1200VAPT50GF120B2_LR(G)
APT50GF120B2R
APT50GF120LR
APT50GF120B2RG* APT50GF120LRG*
TYPICAL PERFORMANCE CURVES
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
FAST IGBT
(B2)
T-Max®
TO-264
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch through technology, the Fast IGBToffers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• High Freq. Switching to 20KHz
• RBSOA and SCSOA Rated
• Ultra Low Leakage Current
(L)
C
• Intergrated Gate Resistor: Low EMI, High Reliability
G
E
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50GF120B2_LR(G)
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current
I C2
Continuous Collector Current @ TC = 100°C
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
7
@ TC = 25°C
UNIT
Volts
135
75
1
Amps
150
150A @ 1200V
Switching Safe Operating Area @ TJ = 150°C
Watts
781
Total Power Dissipation
Operating and Storage Junction Temperature Range
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500µA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
RG(int)
MAX
5.5
6.5
2.5
3.0
Units
1200
(VCE = VGE, I C = 700µA, Tj = 25°C)
4.5
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
TYP
3.1
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Volts
100
2
Gate-Emitter Leakage Current (VGE = ±20V)
±100
5
Intergrated Gate Resistor
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
1000
nA
Ω
5-2006
V(BR)CES
MIN
Rev E
Characteristic / Test Conditions
052-6216
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50GF120B2_LR(G)
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
3
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
MIN
TYP
Capacitance
3460
VGE = 0V, VCE = 25V
385
f = 1 MHz
225
Gate Charge
9.5
VGE = 15V
340
VCE = 600V
MAX
UNIT
pF
V
nC
30
I C = 50A
205
7
SSOA
td(on)
tr
td(off)
tf
Eon1
tf
43
70
RG = 1.0Ω 7
4
3600
TJ = +25°C
5
2640
Turn-on Delay Time
Inductive Switching (125°C)
25
VCC = 800V
43
Current Rise Time
Turn-off Delay Time
VGE = 15V
300
RG = 1.0Ω 7
95
3750
I C = 50A
Current Fall Time
Turn-on Switching Energy
Eon2
Turn-on Switching Energy (With Diode)
Eoff
Turn-off Switching Energy
µJ
4675
6
Eon1
ns
260
I C = 50A
Current Fall Time
Turn-off Switching Energy
td(off)
25
VGE = 15V
Eoff
A
VCC = 800V
Turn-off Delay Time
Turn-on Switching Energy
150
Inductive Switching (25°C)
Current Rise Time
Turn-on Switching Energy (With Diode)
tr
15V, L = 100µH,VCE = 1200V
Turn-on Delay Time
Eon2
td(on)
TJ = 150°C, R G = 1.0Ω, VGE =
Switching Safe Operating Area
44
55
TJ = +125°C
ns
µJ
6400
6
3400
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
MIN
TYP
MAX
Junction to Case (IGBT)
.16
RθJC
Junction to Case (DIODE)
N/A
WT
1
Characteristic
RθJC
Package Weight
UNIT
°C/W
6.1
gm
Repetitive Rating: Pulse width limited by maximum junction temperature.
