Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507AF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current VBE = 0 V tf Fall time 4 4 0.3 0.21 1500 800 8 15 45 3.0 0.45 - V V A A W V A A µs µs PINNING - SOT199 PIN Ths ≤ 25 ˚C IC = 4 A; IB = 1 A f = 16kHz f = 56kHz ICsat = 4 A; f = 16kHz ICsat = 4 A; f = 56kHz PIN CONFIGURATION SYMBOL DESCRIPTION 1 base 2 collector 3 emitter case isolated c case b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V Ths ≤ 25 ˚C MIN. MAX. UNIT -55 - 1500 800 8 15 4 6 5 45 150 150 V V A A A A A W ˚C ˚C TYP. MAX. UNIT - 2.8 K/W 35 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air 1 Turn-off current. August 1998 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507AF ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol Repetitive peak voltage from all three terminals to external heatsink R.H. ≤ 65 % ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. MAX. UNIT - - 2500 V - 22 - pF MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 800 - 100 - µA V 7.5 0.84 4.2 13.5 0.92 12 5.7 3.0 1.01 7.3 V V V TYP. MAX. UNIT 68 - pF 3.8 0.30 4.6 0.45 µs µs 2.4 0.21 - µs µs STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL ICES ICES IEBO VCEOsust BVEBO VCEsat VBEsat hFE hFE PARAMETER Collector cut-off current CONDITIONS 2 VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax Tj = 125 ˚C Emitter cut-off current VEB = 6 V; IC = 0 A Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Emitter-base breakdown voltage IB = 1 mA Collector-emitter saturation voltages IC = 4 A; IB = 1 A Base-emitter saturation voltage IC = 4 A; IB = 1 A DC current gain IC = 100 mA; VCE = 5 V IC = 4 A; VCE = 5 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz Switching times (16 kHz line deflection circuit) ICsat = 4.0 A;IB1 = 0.8 A (IB2 = -2.0 A) ts tf Turn-off storage time Turn-off fall time Switching times (56 kHz line deflection circuit) ts tf ICsat = 4.0 A;IB1 = 0.8 A (IB2 = -2.1 A) Turn-off storage time Turn-off fall time 2 Measured with half sine-wave voltage (curve tracer). August 1998 2 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507AF ICsat + 50v 90 % 100-200R IC 10 % Horizontal tf Oscilloscope t ts IB IB1 Vertical t 1R 100R 6V 30-60 Hz - IB2 Fig.1. Test circuit for VCEOsust. Fig.4. Switching times definitions. IC / mA + 150 v nominal adjust for ICsat Lc 250 200 LB IBend 100 0 VCE / V T.U.T. Cfb -VBB min VCEOsust Fig.2. Oscilloscope display for VCEOsust. TRANSISTOR IC Fig.5. Switching times test circuit. ICsat 100 hFE BU4507 1V DIODE VCE = 1V Ths = 25 C Ths = 85 C t IB1 IB 10 t 20us 26us IB2 64us VCE 1 0.001 t Fig.3. Switching times waveforms (16 kHz). August 1998 0.01 0.1 1 10 IC / A Fig.6. High and low DC current gain. 3 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor 100 BU4507AF BU4507AF hFE VCEsat / V 10 VCE = 5V Ths = 25 C Ths = 85 C BU4507AF/X/Z Ths = 25 C Ths = 85 C 1 10 IC/IB = 5 0.1 1 0.001 0.01 0.1 1 IC / A 0.01 0.1 10 Fig.7. High and low DC current gain. 1 10 IC / A 100 Fig.10. Typical collector-emitter saturation voltage. VBEsat / V 1.2 VCC BU4507AF/X/Z Ths = 25 C Ths = 85 C 1.1 1 LC 0.9 IBend VCL 0.8 LB CFB T.U.T. -VBB 0.7 0.6 0 0.5 1 1.5 2 2.5 IB / A 3 Fig.11. Typical base-emitter saturation voltage. Fig.8. Test Circuit RBSOA. IC / A 30 IC = 4 A BU2507 10 ts/tf / us ICsat = 4 A Ths = 85 C Freq = 16 kHz 8 ts 20 6 10 4 2 0 100 1000 VCE / V 0 Fig.9. Reverse bias safe operating area. Tj ≤ Tjmax August 1998 tf 1500 0 0.5 1 1.5 2 2.5 IB / A 3 Fig.12. Typical collector storage and fall time. IC =4 A; Tj = 85˚C; f = 16kHz 4 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor 120 BU4507AF Normalised Power Derating PD% Zth K/W BU4507AF 10 with heatsink compound 110 100 90 0.5 1 80 70 0.2 60 0.05 0.1 0.1 50 0.02 40 30 PD 0.01 tp D= 20 tp T 0 10 T 0 0 20 40 60 80 Ths / C 100 120 0.001 1.0E-07 140 1.0E-03 1.0E-01 t 1.0E+01 t/s Fig.13. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C August 1998 1.0E-05 Fig.14. Transient thermal impedance. 5 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507AF MECHANICAL DATA Dimensions in mm 15.3 max Net Mass: 5.5 g 5.2 max 3.1 3.3 0.7 7.3 3.2 o 45 6.2 5.8 21.5 max seating plane 3.5 max not tinned 3.5 15.7 min 1 2 2.1 max 5.45 3 1.2 1.0 0.7 max 0.4 M 2.0 5.45 Fig.15. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". August 1998 6 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU4507AF DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1998 7 Rev 1.100