MS3011 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS Features • • • • • • 2.0 GHz POUT = 30.0 dBm GP = 7.0 dB MINIMUM 15:1 VSWR @ RATED CONDITIONS GOLD METALIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS3011 is a hermetically sealed NPN power transistor featuring a unique matrix structure. This device is specifically designed for Class A linear applications to provide high gain and high output power at the 1.0 dB compression point. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol PD IC TJ VCBO TSTG Parameter Total Dissipation Device Current Junction Temperature Collector - Base Voltage Storage Temperature Value Unit 5.5 0.5 +200 20 -65 to +200 W A ºC 17 °C/W V ºC Thermal Data RTH(J-C) Thermal Resistance Junction-case* *Applies only to rated RF amplifier operation MS3011.PDF 11-18-02 MS3011 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol BVCEO BVCBO BVEBO ICEO HFE Test Conditions IC = 1 mA IC = 1 mA IE= 1 mA VCB = 18 V VCE = 5 V IB = 0 mA IE = 0 mA IC = 0 mA IC = 250 mA Min. Value Typ. Max. Unit 20 50 3.5 --15 ----------- ------1 120 V V V mA --- DYNAMIC Symbol GP ∆GP COB Test Conditions Min. Value Typ. Max. Unit f = 2.0 GHz, Pout = 30.0 dBm, VCE = 18V, Ic = 220mA 7.0 --- --- dB f = 2.0 GHz, Pout = 30.0 dBm, ∆Pout = 10 dB --- --- 1 dB f = 1 MHz --- --- 5.0 pF MS3011.PDF 11-18-02 VCB =28V MS3011 PACKAGE MECHANICAL DATA MS3011.PDF 11-18-02