APTML102UM09R004T3AG VDSS = 100V RDSon = 09m typ @ Tj = 25°C ID = 154A* @ Tc = 25°C Linear MOSFET Power Module Application Electronic load dedicated to power supplies and battery discharge testing Features Linear MOSFET Very low stray inductance Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance Benefits 28 27 26 25 20 19 18 23 22 29 16 30 15 14 31 13 32 2 3 4 7 8 10 11 12 Direct mounting to heatsink (isolated package) easy series and parallels combinations for power and voltage improvements Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Pins 13/14 ; 29/30 ; 31/32 must be shorted together Absolute maximum ratings (per leg) IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 154* 115* 430 ±30 10 480 100 50 3000 Unit V A V m W A October, 2012 ID Parameter Drain - Source Breakdown Voltage mJ * Output current per leg must be limited to 67A @ TC=25°C and 47A @ TC=80°C to not exceed the shunt specification. In addition the current capability must be limited to 75A on pins 13/14 to not exceed current capability of the pins. In saturation mode These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–4 APTML102UM09R004T3AG – Rev 1 Symbol VDSS APTML102UM09R004T3AG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics (per leg) Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Typ Max 100 500 10 4 ±100 Unit Typ 9875 3940 1470 Max Unit Typ 4.4 2 Max Tj = 25°C Tj = 125°C VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 9 2 µA m V nA Dynamic Characteristics (per leg) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min pF Shunt Electrical Characteristics (per leg) Symbol Characteristic Rsh Resistance value Tsh Tolerance Psh Load capacity Ish Current capacity Min TC=25°C TC=80°C TC=25°C TC=80°C 20 10 67 47 Unit m % W A Temperature sensor PTC Symbol R25 R100/R25 R-55/R25 B Characteristic Resistance @ 25°C Resistance ratio Resistance ratio Temperature coefficient Tamb=100°C & 25°C Tamb=-55°C & 25°C Min 1980 1.676 0.48 Typ 1.696 0.49 7900 Max 2020 1.716 0.50 Unit ppm/K Thermal and package characteristics Min MOSFET (per leg) RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 4000 -40 -40 -40 2 Typ Max 0.26 150 125 100 3 110 Unit °C/W V October, 2012 Characteristic Junction to Case Thermal Resistance °C N.m g 2–4 APTML102UM09R004T3AG – Rev 1 Symbol RthJC VISOL TJ TSTG TC Torque Wt APTML102UM09R004T3AG SP3 Package outline (dimensions in mm) See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com Typical Performance Curve (linear mode) (per leg) Power vs Drain source voltage Drain Current vs Drain source voltage 400 TJ=125°C TJ=125°C 300 October, 2012 10 350 250 200 1 0 20 40 60 80 100 0 25 50 75 100 Drain Source Voltage (V) Drain Source Voltage (V) www.microsemi.com 3–4 APTML102UM09R004T3AG – Rev 1 Dissipated Power (W) Drain Current (A) 100 APTML102UM09R004T3AG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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