PD - 93763
IRF7326D2
FETKY MOSFET / Schottky Diode
●
●
●
●
●
●
Co-packaged HEXFET® Power MOSFET
and Schottky Diode
Ideal For Buck Regulator Applications
P-Channel HEXFET
Low VF Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
1
8
K
A
2
7
K
S
3
6
D
G
4
5
D
A
VDSS = -30V
RDS(on) = 0.10Ω
Schottky Vf = 0.52V
Top Vie w
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
S O -8
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
dv/dt
TJ, TSTG
Continuous Drain Current ➃
Pulsed Drain Current ➀
Power Dissipation ➃
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
Maximum
Units
-3.6
-2.9
-29
2.0
1.3
16
± 20
-5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Junction-to-Ambient ➃
Maximum
Units
62.5
°C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ ISD ≤ -1.8A, di/dt ≤ -90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
1
8/19/99
IRF7326D2
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-30
—
—
-1.0
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
0.073
0.13
—
—
—
—
—
—
—
—
—
11
17
25
18
440
200
93
Max. Units
Conditions
—
V
V GS = 0V, ID = -250µA
0.10
VGS = -10V, ID = -1.8A
Ω
0.16
VGS = -4.5V, ID = -1.5A
—
V
VDS = VGS, ID = -250µA
—
S
VDS = -24V, ID = -1.8A
-1.0
VDS = -24V, VGS = 0V
µA
-25
VDS = -24V, VGS = 0V, TJ = 55°C
100
VGS = -20V
nA
-100
V GS = 20V
25
ID = -1.8A
2.9
nC
VDS = -24V
9.0
VGS = -10V (see figure 6) ➂
—
VDD = -15V
—
ID = -1.8A
ns
—
RG = 6.0Ω
—
R D = 8.2Ω ➂
—
VGS = 0V
—
pF
VDS = -25V
—
ƒ = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode)
VSD
Body Diode Forward Voltage
trr
Reverse Recovery Time (Body Diode)
Qrr
Reverse Recovery Charge
Min. Typ. Max. Units
—
—
-2.5
A
—
—
-29
—
—
-1.0
V
— 53
80
ns
— 66
99
nC
Conditions
TJ = 25°C, IS = -1.8A, VGS = 0V
TJ = 25°C, IF = -1.8A
di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
If (av)
ISM
Parameter
Max. Average Forward Current
Max. peak one cycle Non-repetitive
Surge current
Max. Units
2.8
A
1.8
200
20
A
Conditions
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Vfm
Parameter
Max. Forward voltage drop
Irm
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
Max. Units
0.57
0.77
V
0.52
0.79
0.30
mA
37
310 pF
4900 V/µs
Conditions
If = 3.0, Tj = 25°C
If = 6.0, Tj = 25°C
If = 3.0, Tj = 125°C
If = 6.0, Tj = 125°C .
Vr = 30V
Tj = 25°C
Tj = 125°C
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated Vr
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
www.irf.com
IRF7326D2
Power Mosfet Characteristics
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
10
-I D , D rain-to-S ource C urrent (A)
-ID , D rain-to-S ource C urrent (A )
TOP
-4.5V
2 0µ s P U L S E W ID TH
TJ = 25 °C
A
1
0.1
1
10
10
-4.5V
2 0µ s P U L S E W ID TH
T J = 15 0°C
1
100
0.1
1
-VD S , D rain-to-S ource V oltage (V )
Fig 2. Typical Output Characteristics
2.0
R D S (o n) , D rain-to -S ource O n R e sistance
(N orm alized)
-I D , D ra in -to-Sou rce C urrent (A )
100
TJ = 2 5 °C
T J = 1 5 0°C
10
V D S = -1 5 V
2 0µ s P U L S E W ID TH
4
5
6
7
8
9
-V G S , G ate -to-Source Volta ge (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
A
100
-V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
1
10
10
A
I D = -3 .0A
1.5
1.0
0.5
VG S = -1 0V
0.0
-60
-40
-20
0
20
40
60
80
100 120
140 160
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
A
IRF7326D2
Power Mosfet Characteristics
1000
C , C apacitanc e (pF )
