APTM120DA30CT1G VDSS = 1200V RDSon = 300m typ @ Tj = 25°C ID = 31A @ Tc = 25°C Boost chopper MOSFET + SiC chopper diode Power Module Application 5 6 11 CR1 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features 3 4 Q2 NTC 9 10 1 2 Power MOS 8™ MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF 12 Very low stray inductance Internal thermistor for temperature monitoring High level of integration Benefits Pins 1/2 ; 3/4 ; 5/6 must be shorted together Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant Absolute maximum ratings ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 1200 31 23 195 ±30 360 657 25 Unit V A V m W A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120DA30CT1G – Rev1 October, 2012 Symbol VDSS APTM120DA30CT1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Tj = 25°C VDS =1200V VGS = 0V Tj = 125°C VGS = 10V, ID = 25A VGS = VDS, ID = 2.5mA VGS = ±30 V Min 3 Typ 300 4 Max 100 500 360 5 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 600V ID = 25A Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Min Typ 14560 1340 172 pF 560 nC 90 265 100 Resistive switching @ 25°C VGS = 15V VBus = 800V ID = 25A RG = 2.2 60 ns 315 90 SiC chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current Test Conditions VR=1200V Min 1200 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Typ Max 64 112 20 1.6 2.3 400 2000 IF DC Forward Current VF Diode Forward Voltage IF = 20A QC Total Capacitive Charge IF = 20A, VR = 600V di/dt =1000A/µs 80 C Total Capacitance f = 1MHz, VR = 200V 192 f = 1MHz, VR = 400V 138 Unit V µA A 1.8 3 V nC pF RthJC VISOL TJ TSTG TC Torque Wt Min Transistor SiC Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink www.microsemi.com M4 4000 -40 -40 -40 2 Typ Max 0.19 1 Unit °C/W V 150 125 100 3 80 °C N.m g 2–6 APTM120DA30CT1G – Rev1 October, 2012 Thermal and package characteristics Symbol Characteristic APTM120DA30CT1G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT R 25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T exp B 25 / 85 T25 T SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Typical Mosfet Performance Curve 0.9 0.16 0.7 0.12 0.08 0.04 0.5 0.3 Single P ulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 3–6 APTM120DA30CT1G – Rev1 October, 2012 Thermal Impedance (°C/W) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.2 APTM120DA30CT1G Low Voltage Output Characteristics 60 TJ=25°C 40 20 TJ=125°C 0 40 30 5V 20 4.5V 10 0 0 5 10 15 20 0 5 VDS, Drain to Source Voltage (V) 40 VGS=10V ID=25A ID, Drain Current (A) 20 25 30 2 1.5 1 0.5 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 30 TJ=125°C 20 TJ=25°C 10 0 25 50 75 100 125 150 0 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) TJ, Junction Temperature (°C) Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source 100000 12 VDS=240V 10 Ciss C, Capacitance (pF) ID=25A TJ=25°C VDS=600V 8 6 VDS=960V 4 2 0 10000 1000 Coss Crss 100 10 0 100 200 300 400 500 600 Gate Charge (nC) 0 50 100 150 200 VDS, Drain to Source Voltage (V) www.microsemi.com 4–6 APTM120DA30CT1G – Rev1 October, 2012 RDSon, Drain to Source ON resistance 15 Transfert Characteristics 3 2.5 10 VDS, Drain to Source Voltage (V) Normalized RDS(on) vs. Temperature VGS, Gate to Source Voltage VGS=6, 7, 8 & 9V TJ=125°C VGS=10V ID, Drain Current (A) ID, Drain Current (A) Low Voltage Output Characteristics 50 80 APTM120DA30CT1G Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 40 200 30 TJ=75°C 20 TJ=125°C 10 TJ=175°C IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 150 100 TJ=75°C TJ=125°C 50 TJ=175°C 0 400 600 TJ=25°C 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 1200 1000 800 600 400 200 0 1 10 100 VR Reverse Voltage 1000 www.microsemi.com 5–6 APTM120DA30CT1G – Rev1 October, 2012 C, Capacitance (pF) 1400 APTM120DA30CT1G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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