APT60DF60HJ ISOTOP®Fast Diode Full Bridge Power Module VRRM = 600V IC = 60A @ Tc = 80°C Application Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~ ~ Ultra fast recovery times Soft recovery characteristics High blocking voltage High current Low leakage current Very low stray inductance High level of integration ISOTOP® Package (SOT-227) Benefits - Outstanding performance at high frequency operation Low losses Low noise switching Direct mounting to heatsink (isolated package) Low junction to case thermal resistance RoHS Compliant Symbol VR VRRM Parameter Maximum DC reverse Voltage Maximum Peak Repetitive Reverse Voltage IF(AV) Maximum Average Forward Current IFSM Non-Repetitive Forward Surge Current Duty cycle = 50% 8.3ms Max ratings Unit 600 V TC = 25°C 90 TC = 80°C TJ = 45°C 60 A 500 These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APT60DF60HJ – Rev 2 October, 2012 Absolute maximum ratings APT60DF60HJ All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic VF Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Test Conditions IF = 60A IF = 120A Tj = 125°C IF = 60A Tj = 25°C VR = 600V Tj = 125°C Min Typ 1.7 2 1.4 Max 2.3 V 25 500 VR = 200V Unit 145 µA pF Dynamic Characteristics Symbol Characteristic trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Test Conditions IF = 60A VR = 400V di/dt = 200A/µs IF = 60A VR = 400V di/dt=1000A/µs Min Typ Tj = 25°C 70 Tj = 125°C 140 Tj = 25°C Tj = 125°C 100 690 Tj = 25°C 4 Tj = 125°C 9 Tj = 125°C Max Unit ns nC A 80 ns 1540 nC 31 A Thermal and package characteristics Characteristic Junction to Case Thermal resistance Junction to Ambient Min RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 2500 -55 Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com Typ Max 0.85 20 Unit °C/W V 175 300 1.5 29.2 °C N.m g 2-5 APT60DF60HJ – Rev 2 October, 2012 Symbol RthJC RthJA VISOL TJ,TSTG TL Torque Wt APT60DF60HJ Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.9 0.8 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.05 0.1 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) IF, Forward Current (A) Trr vs. Current Rate of Charge 175 150 TJ=125°C 125 100 TJ=25°C 75 50 25 0 0.0 0.5 1.0 1.5 2.0 150 125 30 A 100 60 A 75 50 2.5 0 200 400 600 800 -diF/dt (A/µs) QRR vs. Current Rate Charge TJ=125°C VR=400V 1.5 120 A 60 A 30 A 1.0 0.5 0.0 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 2.0 TJ=125°C VR=400V 120 A 1000 1200 IRRM vs. Current Rate of Charge 40 TJ=125°C VR=400V 35 30 120 A 25 60 A 20 15 10 5 30 A 0 -diF/dt (A/µs) 0 200 400 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage 400 300 200 100 0 1 10 100 1000 VR, Reverse Voltage (V) www.microsemi.com 3-5 APT60DF60HJ – Rev 2 October, 2012 C, Capacitance (pF) 500 APT60DF60HJ SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 25.2 (0.992) 25.4 (1.000) 3.30 (.130) 12.6 (.496) 4.57 (.180) 12.8 (.504) 1.95 (.077) 2.14 (.084) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) Dimensions in Millimeters and (Inches) ISOTOP® is a registered trademark of ST Microelectronics NV www.microsemi.com 4-5 APT60DF60HJ – Rev 2 October, 2012 38.0 (1.496) 38.2 (1.504) APT60DF60HJ DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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