APTC60DSKM70T1G VDSS = 600V RDSon = 70m max @ Tj = 25°C ID = 39A @ Tc = 25°C Dual Buck chopper Super Junction MOSFET Power Module Application AC and DC motor control Switched Mode Power Supplies Features Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Each leg can be easily paralleled to achieve a single buck of twice the current capability Low profile RoHS Compliant Pins 3/4 must be shorted together Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 39 29 160 ±20 70 250 20 1 1800 Unit V A V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTC60DSKM70T1G – Rev 1 October, 2012 Symbol VDSS APTC60DSKM70T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 39A VGS = VDS, ID = 2.7mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 7 2.56 0.21 Max 25 250 70 3.9 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 39A Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy nF 259 nC 29 111 21 Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 39A RG = 5 30 ns 283 84 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 39A, RG = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 39A, RG = 5Ω 670 µJ 980 1096 µJ 1206 Chopper diode ratings and characteristics VRRM IRM IF Test Conditions Min VR=600V DC Forward Current Tc = 80°C Diode Forward Voltage IF = 30A trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A VR = 400V di/dt =200A/µs www.microsemi.com 25 500 30 1.8 IF = 60A Unit V Tj = 25°C Tj = 125°C IF = 30A VF Max 600 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 2.2 Tj = 125°C 1.5 Tj = 25°C 25 Tj = 125°C 160 Tj = 25°C 35 Tj = 125°C 480 µA A 2.2 V ns nC 2–8 APTC60DSKM70T1G – Rev 1 October, 2012 Symbol Characteristic APTC60DSKM70T1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ CoolMOS Diode To heatsink M4 4000 -40 -40 -40 2 Max 0.5 1.2 Unit °C/W V 150 125 100 3 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT Typ 50 5 3952 4 Max Unit k % K % R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–8 APTC60DSKM70T1G – Rev 1 October, 2012 SP1 Package outline (dimensions in mm) APTC60DSKM70T1G Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 160 VGS=15&10V ID, Drain Current (A) 6.5V 6V 120 5.5V 80 5V 40 4.5V 4V 0 100 80 60 40 TJ=125°C 20 TJ=25°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 19.5A 1.05 VGS=10V VGS=20V 1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 40 RDS(on) vs Drain Current 1.1 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 0.95 0.9 35 30 25 20 15 10 5 0 0 10 20 30 40 50 60 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 4–8 APTC60DSKM70T1G – Rev 1 October, 2012 ID, Drain Current (A) 200 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 0.9 0.8 0.7 limited by RDSon 100 100 µs 10 0.6 Single pulse TJ=150°C TC=25°C 1 ms 10 ms 1 25 50 75 100 125 150 1 Ciss Coss 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 39A 2.5 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 14 ID=39A TJ=25°C 12 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 5–8 APTC60DSKM70T1G – Rev 1 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60DSKM70T1G APTC60DSKM70T1G Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=5Ω TJ=125°C L=100µH 200 150 100 50 VDS=400V RG=5Ω TJ=125°C L=100µH 100 tr and tf (ns) 80 60 40 tr 20 td(on) 0 0 0 10 20 30 40 50 60 70 0 10 20 ID, Drain Current (A) Switching Energy (mJ) Switching Energy (mJ) 50 60 70 Switching Energy vs Gate Resistance Eoff 1.5 Eon 1 0.5 40 5 VDS=400V RG=5Ω TJ=125°C L=100µH 2 30 ID, Drain Current (A) Switching Energy vs Current 2.5 Eoff 0 VDS=400V ID=39A TJ=125°C L=100µH 4 3 Eoff Eon 2 1 0 0 10 20 30 40 50 ID, Drain Current (A) 60 70 0 Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) 120 100 80 ZVS 60 hard VDS=400V switching D=50% RG=5Ω TJ=125°C TC=75°C 40 20 0 5 10 ZCS 15 20 25 30 ID, Drain Current (A) 5 10 15 20 25 30 35 40 45 50 Gate Resistance (Ohms) 140 Frequency (kHz) tf 35 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) www.microsemi.com 6–8 APTC60DSKM70T1G – Rev 1 October, 2012 td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60DSKM70T1G Typical chopper diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.4 1.2 0.9 1 0.7 0.8 0.5 0.6 0.3 0.4 0.1 0.05 0.2 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 100 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 TJ=125°C VR=400V 150 125 60 A 100 30 A 75 15 A 50 3.0 0 200 TJ=125°C VR=400V 60 A 1.0 30 A 15 A 0.5 0.0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge 1.5 600 800 1000 1200 IRRM vs. Current Rate of Charge 30 TJ=125°C VR=400V 25 60 A 20 15 30 A 15 A 10 5 0 0 200 -diF/dt (A/µs) 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 50 200 175 Duty Cycle = 0.5 TJ=175°C 40 150 IF(AV) (A) C, Capacitance (pF) 400 -diF/dt (A/µs) VF, Anode to Cathode Voltage (V) 125 100 75 50 30 20 10 25 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (°C) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 7–8 APTC60DSKM70T1G – Rev 1 October, 2012 IF, Forward Current (A) Trr vs. Current Rate of Charge 175 120 APTC60DSKM70T1G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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