PD - 97145 IRF8313PbF HEXFET® Power MOSFET Applications l l VDSS RDS(on) max Qg 30V 15.5m:@VGS = 10V 6.0nC Load Switch DC/DC Conversion Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l RoHS Compliant (Halogen Free) S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 Description The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Max. Units 30 ±20 V 9.7 8.1 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 2.0 PD @TA = 70°C Power Dissipation 1.3 TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range ID @ TA = 70°C c A 81 W 0.016 -55 to + 175 W/°C °C Thermal Resistance Parameter RθJL RθJA g Junction-to-Ambient fg Junction-to-Drain Lead Typ. Max. ––– 42 ––– 62.5 Units °C/W Notes through are on page 9 ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. www.irf.com 1 11/5/08 IRF8313PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– RDS(on) Static Drain-to-Source On-Resistance ––– 12.5 15.5 ––– 18.6 21.6 V V/°C Reference to 25°C, ID = 1mA mΩ VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 23 ––– ––– Qg IGSS Total Gate Charge ––– 6.0 9.0 Qgs1 Pre-Vth Gate-to-Source Charge ––– 1.5 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 0.9 ––– Qgd Gate-to-Drain Charge ––– 2.2 ––– Qgodr Conditions VGS = 0V, ID = 250μA μA nA S VGS = 10V, ID = 9.7A VGS = 4.5V, ID = 8.0A e e VDS = VGS, ID = 25μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 8.0A VDS = 15V nC VGS = 4.5V ID = 8.0A Gate Charge Overdrive ––– 1.4 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 2.9 ––– See Figs. 17a & 17b Qoss Output Charge ––– 3.8 ––– nC Rg Gate Resistance ––– 2.2 3.6 Ω td(on) Turn-On Delay Time ––– 8.3 ––– VDD = 15V, VGS = 4.5V tr Rise Time ––– 9.9 ––– td(off) Turn-Off Delay Time ––– 8.5 ––– ID = 8.0A RG = 1.8Ω tf Fall Time ––– 4.2 ––– See Fig. 15a & 15b Ciss Input Capacitance ––– 760 ––– VGS = 0V Coss Output Capacitance ––– 172 ––– Crss Reverse Transfer Capacitance ––– 87 ––– ns pF VDS = 16V, VGS = 0V VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units ––– 46 mJ ––– 8.0 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– ISM (Body Diode) Pulsed Source Current ––– ––– VSD (Body Diode) Diode Forward Voltage ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 8.0A, VGS = 0V trr Reverse Recovery Time ––– 20 30 ns TJ = 25°C, IF = 8.0A, VDD = 15V Qrr Reverse Recovery Charge ––– 10 15 nC di/dt = 100A/μs ton Forward Turn-On Time 2 c 3.1 A 82 A MOSFET symbol D showing the integral reverse G S e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF8313PbF 100 100 10 BOTTOM TOP 1 0.1 ≤60μs PULSE WIDTH ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 10 BOTTOM 1 2.3V Tj = 25°C ≤60μs PULSE WIDTH 2.3V 0.01 0.1 10 0.1 100 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 2.0 10 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) Tj = 175°C 0.1 1 VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V TJ = 175°C 1 TJ = 25°C 0.1 VDS = 15V ≤60μs PULSE WIDTH 2 3 4 5 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 1.5 1.0 0.5 0.01 1 ID = 9.8A VGS = 10V 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRF8313PbF 10000 16 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) ID= 8.0A C, Capacitance (pF) Coss = Cds + Cgd 1000 Ciss Coss Crss 100 VDS = 24V VDS = 15V 12 8 4 0 10 0.1 1 10 0 100 6 8 10 12 14 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 100 ISD , Reverse Drain Current (A) 4 Qg, Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) TJ = 175°C OPERATION IN THIS AREA LIMITED BY R DS (on) 100 10 TJ = 25°C 1 100μsec 1msec 10 10msec 1 TA = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 2 1.8 0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF8313PbF 2.5 VGS(th), Gate Threshold Voltage (V) 10 ID , Drain Current (A) 8 6 4 2 0 25 50 75 100 125 150 ID = 250μA 2.0 ID = 25μA 1.5 1.0 0.5 175 -75 -50 -25 TA, Ambient Temperature (°C) 0 25 50 75 100 125 150 175 TJ , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature 100 Thermal Response ( Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 0.1 τJ SINGLE PULSE ( THERMAL RESPONSE ) R1 R1 τJ τ1 R2 R2 R3 R3 R4 R4 R5 R5 R6 R6 R7 R7 R8 R8 τ3 τ4 τ5 τ6 τ7 τ8 τa τ1 τ2 τ2 τ3 τ4 τ5 τ6 τ7 τ8 Ci= τi/Ri Ci i/Ri Ri (°C/W) τι (sec) 0.1396039 0.4048955 0.5273926 1.2084906 1.5779475 7.0394610 18.0102679 33.5929564 0.000010 0.000030 0.000020 0.001289 0.000340 0.009747 27.798341 0.575346 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 200 38 ID = 9.8A 34 30 26 22 18 TJ = 125°C 14 TJ = 25°C 10 2.0 4.0 6.0 8.0 10.0 EAS, Single Pulse Avalanche Energy (mJ) RDS (on), Drain-to -Source On Resistance (mΩ) IRF8313PbF ID 3.0A 5.0A BOTTOM 8.0A TOP 160 120 80 40 0 25 VGS, Gate-to-Source Voltage (V) 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS 15V D.U.T RG VGS 20V DRIVER L VDS tp + V - DD IAS tp A 0.01Ω I AS Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD VDS 90% D.U.T. + - VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 15a. Switching Time Test Circuit 6 Fig 14b. Unclamped Inductive Waveforms 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com IRF8313PbF Driver Gate Drive D.U.T P.W. + + - - • • • • D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer Period VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K 20K VCC Vgs(th) S Qgodr Fig 17a. Gate Charge Test Circuit www.irf.com Qgd Qgs2 Qgs1 Fig 17b. Gate Charge Waveform 7 IRF8313PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 6 8 7 6 5 1 2 3 4 H E 0.25 [.010] A 6X e1 8X b 0.25 [.010] A A1 MIL L IME T E R S MAX MIN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B AS IC 1.27 B AS IC MAX .025 B AS IC 0.635 B AS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° e1 e INCH E S MIN K x 45° C y 0.10 [.004] 8X L 8X c 7 C A B FOOT PRINT 8X 0.72 [.028] NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: THIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECTIFIER LOGO XXXX F7101 DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRF8313PbF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.43mH, RG = 25Ω, IAS = 8.0A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ of approximately 90°C. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRF8313PbF Standard Pack Orderable Part number Package Type IRF8313PbF SO-8 Tube/Bulk IRF8313TRPbF SO-8 Tape and Reel Form Note Quantity 95 4000 Qualification Information† Qualification Level Moisture Sensitivity Level RoHS Compliant Consumer †† (per JEDEC JESD47F††† guidelines) SO-8 MSL1 (per JEDEC J-STD-020D†††) Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http//www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/08 10 www.irf.com