APTCV40H60CT1G Full - Bridge CoolMOS & Trench + Field Stop® IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS™ Q2, Q4: VDSS = 600V ; ID = 36A @ Tc = 25°C Application 3 4 Solar converter Features Q3 Q1 CR1 2 5 CR3 6 1 Q2 Q4 7 9 8 11 10 NTC 12 Top switches : Trench + Field Stop IGBT® Bottom switches : CoolMOS™ Q2, Q4 CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged - Fast intrinsic diode Q1, Q3 Trench & Field Stop IGBT® - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current - SiC Schottky Diode (CR1, CR3) Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring High level of integration Pins 3/4 must be shorted together Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com All ratings @ Tj = 25°C unless otherwise specified www.microsemi.com 1 - 11 APTCV50H60CT1G – Rev 1 October, 2012 Benefits APTCV40H60CT1G 1. Top switches 1.1 Top Trench + Field Stop IGBT® characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A V W Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Test Conditions Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 3150 200 95 Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2 VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 50A Tj = 25°C RG = 8.2 Tj = 150°C 110 45 200 Tf Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance pF ns 40 120 50 250 ns 60 0.3 0.43 1.35 1.75 mJ mJ 0.85 www.microsemi.com °C/W 2 - 11 APTCV50H60CT1G – Rev 1 October, 2012 Symbol Characteristic APTCV40H60CT1G 1.2 Top SiC diode characteristics (CR1, CR3) Symbol Characteristic VRRM Test Conditions Min Tj = 25°C Tj = 125°C IRM Maximum Reverse Leakage Current VR=600V IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 100°C IF = 10A Tj = 25°C Tj = 175°C Diode Forward Voltage QC Total Capacitive Charge C Total Capacitance RthJC Max 50 100 10 1.6 2 200 1000 600 Maximum Peak Repetitive Reverse Voltage VF Typ Unit V IF = 10A, VR = 300V di/dt =500A/µs 14 f = 1MHz, VR = 200V 65 f = 1MHz, VR = 400V 50 Junction to Case Thermal resistance µA A 1.8 2.4 V nC pF 2.5 °C/W 2. Bottom switches 2.1 Bottom CoolMOS™ characteristics Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Max ratings 600 36 27 115 ±20 83 250 20 1 1800 Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Unit V A V m W A mJ Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V www.microsemi.com Typ Tj = 25°C Tj = 125°C 3 4 Max 100 5000 83 5 100 Unit µA m V nA 3 - 11 APTCV50H60CT1G – Rev 1 October, 2012 Symbol Characteristic APTCV40H60CT1G Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Crss Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Typ 7.2 0.041 Max Unit nF 250 VGS = 10V VBus = 300V ID = 36A nC 43 135 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 36A RG = 5 30 ns 240 52 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 36A ; RG = 5 Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 36A ; RG = 5 531 µJ 590 762 µJ 725 0.5 °C/W Max Unit Source - Drain diode ratings and characteristics Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25°C Tc = 80°C Typ 36 27 VGS = 0V, IS = - 36A IS = - 36A VR = 350V diS/dt = 100A/µs A 1.2 40 Tj = 25°C Tj = 125°C Tj = 25°C 210 350 2 Tj = 125°C 5.4 V V/ns ns µC www.microsemi.com 4 - 11 APTCV50H60CT1G – Rev 1 October, 2012 dv/dt numbers reflect the limitations of the circuit rather than the device itself. di/dt 100A/µs VR VDSS Tj 150°C IS - 36A APTCV40H60CT1G 3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K Min 4000 -40 -40 -40 2 Typ Max Unit V R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T 4. Package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 150* 125 100 3 80 °C N.m g Tj=175°C for Trench & Field Stop IGBT See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 5 - 11 APTCV50H60CT1G – Rev 1 October, 2012 5. SP1 Package outline (dimensions in mm) APTCV40H60CT1G 6. Top switches curves 6.1 Top Trench + Field Stop IGBT® typical performance curves Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=25°C 80 TJ = 150°C TJ=125°C 60 IC (A) IC (A) VGE=13V TJ=150°C 60 VGE=15V 40 40 20 20 TJ=25°C 0 0 0.5 1 1.5 VCE (V) VGE=9V 0 2 2.5 0 3 3.5 60 E (mJ) IC (A) 2.5 40 1 1.5 2 VCE (V) 2.5 VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 3 TJ=25°C 80 0.