APT40DR160HJ VRRM = 1600V IF = 40A @ Tc = 80°C ISOTOP® Rectifier diode full bridge Power Module Application Input mains rectifier Features ~ ~ Planar double passivated chips High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) Benefits + - Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM IF IFSM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage DC Forward Current Non-Repetitive Forward Surge Current t=10ms TC = 80°C TJ = 45°C Max ratings Unit 1600 V 40 400 A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-4 APT40DR160HJ – Rev 1 October, 2012 Absolute maximum ratings APT40DR160HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions IR Reverse Current VR = 1600V VF Forward Voltage IF = 40A VT rT On – state Voltage On – state Slope resistance Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ Max 20 2 1.3 1.1 0.8 10.5 Unit µA mA V V mΩ Thermal and package characteristics Characteristic Junction to Case Thermal resistance Junction to Ambient Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight SOT-227 (ISOTOP®) Package Outline r = 4.0 (.157) (2 places) Max 1.5 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) Typ W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) 38.0 (1.496) 38.2 (1.504) www.microsemi.com 2-4 APT40DR160HJ – Rev 1 October, 2012 Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt APT40DR160HJ Typical Performance Curve Forward Characteristic Non-Repetitive Forward Surge Current 400 80 TJ=125°C IFSM (A) IF (A) TJ=45°C 300 60 40 TJ=125°C 200 100 20 TJ=25°C 0 0.0 0.4 0.8 1.2 1.6 50Hz 80% VRRM 0 0.01 2.0 0.1 t (s) VF (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.6 1.4 0.9 1.2 0.7 1 0.8 0.5 0.6 0.3 0.4 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 3-4 APT40DR160HJ – Rev 1 October, 2012 Rectangular Pulse Duration in Seconds APT40DR160HJ DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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