APTC80DDA15T3G Dual Boost chopper Super Junction MOSFET Power Module Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction 13 14 CR1 CR2 22 7 23 8 VDSS = 800V RDSon = 150m max @ Tj = 25°C ID = 28A @ Tc = 25°C Features Q2 Q1 26 4 27 3 29 30 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 13 32 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a single boost of twice the current capability RoHS Compliant Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 28 21 110 ±30 150 277 17 0.5 670 Unit V A October, 2012 ID Parameter Drain - Source Breakdown Voltage V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTC80DDA15T3G – Rev 2 Symbol VDSS APTC80DDA15T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Typ Tj = 25°C Tj = 125°C VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V VGS = 10V, ID = 14A VGS = VDS, ID = 2mA VGS = ±20 V, VDS = 0V 2.1 3 Min Typ 4507 2092 108 Max 50 375 150 3.9 ±150 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge 180 Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 400V ID = 28A Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Inductive switching @125°C VGS = 15V VBus = 533V ID = 28A RG = 2.5 Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω 10 13 83 Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy pF nC 22 90 ns 35 486 µJ 278 850 µJ 342 Chopper diode ratings and characteristics IF VF Maximum Reverse Leakage Current VR=1000V Min 1000 Tj = 25°C Tj = 125°C DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 60A VR = 667V di/dt=200A/µs Tj = 125°C Tj = 25°C 280 Tj = 125°C Tj = 25°C 350 760 Tj = 125°C 3600 www.microsemi.com Max 250 500 60 1.9 2.2 1.7 Tc = 100°C IF = 60A IF = 120A IF = 60A Typ Unit V µA A 2.5 V October, 2012 IRM Test Conditions ns nC 2–7 APTC80DDA15T3G – Rev 2 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APTC80DDA15T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ Transistor Diode To heatsink M4 4000 -40 -40 -40 2 Max 0.45 0.9 Unit °C/W V 150 125 100 3 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT Min Typ 50 3952 Max Unit k K R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T25 T See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTC80DDA15T3G – Rev 2 October, 2012 SP3 Package outline (dimensions in mm) APTC80DDA15T3G Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 Single Pulse 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 80 100 VGS=15&10V 6.5V 60 50 6V 40 5.5V 30 5V 20 4.5V 10 60 40 TJ=25°C 20 TJ=125°C 4V TJ=-55°C 0 0 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 30 Normalized to VGS=10V @ 14A 1.3 ID, DC Drain Current (A) VGS=10V 1.2 VGS=20V 1.1 1 0.9 25 20 15 10 5 0 0 10 20 30 40 50 60 25 50 75 100 125 150 October, 2012 0.8 TC, Case Temperature (°C) ID, Drain Current (A) www.microsemi.com 4–7 APTC80DDA15T3G – Rev 2 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 80 ID, Drain Current (A) ID, Drain Current (A) 70 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 VGS=10V ID= 14A 2.5 2.0 1.5 1.0 0.5 0.0 -50 TJ, Junction Temperature (°C) 100 150 1000 1.0 0.9 0.8 100 0 50 100 0 1 1000 Coss 100 Crss 10 0 VGS, Gate to Source Voltage (V) Ciss Single pulse TJ=150°C TC=25°C 1 TC, Case Temperature (°C) 10000 1ms 100ms 150 Capacitance vs Drain to Source Voltage 100000 100µs 10 0.7 -50 limited by RDSon 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=28A TJ=25°C 14 VDS=160V 12 VDS=400V 10 8 VDS=640V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 0 40 80 120 160 200 Gate Charge (nC) October, 2012 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 50 Maximum Safe Operating Area Threshold Voltage vs Temperature 1.2 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 5–7 APTC80DDA15T3G – Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80DDA15T3G APTC80DDA15T3G Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 VDS=533V RG=2.5Ω TJ=125°C L=100µH 60 40 tr and tf (ns) td(on) 20 30 VDS=533V RG=2.5Ω TJ=125°C L=100µH 20 10 0 0 10 20 30 40 ID, Drain Current (A) 50 10 1200 Switching Energy (µJ) Eon 900 600 50 Eoff 300 VDS=533V ID=28A TJ=125°C L=100µH 2000 1500 Eon 1000 Eon Eoff 500 0 0 10 20 30 40 ID, Drain Current (A) 0 50 Operating Frequency vs Drain Current 350 ZVS 300 250 200 Hard switching 150 100 IDR, Reverse Drain Current (A) 400 VDS=533V D=50% RG=2.5Ω TJ=125°C TC=75°C ZCS 50 0 6 5 10 15 20 Gate Resistance (Ohms) 25 Source to Drain Diode Forward Voltage 1000 100 TJ=150°C 10 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) TJ=25°C 1 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. www.microsemi.com 6–7 October, 2012 Eon and Eoff (µJ) 2500 VDS=533V RG=2.5Ω TJ=125°C L=100µH 20 30 40 ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 1500 Frequency (kHz) tr APTC80DDA15T3G – Rev 2 td(on) and td(off) (ns) td(off) 80 APTC80DDA15T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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