MS2205 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • 1025-1150 MHz GOLD METALLIZATION INFINITE VSWR CAPABILITY @ RATED CONDITIONS Pout = 4 W MINIMUM GP= 10 dB COMMON BASE CONFIGURATION .280 2LFL (M220) Epoxy Sealed DESCRIPTION: The MS2205 is a common base, silicon NPN microwave transistor designed for Class C driver applications under DME or IFF pulse conditions. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol PDISS VCE TJ IC TSTG Parameter Power Dissipation Collector-Emitter Bias Voltage Junction Temperature Device Current Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance* Value 7.5 37 200 1.0 -65 to +200 35 Revision 1 Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. Unit W V ºC A ºC °C/W MS2205 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC Symbol BVCBO BVCEO BVEBO ICES HFE DYNAMIC Symbol POUT GP Conditions Test Conditions IC = 1 mA IC = 5 mA IE = 1.0 mA VCE = 35 V VCE = 5 V Value Typ. Max. Unit Min. Value Typ. Max. Unit 10 --- --- dB Min. IE = 0 mA IB = 0mA IC = 0 mA 45 20 3.5 --20 IC = 100 mA Test Conditions f =1025 - 1150 MHz PIN = 400mW VCE =35V f =1025 - 1150 MHz PIN = 400mW VCE =35V 4 ----------- --- Pulse Width = 10 µs Duty Cycle = 1% Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct. ------1.0 120 --- V V V mA --- W MS2205 PACKAGE MECHANICAL DATA Microsemi reserves the right to change, without notice, the specifications and information contained herein Visit our website at www.microsemi.com or contact our factory direct.