APT77N60JC3
0.035Ω
600V 77A
Super Junction MOSFET
S
S
• Ultra Low RDS(ON)
D
G
• Low Miller Capacitance
S
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
OT
22
7
"UL Recognized"
file # E145592
IS OTO P ®
• Extreme dv/dt Rated
D
• Dual die (parallel)
G
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
All Ratings per die: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VDSS
ID
S
Parameter
APT77N60JC3
UNIT
600
Volts
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
1
77
2
Amps
231
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
Gate-Source Voltage Transient
±30
Total Power Dissipation @ TC = 25°C
568
Watts
Linear Derating Factor
4.55
W/°C
VGSM
PD
TJ,TSTG
TL
dv/
dt
Operating and Storage Junction Temperature Range
Volts
-55 - to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
300
Drain-Source Voltage slope (VDS = 400V, ID = 77A, TJ = 125°C)
50
V/ns
20
Amps
2
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
3
1
mJ
180
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
BV(DSS)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA)
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
MIN
4
TYP
MAX
600
(VGS = 10V, ID = 70A)
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V)
UNIT
Volts
.030
0.035
1.0
50
Ohms
μA
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C)
500
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±200
nA
3.9
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5.92mA)
2.1
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
Microsemi Website - http://www.microsemi.com
050-7146 Rev H 3-2012
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT77N60JC3
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
4400
Crss
Reverse Transfer Capacitance
f = 1 MHz
290
Qg
Total Gate Charge
3
VGS = 10V
505
Qgs
Gate-Source Charge
VDD = 300V
48
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
td(off)
ID = 77A @ 25°C
tf
ID = 77A @ 125°C
110
165
8
12
RG = 0.9Ω
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
nC
27
VDD = 380V
Eon
640
18
VGS = 10V
Fall Time
pF
240
RESISTIVE SWITCHING
Turn-off Delay Time
UNIT
13600
VGS = 0V
Rise Time
MAX
6
INDUCTIVE SWITCHING @ 25°C
ID = 77A, RG = 5Ω
2880
6
INDUCTIVE SWITCHING @ 125°C
2300
ns
1670
VDD = 400V, VGS = 15V
VDD = 400V, VGS = 15V
ID = 77A, RG = 5Ω
μJ
3100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
MIN
231
Pulsed Source Current
1
(Body Diode)
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = - 77A)
1
t rr
Reverse Recovery Time (IS = -77A, dl S/dt = 100A/μs, VR = 350V)
Q rr
Reverse Recovery Charge (IS = -77A, dl S/dt = 100A/μs, VR = 350V)
/dt
Peak Diode Recovery
dv
/dt
MAX
77
Continuous Source Current (Body Diode)
ISM
dv
TYP
1.2
861
UNIT
Amps
Volts
ns
μC
46
5
6
V/ns
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
0.22
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.7
0.5
Note:
0.10
P DM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7146 Rev H 3-2012
0.9
0.15
0.3
0.05
SINGLE PULSE
0.1
0.05
10-5
t1
t2
t
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
0
10-4
°C/W
4 Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID77A di/dt ≤ 700A/μs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.25
0.20
UNIT
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance
APT77N60JC3
200
VGS =15 &10V
ID, DRAIN CURRENT (AMPERES)
180
6V & 6.5V
160
5.5V
140
120
100
5V
80
60
4.5V
40
4V
20
0
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
160
140
120
100
80
TJ = +25°C
60
40
TJ = +125°C
20
0
0
1
2
3
4
5
6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
60
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
70
V
GS
1.30
= 10V @ 47A
1.20
1.10
VGS=10V
1.00
VGS=20V
0.90
0.80
0
20 40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
3
I = 47A
D
2.5
V
GS
= 10V
2.0
1.5
1.0
0.5
0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO
1.15
80
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.40
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7146 Rev H 3-2012
ID, DRAIN CURRENT (AMPERES)
180
TJ = -55°C
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, NOT USED
200
Typical Performance
DC line
10
100μs
10μs
1ms
10ms
100ms
1
C, CAPACITANCE (pF)
100
Coss
1,000
100
Crss
10
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I = 77A
D
12
VDS= 120V
VDS= 300V
8
VDS= 480V
4
0
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
Ciss
10,000
0.1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT77N60JC3
60,000
1000
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
250
600
V
DD
td(off)
500
400
V
DD
R
G
G
= 400V
= 5Ω
T = 125°C
J
L = 100μH
tf
= 400V
= 5Ω
T = 125°C
J
L = 100μH
300
200
tr and tf (ns)
td(on) and td(off) (ns)
R
200
150
100
tr
50
100
td(on)
0
10
30
0
10
50
70
90
110 130 150
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
70
90
110 130 150
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
8000
V
DD
7000
R
G
V
DD
14000
L = 100μH
EON includes
diode reverse recovery.
Eoff
4000
3000
Eon
2000
= 400V
I = 77A
D
T = 125°C
J
L = 100μH
12000
Eoff
EON includes
diode reverse recovery.
10000
8000
6000
4000
Eon
2000
1000
0
10
SWITCHING ENERGY (mJ)
SWITCHING ENERGY (mJ)
050-7146 Rev H 3-2012
J
5000
50
16000
= 400V
= 5Ω
T = 125°C
6000
30
30
50
70
90
110 130 150
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT77N60JC3
Gate Voltage
T
10%
90%
Gate Voltage
TJ = 125 C
TJ = 125 C
td(on)
td(off)
tr
Collector Current
Collector Current
tf
90%
90%
5%
5%
10%
Collector Voltage
0
10%
Collector Voltage
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT30DF60
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Dimensions in Millimeters and (Inches)
Gate
050-7146 Rev H 3-2012
V DD