APTGL90DDA120T3G Dual Boost chopper Trench + Field Stop IGBT4 Power module VCES = 1200V IC = 90A @ Tc = 80°C Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction 13 14 CR2 CR1 22 7 23 8 Q1 Features Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated - Symmetrical design Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring Q2 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Easy paralleling due to positive TC of VCEsat Each leg can be easily paralleled to achieve a single boost of twice the current capability RoHS compliant Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 110 90 150 ±20 385 150A @ 1150V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGL90DDA120T3G – Rev 1 October, 2012 Absolute maximum ratings APTGL90DDA120T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Zero Gate Voltage Collector Current ICES VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V ; VCE = 1200V VGE =15V Tj = 25°C IC = 75A Tj = 150°C VGE = VCE, IC = 3 mA VGE = 20 V, VCE = 0V Min Typ 5 1.85 2.25 5.8 Test Conditions Min Typ Max 250 2.25 Unit µA 6.5 600 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data VGE = 0V VCE = 25V f = 1MHz VGE= ±15V ; VCE=600V IC=75A Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A RG = 2.2 Inductive Switching (150°C) VGE = ±15V VBus = 600V IC = 75A RG = 2.2 TJ = 25°C VGE = ±15V VBus = 600V TJ = 150°C IC = 75A TJ = 25°C RG = 2.2 TJ = 150°C VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 4.4 0.29 0.24 nF 0.57 µC 130 20 300 ns 45 150 35 ns 350 80 3.3 8.5 4.2 7.2 mJ 300 A mJ Chopper diode ratings and characteristics IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions VR=1200V IF = 100A IF = 150A IF = 100A IF = 100A VR = 800V di/dt =200A/µs Min 1200 Tj = 25°C Tj = 125°C Tc = 80°C Typ 100 500 Tj = 125°C 100 2.4 2.7 1.8 Tj = 25°C 385 Tj = 125°C Tj = 25°C Tj = 125°C 480 1055 5240 www.microsemi.com Max Unit V µA A 3 V ns nC 2-6 APTGL90DDA120T3G – Rev 1 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTGL90DDA120T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ IGBT Diode To heatsink M4 4000 -40 -40 -40 2 Max 0.39 0.55 Unit °C/W V 175 125 100 3 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T T 25 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGL90DDA120T3G – Rev 1 October, 2012 SP3 Package outline (dimensions in mm) APTGL90DDA120T3G Typical Performance Curve Output Characteristics (VGE=15V) 150 Output Characteristics 150 100 100 TJ=150°C IC (A) IC (A) VGE=19V TJ=25°C 75 VGE=15V 75 50 50 25 25 0 VGE=9V 0 0 1 2 VCE (V) 3 4 0 Transfert Characteristics 150 20 E (mJ) 75 2 VCE (V) VCE = 600V VGE = 15V RG = 2.2 Ω TJ = 150°C 25 100 1 3 4 Energy losses vs Collector Current 30 TJ=25°C 125 IC (A) TJ = 150°C 125 125 Eon 15 10 50 TJ=150°C Eoff 5 25 0 0 5 6 7 8 9 10 11 12 0 13 25 50 75 100 125 150 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 20 160 Eon 120 VCE = 600V VGE =15V IC = 75A TJ = 150°C 12 IC (A) E (mJ) 16 Eoff 8 80 VGE=15V TJ=150°C RG=2.2 Ω 40 4 0 0 5 10 15 20 Gate Resistance (ohms) 25 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.9 IGBT 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-6 APTGL90DDA120T3G – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.4 APTGL90DDA120T3G Forward Characteristic of diode 200 VCE=600V D=50% RG=2.2 Ω TJ=150°C Tc=75°C 100 80 IF, Forward Current (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 60 40 ZCS 20 Hard switching ZVS 175 125 100 40 75 TJ=25°C 50 25 0 0 20 TJ=125°C 150 60 80 100 0 120 0.5 1 1.5 2 2.5 3 VF, Anode to Cathode Voltage (V) IC (A) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.4 0.3 0.9 Diode 0.7 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 5-6 APTGL90DDA120T3G – Rev 1 October, 2012 Thermal Impedance (°C/W) 0.6 APTGL90DDA120T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 6-6 APTGL90DDA120T3G – Rev 1 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.