PHILIPS UBA1710M

INTEGRATED CIRCUITS
DATA SHEET
UBA1710M
Modulator for GaAs power
amplifiers
Product specification
Supersedes data of 1997 Feb 18
File under Integrated Circuits, IC17
1997 Oct 17
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
FEATURES
GENERAL DESCRIPTION
• Power MOS modulators for control of GaAs power
amplifier drain voltage
The UBA1710M integrates the functions required to
operate the GaAs Power Amplifiers (PAs) from the
CGY20xx family which are intended for GSM and DCS
applications.
• Power control loop amplifier and MOS driver
• Voltage tripler for supply of MOS driver
It includes a negative supply for PA gate biasing and most
of the functions required to implement power control so
that only a very few external component are required.
The power control section integrates two power MOS
devices for control of the PA drain voltages, an MOS driver
and a feedback loop amplifier. The MOS driver is supplied
from an on-chip voltage tripler.
• Positive-to-negative DC converter for GaAs power
amplifier gate biasing.
APPLICATIONS
• Control of GaAs power amplifiers for GSM and DCS
hand-held transceivers.
QUICK REFERENCE DATA
PARAMETER(1)
SYMBOL
MIN.
4.2
TYP.
4.8
MAX.
7.5
UNIT
VCC
analog supply voltage
V
VDD
digital supply voltage
4.2
4.8
7.5
V
ICC + IDD
peak supply current in power-up mode
−
12
−
mA
Tamb
operating ambient temperature
−20
−
+85
°C
Note
1. For conditions, see Chapter “Characteristics”.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
UBA1710M
1997 Oct 17
NAME
DESCRIPTION
VERSION
SSOP20
plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
2
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
BLOCK DIAGRAM
handbook, full pagewidth
TC1N TC1P TC2N TC2P
VP
10
11
6
8
9
STB
D1A
S1B
S1A
D2
S2
2
20
VOLTAGE TRIPLER
D1B
NC3N
NC3P
VN
1
3
NEGATIVE DC-DC 19
CONVERTER
CLOCK
Rext
16
15
UBA1710M
POWER MOS 1
14
13
POWER
MANAGEMENT
BUFFER
18
17
POWER MOS 2
4
7
5
12
VCC
VDD
GND
BUFI
MGG536
Fig.1 Block diagram.
PINNING
SYMBOL
PIN
DESCRIPTION
NC3P
1
charge pump tank capacitor
NC3N
2
charge pump tank capacitor
VN
3
negative bias voltage
VCC
4
analog supply voltage
GND
5
ground
TC1N
6
charge pump tank capacitor
VDD
7
TC1P
handbook, halfpage
NC3P
1
20 STB
NC3N
2
19 Rext
VN
3
18 D2
digital supply voltage
VCC
4
17 S2
8
charge pump tank capacitor
GND
5
TC2N
9
charge pump tank capacitor
TC2P
10
charge pump tank capacitor
VP
11
positive tripler voltage
BUFI
12
buffer input
S1A
13
S1B
16 D1B
UBA1710M
TC1N
6
15
D1A
VDD
7
14
S1B
TC1P
8
13
S1A
power MOS 1 source A
TC2N
9
12
BUFI
14
power MOS 1 source B
TC2P 10
D1A
15
power MOS 1 drain A
D1B
16
power MOS 1 drain B
S2
17
power MOS 2 source
D2
18
power MOS 2 drain
Rext
19
external resistance for VN
STB
20
standby input (active HIGH)
1997 Oct 17
11 VP
MGG535
Fig.2 Pin configuration.
3
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
The standard value is typically −2 V, without any external
resistor connected. The other one is a voltage tripler and
is required to supply the MOS driver. The driver is required
to raise the MOS gate voltage well above the battery
voltage in order to open the MOS switches
(‘high side’ driver).
FUNCTIONAL DESCRIPTION
Power control section
Power control for GaAs PAs from the CGY20xx family is
achieved by varying the drain voltage. This is achieved
with the UBA1710M by means of the two power MOS
devices integrated on-chip. They enable separate control
of the PA output stage from the pre-amplifier stages.
They have a very low ‘on’ resistance for low drop voltage
at high RF output power.
These DC-DC converters are operated at a typical
frequency of 600 kHz supplied by an internal oscillator.
Five external capacitors with a typical value of 0.1 µF
(0603 SMD) are required to operate these converters.