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 VGE=19V 80 TJ=125°C Eoff 2 1.5 1 TJ=150°C 20 TJ=25°C 0 0 5 6 7 Eon 0.5 8 9 10 11 0 12 20 40 Switching Energy Losses vs Gate Resistance 80 100 Reverse Bias Safe Operating Area 3 125 2.5 Eoff 100 IC (A) 2 E (mJ) 60 IC (A) VGE (V) 1.5 0.5 50 VCE = 300V VGE =15V IC = 50A TJ = 150°C 1 Eon 75 VGE=15V TJ=150°C RG=8.2Ω 25 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.8 0.6 0.9 0.7 0.5 0.4 0.2 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds www.microsemi.com 6 - 11 APTCV50H60CT1G – Rev 1 October, 2012 Thermal Impedance (°C/W) 1 APTCV40H60CT1G 6.2 Top SiC diode typical performance curves Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 3 2.5 0.9 2 0.7 1.5 0.5 1 0.3 0.1 0.5 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 200 TJ=25°C 15 TJ=75°C IR Reverse Current (µA) IF Forward Current (A) Reverse Characteristics Forward Characteristics 20 TJ=175°C 10 TJ=125°C 5 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) TJ=175°C 160 TJ=125°C 120 TJ=75°C 80 TJ=25°C 40 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage 400 300 250 200 150 100 50 0 1 10 100 VR Reverse Voltage 1000 www.microsemi.com 7 - 11 APTCV50H60CT1G – Rev 1 October, 2012 C, Capacitance (pF) 350 APTCV40H60CT1G 7. Bottom switches curves 7.1 Bottom CoolMOS™ typical performance curves Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 80 VGS=15&10V 50 ID, Drain Current (A) 6.5V 40 30 6V 20 5.5V 10 60 40 TJ=125°C 20 TJ=125°C TJ=25°C 0 0 0 1 2 3 4 5 VDS, Drain to Source Voltage (V) 6 0 Normalized to VGS=10V @ 18A 1.15 VGS=10V 1.1 1.05 1 2 4 6 8 VGS, Gate to Source Voltage (V) 10 DC Drain Current vs Case Temperature 40 RDS(on) vs Drain Current 1.2 ID, DC Drain Current (A) RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle VGS=20V 0.95 0.9 30 20 10 0 0 10 20 30 40 50 60 70 80 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 8 - 11 APTCV50H60CT1G – Rev 1 October, 2012 ID, Drain Current (A) 60 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 0.95 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.00 0.90 0.85 0.80 0.75 100 100 µs limited by RDSon 10 0.70 Single pulse TJ=150°C TC=25°C 1 ms 10 ms 1 25 50 75 100 125 150 1 Ciss Coss 1000 100 Crss 10 1 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 18A 2.5 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 14 ID=36A TJ=25°C 12 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 50 100 150 200 Gate Charge (nC) 250 300 9 - 11 APTCV50H60CT1G – Rev 1 October, 2012 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTCV40H60CT1G APTCV40H60CT1G Delay Times vs Current 300 VDS=400V RG=5Ω TJ=125°C L=100µH td(off) 250 60 200 tr and tf (ns) VDS=400V RG=5Ω TJ=125°C L=100µH 150 100 40 tr 20 50 td(on) 0 0 0 10 20 30 40 50 60 0 10 20 ID, Drain Current (A) 1 Eoff 0.8 Eon 0.6 50 60 Switching Energy vs Gate Resistance Switching Energy (mJ) Switching Energy (mJ) 1.2 40 4 VDS=400V RG=5Ω TJ=125°C L=100µH 1.4 30 ID, Drain Current (A) Switching Energy vs Current 1.6 0.4 0.2 0 VDS=400V ID=36A TJ=125°C L=100µH 3 Eoff 2 Eon 1 0 0 10 20 30 40 50 ID, Drain Current (A) 60 0 IDR, Reverse Drain Current (A) ZCS 120 ZVS 80 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 40 0 5 10 hard switching 15 20 25 30 ID, Drain Current (A) 20 30 40 50 Source to Drain Diode Forward Voltage 1000 Operating Frequency vs Drain Current 160 10 Gate Resistance (Ohms) 200 Frequency (kHz) tf 35 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 10 - 11 APTCV50H60CT1G – Rev 1 October, 2012 td(on) and td(off) (ns) Rise and Fall times vs Current 80 APTCV40H60CT1G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of Microsemi. Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or customers final application. User or customer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp Life Support Application Seller's Products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the Seller's Product could create a situation where personal injury, death or property damage or loss may occur (collectively "Life Support Applications"). Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations that Seller was negligent regarding the design or manufacture of the goods. www.microsemi.com 11 - 11 APTCV50H60CT1G – Rev 1 October, 2012 Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the new proposed specific part.