IRF IRFZ44EL

PD - 9.1714
IRFZ44ES/L
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Surface Mount (IRFZ44ES)
Low-profile through-hole (IRFZ44EL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 60V
RDS(on) = 0.023Ω
G
ID = 48A
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44EL) is available for low-profile applications.
D 2 Pak
T O -26 2
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V…
Continuous Drain Current, VGS @ 10V…
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
48
34
192
110
0.71
± 20
220
29
11
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.4
–––
62
°C/W
1
11/18/97
IRFZ44ES/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
60
–––
–––
2.0
15
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.063
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
60
70
70
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
–––
7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1360
420
160
V(BR)DSS
DV(BR)DSS/DTJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA…
0.023
Ω
VGS = 10V, ID = 29A „
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 30V, ID = 29A…
25
VDS = 60V, VGS = 0V
µA
250
VDS = 48V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
60
ID = 29A
13
nC VDS = 48V
23
VGS = 10V, See Fig. 6 and 13 „…
–––
VDD = 30V
–––
ID = 29A
ns
–––
RG = 15Ω
–––
RD = 1.1Ω, See Fig. 10 „…
Between lead,
––– nH
and center of die contact
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
IS
I SM
VSD
t rr
Q rr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
48
––– –––
showing the
A
G
integral reverse
––– ––– 192
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 29A, VGS = 0V „
––– 69 104
ns
TJ = 25°C, IF = 29A
––– 177 266
nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 520µH
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRFZ44E data and test conditions
RG = 25Ω, IAS = 29A. (See Figure 12)
ƒ ISD ≤ 29A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
2
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IRFZ44ES/L
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
10
4.5V
4.5V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 25 ° C
100
TJ = 175 ° C
10
V DS = 25V
20µs PULSE WIDTH
5
6
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
4
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
ID = 48A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFZ44ES/L
2500
20
2000
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
Ciss
1500
Coss
1000
Crss
500
VDS = 48V
VDS = 30V
16
12
8
4
1
10
0
100
10
20
30
40
50
60
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
100 T = 175 ° C
J
10us
100
10
TJ = 25 ° C
1
0.5
100us
10
1ms
1.0
1.5
2.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.5
10ms
TC = 25 ° C
TJ = 175 ° C
Single Pulse
V GS = 0 V
VSD ,Source-to-Drain Voltage (V)
4
ID = 29
1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFZ44ES/L
RD
V DS
50
50
VGS
D.U.T.
RG
40
40
+
V
DD
I D , Drain Current (A)
I D , Drain Current (A)
-
10V
30
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
20
Fig 10a. Switching Time Test Circuit
VDS
10
10
0
90%
0
25
25
50
50
75
100
125
150
125
° C)
TC ,75Case 100
Temperature
(150
TC , Case Temperature ( ° C)
175
175
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
P DM
0.05
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
L
VDS
D R IV E R
D .U .T
RG
+
- VD D
IA S
20V
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRFZ44ES/L
500
TOP
400
BOTTOM
ID
12A
21A
29A
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
IG
Charge
Fig 13a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFZ44ES/L
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFZ44ES/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
1.40 (.055)
M A X.
-A-
1.32 (.052)
1.22 (.048)
2
1.78 (.070)
1.27 (.050)
1
10.16 (.400)
REF.
-B-
4.69 (.185)
4.20 (.165)
6.47 (.255)
6.18 (.243)
3
15.4 9 (.610)
14.7 3 (.580)
2.79 (.110)
2.29 (.090)
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
3X
1.40 (.055)
1.14 (.045)
5.08 (.200)
0.55 (.022)
0.46 (.018)
0.93 (.037)
3X
0.69 (.027)
0.25 (.010)
M
8.8 9 (.350)
REF.
1.39 (.055)
1.14 (.045)
B A M
M IN IM U M R E C O M M E N D E D F O O TP R IN T
11.43 (.450)
N O TE S :
1 D IM E N S IO N S A F T E R S O LD E R D IP .
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
LE A D A S S IG N M E N TS
1 - G A TE
2 - D R A IN
3 - SOURCE
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.082)
2X
2.54 (.100)
2X
Part Marking Information
D2Pak
IN TE R N A T IO N A L
R E C TIF IE R
LOGO
ASSEMBLY
LOT CODE
8
A
PART NUMBER
F530S
9246
9B
1M
D A TE C O D E
(Y Y W W )
YY = YEAR
W W = W EEK
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IRFZ44ES/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
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9
IRFZ44ES/L
Tape & Reel Information
D2Pak
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.1 6 1 )
3 .9 0 (.1 5 3 )
F E E D D IR E C TIO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )
TR L
1 0 .9 0 (.4 2 9 )
1 0 .7 0 (.4 2 1 )
1 .7 5 (.0 6 9 )
1 .2 5 (.0 4 9 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .1 0 (.6 3 4 )
1 5 .9 0 (.6 2 6 )
F E E D D IR E C T IO N
1 3.5 0 (.5 32 )
1 2.8 0 (.5 04 )
2 7.4 0 (1 .07 9)
2 3.9 0 (.9 41 )
4
330.00
(14.173)
M A X.
N O TES :
1. C O M F O R M S T O E IA -41 8 .
2. C O N T R O L LIN G D IM E N S IO N : M ILL IM E T E R .
3. D IM E N S IO N M E A S U R E D @ H U B .
4. IN C L U D E S F L A N G E D IS T O R T IO N @ O U T E R E D G E .
6 0.0 0 (2 .3 6 2)
M IN .
26 .40 (1.039)
24 .40 (.961)
3
3 0.4 0 (1 .1 97 )
MAX.
4
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
11/97
10
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