APT40DC120HJ ISOTOP® SiC Diode Full Bridge Power Module VRRM = 1200V IC = 40A @ Tc = 100°C Application Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~ SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF ISOTOP® Package (SOT-227) Very low stray inductance High level of integration ~ Benefits - Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant ISOTOP Symbol VR VRRM IF(AV) IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Average Forward Current Duty cycle = 50% Non-Repetitive Forward Surge Current 10 µs TC = 100°C TC = 25°C Max ratings Unit 1200 V 40 500 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APT40DC120HJ – Rev 1 October, 2012 Absolute maximum ratings APT40DC120HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions VF Diode Forward Voltage IRM Maximum Reverse Leakage Current QC Total Capacitive Charge C Total Capacitance Min Tj = 25°C Tj = 175°C Tj = 25°C VR = 1200V Tj = 175°C IF = 40A, VR = 600V di/dt =2000A/µs f = 1MHz, VR = 200V f = 1MHz, VR = 400V IF = 40A Typ 1.6 2.3 128 224 Max 1.8 3.0 800 4000 Unit V µA 160 nC 384 276 pF Thermal and package characteristics Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt Characteristic Junction to Case Thermal resistance Junction to Ambient Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight Typ Max 0.39 20 Unit °C/W V 175 300 1.5 29.2 °C N.m g SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) 38.0 (1.496) 38.2 (1.504) www.microsemi.com 2-4 APT40DC120HJ – Rev 1 October, 2012 31.5 (1.240) 31.7 (1.248) APT40DC120HJ Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.9 0.3 0.7 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 80 400 60 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C TJ=75°C 40 TJ=125°C 20 TJ=175°C 300 200 0.5 1 1.5 2 2.5 3 TJ=125°C 100 0 0 TJ=75°C 3.5 VF Forward Voltage (V) TJ=175°C 0 400 TJ=25°C 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) Capacitance vs.Reverse Voltage 2800 C, Capacitance (pF) 2400 2000 1600 1200 800 400 0 10 100 VR Reverse Voltage 1000 ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 3-4 APT40DC120HJ – Rev 1 October, 2012 1 APT40DC120HJ DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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