The MOS devices are driven by a buffer. The buffer
amplifier, in association with power MOS, is included in a
feedback loop to exhibit a high cut-off frequency (3 MHz)
over the whole control dynamic range. This buffer allows
fast switching of the MOS in accordance with GSM power
ramping requirements.
Power management
The power management disables the PA drain voltage and
prevents the PA from burnout if drain voltage is supplied
before the negative gate voltage is available.
Standby mode
DC-DC converters
An additional feature includes a standby mode, reducing
the current consumption to a maximum value of 1 µA.
One DC-DC converter is required to provide negative gate
biasing to the GaAs PA.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VCC
analog supply voltage
−0.5
+9.0
V
VDD
digital supply voltage
−0.5
+9.0
V
VI
DC input voltage
all pins (except BUFI)
−0.5
+9.0
V
pin BUFI
−0.5
+5.0
V
II
DC current into any signal pin
−10
+10
mA
Ptot
total power dissipation
−
0.65
W
Tstg
storage temperature
−65
+150
°C
Tamb
operating ambient temperature
−20
+85
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
1997 Oct 17
PARAMETER
thermal resistance from junction to ambient
4
VALUE
UNIT
100
K/W
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
CHARACTERISTICS
VCC = VDD = 4.8 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
ICC + IDD
Istb
peak supply current
standby current
power-up mode; PA on
−
12
−
mA
power-down mode; PA off
−
5
−
mA
standby mode
−
0.1
1
µA
IDS = 1.3 A
−
0.18
−
Ω
IDS = 0.4 A
−
0.5
−
Ω
−
600
−
kHz
Power MOS 1
RDSon1
on resistance
Power MOS 2
RDSon2
on resistance
Clock circuit
fclk
clock frequency
Voltage tripler
VPo
output voltage
with IPo = 2 mA
11.3
11.8
12.3
V
VR(p-p)
amplitude ripple
(peak-to-peak value)
with IPo = 2 mA;
C1 = C2 = 100 nF; CP = 100 nF
−
20
−
mV
ton
turn-on time
−
100
−
µs
Negative DC/DC converter
VNo
output voltage
with INo = 250 µA; Rext = 470 kΩ
−1.5
−1.8
−2.0
V
VR(p-p)
amplitude ripple
(peak-to-peak value)
with INo = 250 µA; C3 = 100 nF;
CN = 100 nF
−
2
−
mV
ton
turn-on time
−
280
−
µs
MOS buffer amplifier
VIL
LOW level input voltage
−
1.2
−
V
VIH
HIGH level input voltage
−
3.4
−
V
tsw
switching time from 0 to 4.5 V
−
1
−
µs
1997 Oct 17
2 Ω load at MOS outputs
5
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
APPLICATION INFORMATION
handbook, full pagewidth
C1
CP
C2
TC1N TC1P TC2N TC2P VP
10
11
8
9
STB
6
Vbat
VOLTAGE TRIPLER
CN
C3
NC3N NC3P VN
2
1
3
20
CLOCK
NEGATIVE DC-DC 19 Rext
CONVERTER
D1B 16
D1A 15
UBA1710M
POWER MOS 1
S1B 14
S1A 13
POWER
MANAGEMENT
BUFFER
D2 18
S2 17
POWER MOS 2
4
VCC
PA input
7
VDD
5
12
GND
BUFI
PA output
PA
MGG537
Fig.3 Application diagram.
1997 Oct 17
6
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
D
SOT266-1
E
A
X
c
y
HE
v M A
Z
11
20
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
10
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0
1.4
1.2
0.25
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
6.6
6.2
1.0
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10
0o
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
90-04-05
95-02-25
SOT266-1
1997 Oct 17
EUROPEAN
PROJECTION
7
o
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
If wave soldering cannot be avoided, the following
conditions must be observed:
SOLDERING
Introduction
• A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
• The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1).
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Maximum permissible solder temperature is 260 °C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150 °C within
6 seconds. Typical dwell time is 4 seconds at 250 °C.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300 °C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320 °C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45 °C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
1997 Oct 17
8
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Oct 17
9
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
NOTES
1997 Oct 17
10
Philips Semiconductors
Product specification
Modulator for GaAs power amplifiers
UBA1710M
NOTES
1997 Oct 17
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
437027/1200/03/pp12
Date of release: 1997 Oct 17
Document order number:
9397 750 02955