APTC60DSKM35T3G Dual buck chopper Super Junction MOSFET Power Module Application AC and DC motor control Switched Mode Power Supplies 13 14 Q1 Q2 Features 11 18 22 VDSS = 600V RDSon = 35m max @ Tj = 25°C ID = 72A @ Tc = 25°C 7 19 10 23 CR1 29 8 30 CR2 31 15 32 16 R1 28 27 26 25 23 22 Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a single buck of twice the current capability RoHS Compliant 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 8 - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 72 54 288 ±20 35 416 20 1 1800 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-7 APTC60DSKM35T3G – Rev 2 October, 2012 Symbol VDSS APTC60DSKM35T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 14 5.13 0.42 Max 40 375 35 3.9 ±150 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 72A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy nF 518 nC 58 222 21 Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 72A RG = 2.5 30 ns 283 84 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω 1340 µJ 1960 2192 µJ 2412 Chopper diode ratings and characteristics IRM Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions VR=600V IF = 80A VGE = 0V IF = 80A VR = 300V di/dt =4500A/µs www.microsemi.com Min 600 Typ Tj = 25°C Tj = 125°C Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 80 1.45 1.35 95 Tj = 125°C 115 Tj = 25°C 5.2 Tj = 125°C 8 Max 350 600 Unit V µA A V ns µC 2-7 APTC60DSKM35T3G – Rev 2 October, 2012 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTC60DSKM35T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Diode To heatsink M4 4000 -40 -40 -40 2 Max 0.3 0.8 Unit °C/W V 150 125 100 3 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-7 APTC60DSKM35T3G – Rev 2 October, 2012 SP3 Package outline (dimensions in mm) APTC60DSKM35T3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics VGS=15&10V 6.5V 6V 5.5V 5V 4.5V VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 240 200 160 120 4V 80 TJ=125°C 40 TJ=25°C TJ=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 36A 1.05 VGS=10V VGS=20V 1 7 DC Drain Current vs Case Temperature 80 RDS(on) vs Drain Current 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 0.9 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4-7 APTC60DSKM35T3G – Rev 2 October, 2012 RDS(on) Drain to Source ON Resistance ID, Drain Current (A) 280 ID, DC Drain Current (A) ID, Drain Current (A) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 100 100 µs limited by RDSon 1 ms Single pulse TJ=150°C TC=25°C 10 0.6 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Ciss Coss 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 72A 14 ID=72A TJ=25°C 12 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 5-7 APTC60DSKM35T3G – Rev 2 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DSKM35T3G APTC60DSKM35T3G Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=2.5Ω TJ=125°C L=100µH 200 150 100 50 VDS=400V RG=2.5Ω TJ=125°C L=100µH 100 80 tr and tf (ns) 60 40 tr 20 td(on) 0 0 0 20 40 60 80 100 120 0 20 40 ID, Drain Current (A) Switching Energy (mJ) Switching Energy (mJ) Eoff Eon 120 VDS=400V ID=72A TJ=125°C L=100µH 8 6 Eoff Eon 4 2 0 20 40 60 80 100 ID, Drain Current (A) 120 ZCS ZVS 100 80 VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C 5 10 15 20 25 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 120 0 Gate Resistance (Ohms) Operating Frequency vs Drain Current Frequency (kHz) 100 Switching Energy vs Gate Resistance 140 20 80 10 VDS=400V RG=2.5Ω TJ=125°C L=100µH 0 40 60 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 60 tf hard switching TJ=150°C 100 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 6-7 APTC60DSKM35T3G – Rev 2 October, 2012 td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60DSKM35T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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