APTC80TA15PG Triple phase leg Super Junction MOSFET Power Module VBUS3 G1 G3 G5 S3 S1 U G2 S2 0/VBUS1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control S5 W V G4 G6 S4 S6 0/VBUS2 0/VBUS3 Features • • • • Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 28 21 110 ±30 150 277 17 0.5 670 Unit V A V mΩ W A October 2012 VBUS2 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1–7 APTC80TA15PG – Rev 2 VBUS1 VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C APTC80TA15PG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 4507 2092 108 Max 50 375 150 3.9 ±150 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz pF 180 VGS = 10V VBus = 400V ID = 28A 22 nC 90 Inductive switching @125°C VGS = 15V VBus = 533V ID = 28A RG = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω 10 13 83 ns 35 486 µJ 278 850 µJ 342 Source - Drain diode ratings and characteristics Reverse Recovery Time Qrr Reverse Recovery Charge Min Tc = 25°C Tc = 80°C Typ 28 21 VGS = 0V, IS = - 28A IS = - 28A VR = 400V diS/dt = 200A/µs Max Unit A 1.2 6 V V/ns Tj = 25°C 550 ns Tj = 25°C 30 µC October 2012 trr Test Conditions X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 28A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–7 APTC80TA15PG – Rev 2 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery X APTC80TA15PG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 Typ Max 0.45 150 125 100 5 250 Unit °C/W V °C N.m g SP6-P Package outline (dimensions in mm) www.microsemi.com 3–7 APTC80TA15PG – Rev 2 October 2012 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTC80TA15PG Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 Single Pulse 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 VGS=15&10V 6.5V 60 50 6V 40 5.5V 30 5V 20 4.5V 10 80 60 40 TJ=25°C 20 TJ=125°C 4V TJ=-55°C 0 0 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 30 Normalized to VGS=10V @ 14A 1.3 ID, DC Drain Current (A) VGS=10V 1.2 VGS=20V 1.1 1 0.9 25 20 15 10 5 0 0.8 0 10 20 30 40 50 60 25 50 75 100 125 150 TC, Case Temperature (°C) ID, Drain Current (A) www.microsemi.com October 2012 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 4–7 APTC80TA15PG – Rev 2 ID, Drain Current (A) 70 ID, Drain Current (A) 100 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 VGS=10V ID= 14A 2.5 2.0 1.5 1.0 0.5 0.0 -50 TJ, Junction Temperature (°C) 100 150 1000 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 Maximum Safe Operating Area Threshold Voltage vs Temperature 1.2 1.0 0.9 0.8 100 0 50 100 0 1 1000 Coss 100 Crss 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=28A TJ=25°C 14 VDS=160V 12 VDS=400V 10 8 VDS=640V 6 4 2 0 0 40 80 120 160 200 Gate Charge (nC) October 2012 0 VGS, Gate to Source Voltage (V) Ciss 1ms Single pulse TJ=150°C TC=25°C 1 TC, Case Temperature (°C) 10000 100µs 100ms 150 Capacitance vs Drain to Source Voltage 100000 limited by RDSon 10 0.7 -50 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) www.microsemi.com 5–7 APTC80TA15PG – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80TA15PG APTC80TA15PG Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 VDS=533V RG=2.5Ω TJ=125°C L=100µH 60 40 tr and tf (ns) 30 20 td(on) 20 VDS=533V RG=2.5Ω TJ=125°C L=100µH 10 0 0 10 20 30 40 ID, Drain Current (A) 50 10 1200 Switching Energy (µJ) Eon 900 600 50 Eoff 300 VDS=533V ID=28A TJ=125°C L=100µH 2000 1500 Eon 1000 Eon Eoff 500 0 0 10 20 30 40 ID, Drain Current (A) 0 50 350 ZVS 300 250 200 Hard switching 150 100 VDS=533V D=50% RG=2.5Ω TJ=125°C TC=75°C ZCS 50 0 6 IDR, Reverse Drain Current (A) Operating Frequency vs Drain Current 400 5 10 15 20 Gate Resistance (Ohms) 25 Source to Drain Diode Forward Voltage 1000 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) 100 TJ=150°C 10 TJ=25°C 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 6–7 October 2012 Eon and Eoff (µJ) 2500 VDS=533V RG=2.5Ω TJ=125°C L=100µH 20 30 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 1500 Frequency (kHz) tr APTC80TA15PG – Rev 2 td(on) and td(off) (ns) td(off) 80 APTC80TA15PG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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