APT58M50JU3 ISOTOP® Buck chopper MOSFET Power Module VDSS = 500V RDSon = 65m Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application AC and DC motor control Switched Mode Power Supplies D Features G S A Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant A S D G Power MOS 8™ MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged ISOTOP® Package (SOT-227) Very low stray inductance High level of integration ISOTOP Absolute maximum ratings ID IDM VGS RDSon PD IAR Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 500 58 43 270 ±30 65 543 42 Unit V A V m W A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APT58M50JU3 – Rev 1 October , 2012 Symbol VDSS APT58M50JU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Tj = 25°C VDS = 500V VGS = 0V Tj = 125°C VGS = 10V, ID = 42A VGS = VDS, ID = 2.5mA VGS = ±30 V Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Min 3 Typ 4 Max 250 1000 65 5 ±100 Unit Max Unit µA m V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 250V ID = 42A Td(on) Turn-on Delay Time Tr Td(off) Tf Min Turn-off Delay Time Fall Time pF 340 nC 75 155 60 Resistive switching @ 25°C VGS = 15V VBus = 333V ID = 42A RG = 2.2 Rise Time Typ 10800 1164 148 70 ns 155 50 Chopper diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF Maximum Reverse Leakage Current Test Conditions VR=600V DC Forward Current IF = 30A IF = 60A IF = 30A Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 30A VR = 400V di/dt =200A/µs Min 600 Tj = 25°C Tj = 125°C Tc = 90°C Typ Max 25 500 Tj = 125°C Tj = 25°C 30 1.8 2.2 1.5 25 Tj = 125°C 160 Tj = 25°C 35 Tj = 125°C 480 Unit V µA A 2.2 V ns nC Thermal and package characteristics Min RthJC Junction to Case Thermal Resistance RthJA VISOL TJ,TSTG TL Torque Wt Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com Typ Mosfet Diode 2500 -40 Max 0.23 1.05 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g 2-6 APT58M50JU3 – Rev 1 October , 2012 Symbol Characteristic APT58M50JU3 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) Drain Anode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Dimensions in Millimeters and (Inches) Gate Typical Mosfet Performance Curve 0.9 0.2 0.7 0.15 0.5 0.1 0.3 0.05 0.1 Single P ulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 3-6 APT58M50JU3 – Rev 1 October , 2012 Thermal Impedance (°C/W) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.25 APT58M50JU3 Low Voltage Output Characteristics 250 160 VGS=7,8 &10V 140 TJ=25°C 200 ID, Drain Current (A) 150 100 TJ=125°C 50 6.5V 120 100 6V 80 5.5V 60 40 20 0 TJ=125°C 0 0 5 10 15 20 0 5 20 25 30 2.5 VGS=10V ID=42A 1.5 1 Transfert Characteristics 125 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 ID, Drain Current (A) RDSon, Drain to Source ON resistance Normalized RDSon vs. Temperature TJ=125°C 75 50 25 TJ=25°C 0.5 25 50 75 100 125 0 150 0 1 TJ, Junction Temperature (°C) Gate Charge vs Gate to Source 3 4 5 6 C, Capacitance (pF) VDS=250V 8 VDS=400V 6 7 Capacitance vs Drain to Source Voltage 100000 VDS=100V ID=42A TJ=25°C 10 2 VGS, Gate to Source Voltage (V) 12 VGS, Gate to Source Voltage 15 VDS, Drain to Source Voltage (V) VDS, Drain to Source Voltage (V) 2 10 4 2 Ciss 10000 1000 Coss Crss 100 10 0 0 60 120 180 240 300 360 0 50 100 150 200 VDS, Drain to Source Voltage (V) Gate Charge (nC) www.microsemi.com 4-6 APT58M50JU3 – Rev 1 October , 2012 ID, Drain Current (A) VGS=10V Low Voltage Output Characteristics APT58M50JU3 Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.2 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 100 80 TJ=125°C 60 40 20 TJ=25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 TJ=125°C VR=400V 150 125 60 A 100 30 A 75 15 A 50 3.0 0 200 TJ=125°C VR=400V 60 A 1.0 30 A 15 A 0.5 0.0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) QRR vs. Current Rate Charge 1.5 600 800 1000 1200 IRRM vs. Current Rate of Charge 30 TJ=125°C VR=400V 25 60 A 20 15 30 A 15 A 10 5 0 0 200 -diF/dt (A/µs) 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 50 200 175 Duty Cycle = 0.5 TJ=175°C 40 150 IF(AV) (A) C, Capacitance (pF) 400 -diF/dt (A/µs) VF, Anode to Cathode Voltage (V) 125 100 75 50 30 20 10 25 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 175 Case Temperature (°C) ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 5-6 APT58M50JU3 – Rev 1 October , 2012 IF, Forward Current (A) Trr vs. Current Rate of Charge 175 120 APT58M50JU3 DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply. 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