October, 2012 Hard switching 20 0 0 20 40 60 80 IC (A) www.microsemi.com 4-8 APTGT50TL601G– Rev1 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current APTGT50TL601G Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=25°C TJ = 150°C TJ=125°C VGE=13V TJ=150°C 60 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 3.5 2.5 60 E (mJ) IC (A) 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 3 TJ=25°C 80 0.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V 80 IC (A) IC (A) 80 40 Eoff 2 1.5 1 TJ=150°C 20 0 0 5 6 7 Eon 0.5 TJ=25°C 8 9 10 11 0 12 20 40 Switching Energy Losses vs Gate Resistance 80 100 Reverse Bias Safe Operating Area 3 125 2.5 Eoff 100 IC (A) 2 E (mJ) 60 IC (A) VGE (V) 1.5 50 VCE = 300V VGE =15V IC = 50A TJ = 150°C 1 Eon 0.5 75 VGE=15V TJ=150°C RG=8.2Ω 25 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.6 0.9 0.7 0.2 October, 2012 0.5 0.4 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-8 APTGT50TL601G– Rev1 Thermal Impedance (°C/W) 1 APTGT50TL601G CR1 to CR4 Typical performance curve Forward Characteristic of diode 60 50 IF (A) 40 30 20 TJ=150°C 10 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 1 1 VCE = 300V VGE =15V IC = 30A TJ = 150°C 0.75 E (mJ) E (mJ) 0.75 0.5 0.5 0.25 0.25 0 0 0 10 20 30 40 50 60 Gate Resistance (ohms) VCE = 300V VGE = 15V RG = 10Ω TJ = 150°C 0 70 10 20 30 40 50 60 IF (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 2 0.9 0.7 1.5 0.5 1 0.3 0.5 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com October, 2012 2.5 6-8 APTGT50TL601G– Rev1 Thermal Impedance (°C/W) 3 APTGT50TL601G CR5 & CR6 Typical performance curve Forward Characteristic of diode 100 IF (A) 80 60 40 TJ=150°C 20 TJ=25°C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 Switching Energy Losses vs Gate Resistance Energy losses vs Collector Current 1.5 1.2 1 0.8 E (mJ) E (mJ) 1 0.6 VCE = 300V VGE =15V IC = 50A TJ = 150°C 0.4 0.2 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 0.5 0 0 5 15 25 35 45 55 0 65 20 40 60 80 100 IF (A) Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 1 0.9 0.7 0.8 0.5 0.6 0.3 0.4 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com October, 2012 1.4 7-8 APTGT50TL601G– Rev1 Thermal Impedance (°C/W) 1.6 APTGT50TL601G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 8-8 APTGT50TL601G– Rev1 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.