800
600
=
=
=
=
20
0V ,
f = 1M H z
Cg s + C gd , Cds S H O R TE D
C gd
C ds + C gd
-V G S , G a te-to-S ou rc e V o ltag e (V )
V GS
C iss
C rs s
C oss
C iss
C o ss
400
C rss
200
0
10
16
12
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 12
0
A
1
I D = -3.0A
V D S = -24 V
100
0
-VD S , Drain -to -S ource V oltage (V )
5
10
15
20
A
25
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-II D , Drain Current (A)
-I S D , Reverse D ra in Cu rre nt (A )
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
TJ = 1 5 0°C
TJ = 25 °C
1
VG S = 0 V
0.1
0.0
0.3
0.6
0.9
1.2
-VS D , S ource-to-D rain Vo ltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
1.5
100us
10
1ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
1
10ms
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
IRF7326D2
Power Mosfet Characteristics
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
P DM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.50
0.40
0.30
VGS = -4.5V
0.20
VGS = -10V
0.10
0.00
0
2
4
6
8
10
12
-I D , Drain Current (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
www.irf.com
14
R DS (on), Drain-to-Source On Resistance ( Ω )
R DS (on), Drain-to-Source On Resistance ( Ω )
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.14
0.12
0.10
ID = -3.6A
0.08
0.06
4
6
8
10
12
14
16
-VGS , Gate-to-Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5
IRF7326D2
Schottky Diode Characteristics
100
100
T J = 150°C
Reverse Current - IR (mA)
10
T J = 1 50 °C
125°C
100°C
1
75°C
50°C
0.1
25°C
0.01
A
0.001
T J = 1 25 °C
0
5
10
15
20
25
30
Reverse Voltage - V R (V)
T J = 2 5 °C
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse
Voltage
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
( )
Forward Voltage Drop - VF (V)
Fig. 12 - Typical Forward Voltage Drop
Characteristics
A llow ab le A m bient Tem pe ra ture - (°C )
In sta n ta n e ou s Fo rw a rd Cu rren t - I F (A )
10
160
V r = 8 0 % R ated
R t hJA = 6 2.5° C /W
Sq uare wave
140
120
100
DC
80
60
D
D
D
D
D
40
20
= 3/4
= 1/2
=1 /3
= 1/4
= 1/5
A
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Av era ge F orw ard C urrent - I F(AV ) (A )
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
www.irf.com
IRF7326D2
SO-8 Package Details
D IM
D
-B -
5
E
-A -
5
θ
8
7
6
5
1
2
3
4
e
6X
H
0.2 5 (.0 10 )
M
A
A M
θ
e1
-C-
0 .10 (.00 4)
0 .25 (.01 0)
L
8X
A1
B 8X
6
C
8X
M C A S B S
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
K x 45 °
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
Part Marking
(IRF7101 example )
D A T E C O D E (Y W W )
Y = L A S T D IG IT O F T H E Y E A R
a
W W = W EEK
312
IN T E R N A T IO N A L
F 7 10 1
R E C T IF IE R
L OG O
TOP
PART NUM BER
XX X X
W AFER
L OT C ODE
(L A S T 4 D IG IT S )
www.irf.com
BOTTOM
7
IRF7326D2
Tape and Reel
T E R M IN A L N U M B E R 1
12 .3 ( .484 )
11 .7 ( .461 )
8.1 ( .31 8 )
7.9 ( .31 2 )
F E E D D IR E C T IO N
N OTE S :
1 . C ON TR O LL IN G D IM E N S ION : M IL LIM E TE R.
2 . A L L D IM E N S ION S A RE S H O W N IN M IL L IM E TE R S (INC H E S ).
3 . O U TL IN E C O N FO R M S TO E IA -4 81 & E IA -54 1 .
33 0.00
(12 .992 )
M AX .
14.4 0 ( .5 66 )
12.4 0 ( .4 88 )
NOTES :
1. C O N T R O LLIN G D IM E N S IO N : M ILL IM E T E R .
2. O U T LIN E C O N F O R M S T O E IA -481 & E IA -541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
8/99
8
www.irf.com