PHILIPS LWE2010S

DISCRETE SEMICONDUCTORS
DATA SHEET
LWE2010S
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
LWE2010S
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common emitter class A
selective amplifier.
MODE OF
OPERATION
f
(GHz)
VCE
(V)
IC
(mA)
PL1
(W)
Gpo
(dB)
2.3
18
110
≥0.8
≥8
class A (CW)
ZI/ZL
(Ω)
see Figs 6
and 7
PINNING - SOT446A
PIN
DESCRIPTION
1
collector
2
base
3
emitter connected to flange
Common emitter class A power
amplifiers at frequencies up to
2.3 GHz.
handbook, halfpage
1
DESCRIPTION
c
NPN silicon planar epitaxial
microwave power transistor in a
SOT446A metal ceramic flange
package, with emitter connected to
flange.
3
b
e
2
MAM313
Fig.1 Simplified outline and symbol.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
40
V
VCER
collector-emitter voltage
RBE = 250 Ω
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
250
mA
Ptot
total power dissipation
−
4.8
W
Tstg
storage temperature
−65
+200
°C
Tj
operating junction temperature
−
200
°C
Tsld
soldering temperature
−
235
°C
Tmb = 75 °C
t ≤ 10 s; note 1
Note
1. Up to 0.1 mm from ceramic.
MGA249
MGA250
6
handbook, halfpage
1
handbook, halfpage
Ptot
(W)
IC
(A)
4
10−1
2
(1)
10−2
1
(2)
10
VCE (V)
0
−50
102
Tmb ≤ 75 °C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE ≤ 250 Ω.
50
100
150
200
250
Tmb (oC)
Ptot max = 4.8 W.
Fig.3
Fig.2 DC SOAR.
1997 Feb 19
0
3
Maximum power dissipation derating as a
function of mounting base temperature.
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting base Tj = 75 °C
22
K/W
Rth mb-h
thermal resistance from mounting base to heatsink note 1
2
K/W
Note
1. See “Mounting recommendations in the General part of handbook SC15”.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
CONDITIONS
collector cut-off current
MIN.
MAX.
UNIT
VCB = 20 V; IE = 0
−
75
µA
VCB = 40 V; IE = 0
−
500
µA
nA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
−
200
hFE
DC current gain
VCE = 5 V; IC = 110 mA
15
150
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C in a common emitter class A selective amplifier.
MODE OF OPERATION
Class A (CW); note 1
f
(GHz)
VCE
(V)
IC
(mA)
PL1
(W)
Gpo
(dB)
ZI
(Ω)
ZL
(Ω)
2.3
18
110
≥0.8;
typ. 0.9
≥8;
typ. 9
5.2 + j 16.5
7.5 + j 8.75
Note
1. In narrowband test circuit shown in Fig.4.
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
30 mm
handbook, full pagewidth
1
5
2.5 (3x)
30 mm
4.5
8.5
10
5
5
3
1
3
40 mm
40 mm
4.5
0.6
3
3
4
9
MBC717
C1
handbook, full pagewidth
C2
L2
L1
input
output
C4
C3
MBC718
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.4 Prematching test circuit board.
1997 Feb 19
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
List of components (see Fig.4)
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
L1
3 turns 0.2 mm copper wire with ferrite bead
int. dia. 2 mm
L2
5 turns 0.5 mm copper wire
int. dia. 2 mm
C1, C2
feedthrough bypass capacitor
C3, C4
DC block capacitor
Erie, ref. 1214-001
100 pF
MGA251
handbook,1.2
halfpage
PL
(W)
0.8
0.4
0
0
0.05
0.1
0.15
Pi (W)
0.2
f = 2.3 GHz; VCE = 18 V; IC = 110 mA (regulated).
Fig.5 Load power as a function of input power.
1997 Feb 19
CATALOGUE NO.
6
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
1
handbook, full pagewidth
0.5
2
2.3 GHz
0.2
2 GHz
5
Zi
10
+j
0.2
0
0.5
1
2
5
10
∞
–j
10
5
0.2
2
0.5
PL1 = 0.8 W;
VCE = 18 V;
ZO = 50 Ω;
IC = 110 mA.
1
MGA253
Fig.6 Input impedance as a function of frequency associated with optimum load impedances.
1
handbook, full pagewidth
0.5
0.2
ZL
2
5
2 GHz
2.3 GHz
10
+j
0
0.2
0.5
1
2
5
10
∞
–j
10
5
0.2
PL1 = 0.8 W;
VCE = 18 V;
ZO = 50 Ω;
IC = 110 mA.
2
0.5
1
MGA252
Fig.7 Optimum load impedance as a function of frequency; typical values.
1997 Feb 19
7
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
PACKAGE OUTLINE
O 4.3
handbook, full pagewidth
0.1
2.2
1.7
2.3
3
O 5.8
seating
plane
0.76
1
9.4
max
18.8
min
2
MBC665
2.9
Dimensions in mm.
Fig.8 SOT446A.
1997 Feb 19
8
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 19
9
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
NOTES
1997 Feb 19
10
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2010S
NOTES
1997 Feb 19
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 19
Document order number:
9397 750 01713