APT5010JLLU2 ISOTOP® Boost chopper MOSFET Power Module K D G S K S D G VDSS = 500V RDSon = 100m max @ Tj = 25°C ID = 41A @ Tc = 25°C Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction Brake switch Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Very rugged Low profile RoHS Compliant ISOTOP Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS IFAV IFRMS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25°C Tc = 80°C Max ratings 500 41 30 164 ±30 100 378 41 50 1600 30 39 Unit V A V m W A October 2012 ID Parameter Drain - Source Breakdown Voltage mJ A These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–8 APT5010JLLU2 – Rev 2 Symbol VDSS APT5010JLLU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 23A VGS = VDS, ID = 2.5mA VGS = ±20 V, VDS = 0V 3 Max 100 500 100 5 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 41A @ TJ=25°C Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Eon Eoff Eon Eoff Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Min Typ 4360 894 60 pF 96 nC 24 49 Resistive switching @ 25°C VGS = 15V VBus = 250V ID = 41A @ TJ=25°C RG = 0.6 Inductive Switching @ 25°C Vbus = 330V, VGS=15V ID=46A, RG=5Ω Inductive Switching @ 125°C Vbus = 330V, VGS=15V ID=46A, RG=5Ω 11 15 25 ns 3 543 µJ 509 843 µJ 593 Chopper diode ratings and characteristics Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Min Typ 1.6 1.9 1.4 www.microsemi.com Unit V 250 500 44 Tj = 125°C Max 1.8 µA pF ns A October 2012 VF Characteristic nC ns nC A 2–8 APT5010JLLU2 – Rev 2 Symbol APT5010JLLU2 Thermal and package characteristics Symbol Characteristic RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) Min Typ MOSFET Diode RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight 2500 -55 Max 0.33 1.21 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g www.microsemi.com 3–8 APT5010JLLU2 – Rev 2 October 2012 Typical MOSFET Performance Curve www.microsemi.com 4–8 APT5010JLLU2 – Rev 2 October 2012 APT5010JLLU2 APT5010JLLU2 www.microsemi.com 5–8 APT5010JLLU2 – Rev 2 October 2012 Typical Diode Performance Curve www.microsemi.com 6–8 APT5010JLLU2 – Rev 2 October 2012 APT5010JLLU2 APT5010JLLU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Cathode 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 7–8 APT5010JLLU2 – Rev 2 October 2012 Dimensions in Millimeters and (Inches) APT5010JLLU2 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. 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Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 8–8 APT5010JLLU2 – Rev 2 October 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. 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