APTM60H23FT1G VDSS = 600V RDSon = 190m typ @ Tj = 25°C ID = 20A @ Tc = 25°C Full - Bridge MOSFET Power Module 4 3 Q1 Q3 5 6 2 1 Q2 Q4 7 9 8 11 10 NTC 12 Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS 8™ FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Pins 3/4 must be shorted together Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 600 20 15 125 ±30 230 208 17 Unit V A V m W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM60H23FT1G – Rev1 October, 2012 Symbol VDSS APTM60H23FT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS = 600V VGS = 0V Tj = 125°C VGS = 10V, ID = 17A VGS = VDS, ID = 1mA VGS = ±30 V Min 3 Typ 190 4 Max 250 1000 230 5 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 17A Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Min Typ 5316 610 56 pF 165 nC 36 70 37 Resistive switching @ 25°C VGS = 15V VBus = 400V ID = 17A RG = 4.7 43 ns 115 34 Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Typ Tj = 25°C Max 20 15 1 30 200 Tj = 125°C 370 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 17A IS = - 17A VR = 100V diS/dt = 100A/µs Tj = 25°C 0.76 Tj = 125°C 1.91 Unit A V V/ns ns µC www.microsemi.com 2–6 APTM60H23FT1G – Rev1 October, 2012 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 17A di/dt 1000A/µs VDD 400V Tj 125°C APTM60H23FT1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 2 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ Max 0.6 150 125 100 3 80 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT R 25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T exp B 25 / 85 T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM60H23FT1G – Rev1 October, 2012 SP1 Package outline (dimensions in mm) APTM60H23FT1G Typical Performance Curve Low Voltage Output Characteristics Low Voltage Output Characteristics 50 VGS=10V 62.5 TJ=25°C ID, Drain Current (A) 50 TJ=125°C 37.5 25 12.5 VGS=7 &8V 40 6V 30 20 5.5V 10 TJ=125°C 0 0 5 10 15 0 20 0 5 VGS=10V ID=17A 2 1.5 1 0.5 0 50 75 100 125 40 TJ=125°C 20 TJ=25°C 10 0 1 3 4 5 6 7 Capacitance vs Drain to Source Voltage 100000 VDS=120V ID=17A TJ=25°C C, Capacitance (pF) VGS, Gate to Source Voltage 2 VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source VDS=300V 8 6 VDS=480V 4 2 0 25 30 0 150 12 0 25 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 30 TJ, Junction Temperature (°C) 10 20 50 3 25 15 Transfert Characteristics Normalized RDSon vs. Temperature 2.5 10 VDS, Drain to Source Voltage (V) ID, Drain Current (A) RDSon, Drain to Source ON resistance VDS, Drain to Source Voltage (V) 50 75 100 125 150 175 Ciss 10000 1000 Coss 100 10 Crss 1 0 50 100 150 200 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 4–6 APTM60H23FT1G – Rev1 October, 2012 ID, Drain Current (A) 75 APTM60H23FT1G ISD, Reverse Drain Current (A) Drain Current vs Source to Drain Voltage 60 50 40 TJ=125°C 30 20 TJ=25°C 10 0 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Source to Drain Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.9 0.7 0.5 0.3 0.1 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 5–6 APTM60H23FT1G – Rev1 October, 2012 Thermal Impedance (°C/W) 0.7 APTM60H23FT1G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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