APTC60VDAM45T1G VDSS = 600V RDSon = 45m max @ Tj = 25°C ID = 49A @ Tc = 25°C Dual boost chopper Super Junction MOSFET Power Module Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction (PFC) Interleaved PFC Features Pins 3/4 must be shorted together Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Each leg can be easily paralleled to achieve a single boost of twice the current capability Low profile RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 49 38 130 ±20 45 250 15 3 1900 Unit V A V m W A October, 2012 ID Parameter Drain - Source Breakdown Voltage mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–8 APTC60VDAM45T1G – Rev 1 Symbol VDSS APTC60VDAM45T1G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Typ Tj = 25°C Tj = 125°C VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V 2.1 40 3 Max 250 500 45 3.9 100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Typ 7.2 8.5 nF 150 VGS = 10V VBus = 300V ID = 49A nC 34 51 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 49A RG = 5 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 5 675 µJ 520 1100 µJ 635 Chopper diode ratings and characteristics IRM IF Min VR=600V DC Forward Current Tc = 80°C Diode Forward Voltage IF = 60A trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A VR = 400V di/dt =200A/µs www.microsemi.com 25 500 60 1.7 IF = 120A Unit V Tj = 25°C Tj = 125°C IF = 60A VF Max 600 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 2 Tj = 125°C 1.4 Tj = 25°C 70 Tj = 125°C 140 Tj = 25°C 100 Tj = 125°C 690 µA A 2.3 V October, 2012 VRRM Test Conditions ns nC 2–8 APTC60VDAM45T1G – Rev 1 Symbol Characteristic APTC60VDAM45T1G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ CoolMOS Chopper Diode To heatsink M4 4000 -40 -40 -40 2 Max 0.5 0.85 Unit °C/W V 150 125 100 3 80 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT Typ 50 5 3952 4 Max Unit k % K % R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com www.microsemi.com 3–8 APTC60VDAM45T1G – Rev 1 October, 2012 SP1 Package outline (dimensions in mm) APTC60VDAM45T1G Typical IGBT Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 0 100 80 60 40 TJ=125°C 20 TJ=25°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 Normalized to VGS=10V @ 50A 1.25 1.2 VGS=10V 1.15 1.1 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 50 RDS(on) vs Drain Current 1.3 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) 0.9 40 30 20 10 0 0 20 40 60 80 100 120 140 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) October, 2012 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 150 4–8 APTC60VDAM45T1G – Rev 1 ID, Drain Current (A) 320 1.1 1.0 0.9 0.8 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.0 1.5 1.0 0.5 0.0 25 TJ, Junction Temperature (°C) 1000 1.0 ID, Drain Current (A) 0.9 0.8 0.7 limited by RDSon 100 100 µs 0.6 1 ms Single pulse TJ=150°C TC=25°C 10 10 ms 1 25 50 75 100 125 150 1 Coss Ciss 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 12 ID=50A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) October, 2012 VGS(TH), Threshold Voltage (Normalized) 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1.1 C, Capacitance (pF) VGS=10V ID= 50A 2.5 5–8 APTC60VDAM45T1G – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60VDAM45T1G APTC60VDAM45T1G Delay Times vs Current 140 Rise and Fall times vs Current 70 td(off) 100 VDS=400V RG=5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=5Ω TJ=125°C L=100µH 60 50 tr and tf (ns) tf 40 30 tr 20 td(on) 20 10 0 0 0 10 20 30 40 50 60 70 80 0 10 20 ID, Drain Current (A) 1.6 Eon 1.2 Eoff 0.8 0.4 VDS=400V ID=50A TJ=125°C L=100µH 2 1.5 60 70 80 Eoff Eon 1 0.5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 0 ZCS 200 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 150 hard switching 100 50 0 5 30 40 50 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) Operating Frequency vs Drain Current ZVS 20 Gate Resistance (Ohms) 300 250 10 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) www.microsemi.com TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 October, 2012 0 Frequency (kHz) 50 Switching Energy vs Gate Resistance 2.5 Switching Energy (mJ) Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH 40 ID, Drain Current (A) Switching Energy vs Current 2 30 VSD, Source to Drain Voltage (V) 6–8 APTC60VDAM45T1G – Rev 1 td(on) and td(off) (ns) 120 APTC60VDAM45T1G Typical chopper diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.9 0.8 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.05 0.1 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 160 TJ=125°C 120 80 TJ=25°C 40 0 0.0 0.5 1.0 1.5 2.0 2.5 150 125 30 A 100 60 A 75 50 3.0 0 200 400 600 800 -diF/dt (A/µs) QRR vs. Current Rate Charge TJ=125°C VR=400V 1.5 120 A 60 A 30 A 1.0 0.5 0.0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) IRRM vs. Current Rate of Charge 40 TJ=125°C VR=400V 35 30 120 A 25 60 A 20 15 10 5 30 A 0 0 200 -diF/dt (A/µs) 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage DC Forward Current vs. Case Temp. 500 100 400 80 300 60 IF (A) C, Capacitance (pF) 1000 1200 200 40 100 20 0 Duty Cycle = 0.5 TJ=175°C 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 October, 2012 QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 2.0 TJ=125°C VR=400V 120 A 175 Case Temperature (°C) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 7–8 APTC60VDAM45T1G – Rev 1 IF, Forward Current (A) Trr vs. Current Rate of Charge 175 200 APTC60VDAM45T1G DISCLAIMER 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