APT58F50J 500V, 58A, 0.065Ω Max, trr ≤320ns N-Channel FREDFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. D G SO 2 T- 27 "UL Recognized" file # E145592 IS OTO P ® D APT58F50J Single die FREDFET G S FEATURES TYPICAL APPLICATIONS • Fast switching with low EMI • ZVS phase shifted and other full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 58 Continuous Drain Current @ TC = 100°C 37 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1845 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 42 A 1 270 Thermal and Mechanical Characteristics Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 540 RθJC Junction to Case Thermal Resistance 0.23 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com 0.15 -55 150 °C/W °C V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m Rev C 9-2011 Min Characteristic 050-8177 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 500 ∆VBR(DSS)/∆TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ∆VGS(th)/∆TJ VGS = 10V, ID = 42A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 500V TJ = 25°C VGS = 0V TJ = 125°C Typ Max 0.60 0.055 4 -10 0.065 5 250 1000 ±100 VGS = ±30V Unit V V/°C Ω V mV/°C μA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250μA Breakdown Voltage Temperature Coefficient RDS(on) APT58F50J Min Test Conditions VDS = 50V, ID = 42A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 65 13500 185 1455 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 845 VGS = 0V, VDS = 0V to 333V 425 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 333V, ID = 42A tr td(off) tf Turn-Off Delay Time 340 75 155 60 70 155 50 VGS = 0 to 10V, ID = 42A, VDS = 250V RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min Typ D A 270 S ISD = 42A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C TJ = 25°C diSD/dt = 100A/μs TJ = 125°C VDD = 100V TJ = 25°C Unit 58 G ISD = 42A 3 Max TJ = 125°C ISD ≤ 42A, di/dt ≤1000A/μs, VDD = 333V, TJ = 125°C 290 500 1.67 4.36 12 17.8 1.0 320 600 V ns μC A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 2.08mH, RG = 25Ω, IAS = 42A. 050-8177 Rev C 9-2011 3 Pulse test: Pulse Width < 380μs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.14E-7/VDS^2 + 7.31E-8/VDS + 2.09E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT58F50J 350 V GS 160 = 10V T = 125°C TJ = -55°C ID, DRIAN CURRENT (A) 250 200 TJ = 25°C 150 100 TJ = 150°C 50 120 6V 100 80 60 40 5V 20 TJ = 125°C 0 0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 4.5V 0 Figure 1, Output Characteristics 2.5 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 280 NORMALIZED TO VGS = 10V @ 42A VDS> ID(ON) x RDS(ON) MAX. 250μSEC. PULSE TEST @ <0.5 % DUTY CYCLE 240 2.0 ID, DRAIN CURRENT (A) 1.5 1.0 0.5 200 TJ = -55°C 160 TJ = 25°C 120 TJ = 125°C 80 40 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 120 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 Ciss 10,000 80 TJ = 125°C 60 40 1000 Coss 100 Crss 20 0 0 16 VGS, GATE-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) TJ = -55°C TJ = 25°C 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 100V 10 VDS = 250V 8 6 VDS = 400V 4 2 0 0 280 ID = 42A 14 0 10 90 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE 100 240 200 160 TJ = 25°C 120 TJ = 150°C 80 40 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage Rev C 9-2011 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE = 7,8 & 10V GS 050-8177 ID, DRAIN CURRENT (A) 300 0 V J 140 APT58F50J 300 300 100 IDM 10 13μs Rds(on) 100μs 1ms 10ms 1 0.1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 100ms DC line TJ = 125°C TC = 75°C 1 13μs 10 100μs 1ms Rds(on) 10ms TJ = 150°C TC = 25°C 1 0.1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area IDM 100ms DC line Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 P DM ZθJC, THERMAL IMPEDANCE (°C/W) 0.25 0.3 t2 0.05 t1 = Pulse Duration t 0.1 0 t1 0.05 10-5 Duty Factor D = 1 /t2 Peak T J = P DM x Z θJC + T C SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) Rev C 9-2011 3.3 (.129) 3.6 (.143) 050-8177 8.9 (.350) 9.6 (.378) Hex Nut M 4 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 14.9 (.587) 15.1 (.594) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drai n * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) Gate