APTC90TAM60TPG Triple phase leg Super Junction MOSFET Power Module VDSS = 900V RDSon = 60mΩ max @ Tj = 25°C ID = 59A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • • • • • - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTC90TAM60TPG – Rev 1 October 2012 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge • RoHS Compliant Absolute maximum ratings Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 900 V 59 Tc = 25°C ID Continuous Drain Current A Tc = 80°C 44 IDM Pulsed Drain current 150 VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 60 mΩ PD Maximum Power Dissipation Tc = 25°C 462 W IAR Avalanche current (repetitive and non repetitive) 8.8 A EAR Repetitive Avalanche Energy 2.9 mJ EAS Single Pulse Avalanche Energy 1940 APTC90TAM60TPG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 900V VGS = 0V,VDS = 900V Min Typ 2.5 1000 50 3 Tj = 25°C Tj = 125°C VGS = 10V, ID = 52A VGS = VDS, ID = 6mA VGS = ±20 V, VDS = 0V Max 200 Unit 60 3.5 200 mΩ V nA Max Unit µA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 100V f = 1MHz Min Typ 13.6 0.66 nF 540 VGS = 10V VBus = 400V ID = 52A 64 nC 230 70 Inductive Switching (125°C) VGS = 10V VBus = 600V ID = 52A RG = 3.8Ω 20 ns 400 25 Inductive switching @ 25°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω Inductive switching @ 125°C VGS = 10V ; VBus = 600V ID = 52A ; RG = 3.8Ω 3 mJ 1.5 4.2 mJ 1.7 Source - Drain diode ratings and characteristics Reverse Recovery Time Qrr Reverse Recovery Charge Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 52A IS = - 52A Tj = 25°C VR = 400V Tj = 25°C diS/dt = 200A/µs 0.8 Max 59 44 1.2 Unit A V 920 ns 60 µC October 2012 trr Test Conditions www.microsemi.com 2–6 APTC90TAM60TPG – Rev 1 Symbol Characteristic Continuous Source current IS (Body diode) VSD Diode Forward Voltage APTC90TAM60TPG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 -40 -40 -40 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 Typ Max 0.27 150 125 100 5 250 Unit °C/W V °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T exp ⎢ B25 / 85 ⎜⎜ − ⎟⎟⎥ T T ⎝ 25 ⎠⎦ ⎣ See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com www.microsemi.com 3–6 APTC90TAM60TPG – Rev 1 October 2012 SP6-P Package outline (dimensions in mm) APTC90TAM60TPG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.3 0.9 0.25 0.7 0.2 0.15 0.5 0.1 0.3 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 6V 160 5V 80 0 0 5 10 15 VDS, Drain to Source Voltage (V) 20 Maximum Safe Operating Area 10 ms ID, DC Drain Current (A) 925 900 25 75 100 125 50 40 30 20 10 1 0 1 10 100 1000 25 VDS, Drain to Source Voltage (V) Ciss 10000 Coss 1000 100 Crss 10 1 0 50 75 100 125 TC, Case Temperature (°C) 150 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) 50 25 50 75 100 125 150 175 200 VDS, Drain to Source Voltage (V) www.microsemi.com 10 VDS=400V ID=52A TJ=25°C 8 October 2012 ID, Drain Current (A) 100 µs Single pulse TJ=150°C TC=25°C 950 DC Drain Current vs Case Temperature 60 limited by RDSon 10 975 TJ, Junction Temperature (°C) 1000 100 1000 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 4–6 APTC90TAM60TPG – Rev 1 ID, Drain Current (A) VGS=20, 8V BVDSS, Drain to Source Breakdown Voltage Breakdown Voltage vs Temperature 240 APTC90TAM60TPG VDS=600V D=50% RG=3.8Ω TJ=125°C TC=75°C 200 Hard switching 100 ZCS 0 20 25 30 35 40 45 50 2.5 2.0 1.5 1.0 0.5 25 ID, Drain Current (A) 6 Eon 4 Eoff 2 0 10 20 30 40 50 60 ID, Drain Current (A) 100 125 150 7 Switching Energy (mJ) Eon and Eoff (mJ) VDS=600V RG=3.8Ω TJ=125°C L=100µH 75 Switching Energy vs Gate Resistance Switching Energy vs Current 8 50 TJ, Junction Temperature (°C) 70 80 6 Eon 5 Eoff 4 3 VDS=600V ID=52A TJ=125°C L=100µH 2 1 0 0 5 10 15 20 Gate Resistance (Ohms) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 5–6 October 2012 300 3.0 APTC90TAM60TPG – Rev 1 Frequency (kHz) ZVS ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) Operating Frequency vs Drain Current 400 APTC90TAM60TPG DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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