052-6216
Rev E
5-2006
2 For Combi devices, Ices includes both IGBT and diode leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
Mircosemi Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
= 15V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
120
TJ = 25°C
100
TJ = -55°C
80
TJ = 125°C
60
40
20
12V
120
11V
100
80
10V
60
9V
40
8V
0
0
1
2
3
4
5
6
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0
5
10
15
20
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
160
120
100
80
60
TJ = -55°C
40
TJ = 25°C
20
TJ = 125°C
0
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
140
IC, COLLECTOR CURRENT (A)
13V
140
20
0
0
15V
160
J
10
VCE = 960V
8
6
4
2
0
50
3
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
IC = 50A
IC = 25A
2
1
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
5
IC = 25A
2
1
0
0.85
0.80
0.75
0.70
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
160
0.90
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
25
50
75
100
125
150
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
1.10
0.95
IC = 50A
3
180
1.00
IC = 100A
4
1.15
1.05
100 150 200 250 300 350 400
GATE CHARGE (nC)
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC = 100A
4
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
5
VCE = 240V
VCE = 600V
12
0
2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 50A
C
T = 25°C
14
0
140
120
100
80
Lead limited
60
40
20
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
5-2006
GE
140
Rev E
V
APT50GF120B2_LR(G)
180
052-6216
160
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
30
VGE = 15V
25
20
15
10
VCE = 800V
TJ = 25°C or 125°C
RG = 1.0Ω
L = 100µH
5
0
150
100
VCE = 800V
RG = 1.0Ω
L = 100µH
50
100
80
60
40
TJ = 125°C, VGE = 15V
80
60
TJ = 25°C, VGE = 15V
40
20
0
110
90
70
50
30
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
7
EOFF, TURN OFF ENERGY LOSS (mJ)
= 800V
V
CE
= +15V
V
GE
R = 1.0Ω
G
20
TJ = 125°C
15
10
5
TJ = 25°C
= 800V
V
CE
= +15V
V
GE
T = 125°C
J
25
20
15
10
Eoff,100A
Eon2,50A
Eoff,50A
5
Eoff,25A
Eon2,25A
20
15
10
5
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
G
TJ = 125°C
5
4
3
2
TJ = 25°C
1
25
Eon2,100A
SWITCHING ENERGY LOSSES (mJ)
30
6
110
90
70
50
30
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
110
90
70
50
30
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
35
= 800V
V
CE
= +15V
V
GE
R = 1.0Ω
0
0
0
RG = 1.0Ω, L = 100µH, VCE = 800V
100
TJ = 25 or 125°C,VGE = 15V
tf, FALL TIME (ns)
tr, RISE TIME (ns)
VGE =15V,TJ=25°C
120
RG = 1.0Ω, L = 100µH, VCE = 800V
25
EON2, TURN ON ENERGY LOSS (mJ)
200
140
110
90
70
50
30
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
SWITCHING ENERGY LOSSES (mJ)
VGE =15V,TJ=125°C
110
90
70
50
30
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
0
5-2006
250
0
20
Rev E
300
110
90
70
50
30
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
120
052-6216
APT50GF120B2_LR(G)
350
35
= 800V
V
CE
= +15V
V
GE
R = 1.0Ω
Eon2,100A
G
20
15
10
Eoff,100A
5
Eon2,50A
Eon2,25A
Eoff,50A
0
Eoff,25A
125
100
75
50
25
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
IC, COLLECTOR CURRENT (A)
Cies
P
C, CAPACITANCE ( F)
APT50GF120B2_LR(G)
160
6,000
1,000
500
Coes
140
120
100
80
60
40
Cres
20
100
0
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.18
D = 0.9
0.14
0.12
0.7
0.10
0.5
0.08
Note:
0.06
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.16
0.3
t2
0.04
t
SINGLE PULSE
0.1
0.02
0
t1
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
0.00740
0.252
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
5
T = 100°C
C
T = 125°C
J
D = 50 %
V
= 800V
CE
R = 1.0Ω
G
1
F
= min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
max
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
10
20
30
40
50
60
70
80
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
5-2006
0.0941
C
Rev E
0.0663
Dissipated Power
(Watts)
T = 75°C
10
052-6216
TC (°C)
ZEXT
TJ (°C)
FMAX, OPERATING FREQUENCY (kHz)
60
APT50GF120B2_LR(G)
APT40DQ120
Gate Voltage
10%
TJ = 125°C
td(on)
tr
V CE
IC
V CC
Collector Current
90%
5%
10%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
TJ = 125°C
td(off)
90%
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
T-MAX® (B2) Package Outline
TO-264(L) Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
e1 SAC: Tin, Silver, Copper
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
20.80 (.819)
21.46 (.845)
0.40 (.016)
0.79 (.031)
4.50
(.177) Max.
5-2006
Rev E
052-6216
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
Collector
Collector
5.38 (.212)
6.20 (.244)
Gate
Collector
Emitter
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Collector
Emitter