Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch DESCRIPTION BUK210-50Y QUICK REFERENCE DATA Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic package. SYMBOL PARAMETER IL Nominal load current (ISO) APPLICATIONS SYMBOL PARAMETER General controller for driving lamps, motors, solenoids, heaters. VBG IL Tj RON Continuous off-state supply voltage Continuous load current Continuous junction temperature On-state resistance Tj = 25˚C FEATURES Vertical power TrenchMOS Low on-state resistance CMOS logic compatible Very low quiescent current Overtemperature protection Load current limiting Latched overload and short circuit protection Overvoltage and undervoltage shutdown with hysteresis On-state open circuit load detection Diagnostic status indication Voltage clamping for turn off of inductive loads ESD protection on all pins Reverse battery, overvoltage and transient protection MIN. UNIT 9 A MAX. UNIT 50 20 150 38 V A ˚C mΩ FUNCTIONAL BLOCK DIAGRAM BATT STATUS POWER MOSFET INPUT CONTROL & PROTECTION CIRCUITS LOAD RG GROUND Fig.1. Elements of the TOPFET HSS with internal ground resistor. PINNING - SOT263B-01 PIN PIN CONFIGURATION SYMBOL DESCRIPTION mb 1 Input 2 Flag 3 Drain 4 Protection supply 5 Source mb D TOPFET P F I P 12345 Front view tab S MBL267 Fig. 2. Fig. 3. Drain November 2002 1 Rev 2.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK210-50Y LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS VBG Continuous supply voltage IL Continuous load current PD Tstg Total power dissipation Storage temperature Tj Continuous junction temperature1 Tsold Lead temperature MIN. MAX. UNIT 0 50 V Tmb ≤ 95˚C - 20 A Tmb ≤ 25˚C -55 67 175 W ˚C - 150 ˚C - 260 ˚C - 16 32 V V 3.2 - kΩ -5 5 mA -50 50 mA - 150 mJ MIN. MAX. UNIT - 2 kV during soldering Reverse battery voltages2 -VBG -VBG Continuous reverse voltage Peak reverse voltage Application information RI, RS External resistors3 to limit input, status currents Input and status II, IS Continuous currents II, IS Repetitive peak currents δ ≤ 0.1, tp = 300 µs Inductive load clamping IL = 10 A, VBG = 16 V Non-repetitive clamping energy Tj = 150˚C prior to turn-off EBL ESD LIMITING VALUE SYMBOL PARAMETER CONDITIONS VC Electrostatic discharge capacitor voltage Human body model; C = 250 pF; R = 1.5 kΩ THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT - 1.52 1.86 K/W - 60 75 K/W 4 Thermal resistance Rth j-mb Junction to mounting base Rth j-a Junction to ambient in free air 1 For normal continuous operation. A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch. 2 Reverse battery voltage is allowed only with external resistors to limit the input and status currents to a safe value. The connected load must limit the reverse load current. The internal ground resistor limits the reverse battery ground current. Power is dissipated and the Tj rating must be observed. 3 To limit currents during reverse battery and transient overvoltages (positive or negative). 4 Of the output power MOS transistor. November 2002 2 Rev 2.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK210-50Y STATIC CHARACTERISTICS Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. SYMBOL PARAMETER CONDITIONS VBG Clamping voltages Battery to ground VBL -VLG Battery to load Negative load to ground -VLG Negative load voltage1 IL = 10 A; tp = 300 µs Supply voltage battery to ground TYP. MAX. UNIT IG = 1 mA 50 55 65 V IL = IG = 1 mA IL = 10 mA 50 18 55 23 65 28 V V 20 25 30 V 5.5 - 35 V 2 VBG Operating range IB Currents Quiescent current3 IL MIN. 9 V ≤ VBG ≤ 16 V VLG = 0 V 4 Off-state load current 5 Operating current IL = 0 A IL Nominal load current6 VBL = 0.5 V RON RON RG On-state resistance On-state resistance Internal ground resistance - 20 µA - 0.1 - 2 20 µA µA Tmb = 25˚C - 0.1 2 1 4 µA mA Tmb = 85˚C 9 - - A VBL = VBG IG Resistances Tmb = 25˚C VBG IL tp7 9 to 35 V 10 A 300 µs 25˚C - 28 38 mΩ 300 µs 150˚C 25˚C - 36 70 48 mΩ mΩ 150˚C - - 88 mΩ 95 150 190 Ω 6V 10 A IG = 10 mA Tmb 1 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. 2 On-state resistance is increased if the supply voltage is less than 9 V. 3 This is the continuous current drawn from the supply when the input is low and includes leakage current to the load. 4 The measured current is in the load pin only. 5 This is the continuous current drawn from the supply with no load connected, but with the input high. 6 Defined as in ISO 10483-1. For comparison purposes only. This parameter will not be characterised for automotive PPAP. 7 The supply and input voltage for the RON tests are continuous. The specified pulse duration tp refers only to the applied load current. November 2002 3 Rev 2.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK210-50Y INPUT CHARACTERISTICS 9 V ≤ VBG ≤ 16 V. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT II Input current VIG = 5 V 20 90 160 µA VIG Input clamping voltage II = 200 µA 5.5 7 8.5 V VIG(ON) Input turn-on threshold voltage - 2.4 3 V VIG(OFF) Input turn-off threshold voltage 1.5 2.1 - V ∆VIG Input turn-on hysteresis - 0.3 - V II(ON) Input turn-on current VIG = 3 V - - 100 µA II(OFF) Input turn-off current VIG = 1.5 V 10 - - µA STATUS CHARACTERISTICS The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL PARAMETER CONDITIONS VSG VSG Status clamping voltage Status low voltage IS = 100 µA IS = 100 µA IS IS Status leakage current MIN. TYP. MAX. UNIT 5.5 - 7 - 8.5 1 V V Tmb = 25˚C - 0.7 0.8 V Tmb = 25˚C - 0.1 15 1 µA µA 2 7 12 mA - 47 - kΩ MIN. TYP. MAX. UNIT 0.24 - 1.6 A 0.4 0.8 1.2 A - 0.16 - A VSG = 5 V 1 Status saturation current VSG = 5 V Application information RS External pull-up resistor OPEN CIRCUIT DETECTION CHARACTERISTICS An open circuit load can be detected in the on-state. Refer to TRUTH TABLE. Limits are at -40˚C ≤ Tmb ≤ 150˚C and typical is at Tmb = 25 ˚C. SYMBOL IL(TO) PARAMETER CONDITIONS Open circuit detection 9 V ≤ VBG ≤ 35 V Low current detect threshold Tj = 25˚C ∆IL(TO) Hysteresis 1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to prevent possible interference with normal operation of the device. November 2002 4 Rev 2.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK210-50Y UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS Limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C. Refer to TRUTH TABLE. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Undervoltage VBG(UV) Low supply threshold voltage1 2 4.2 5.5 V ∆VBG(UV) Hysteresis - 0.5 - V 40 45 50 V - 1 - V Overvoltage VBG(OV) High supply threshold voltage2 ∆VBG(OV) Hysteresis TRUTH TABLE ABNORMAL CONDITIONS DETECTED INPUT SUPPLY LOAD LOAD OUTPUT STATUS DESCRIPTION UV OV LC SC OT L X X X X X OFF H off H 0 0 0 0 0 ON H on & normal H 0 0 1 0 0 ON L on & low current detect H 1 0 X X X OFF H supply undervoltage lockout H 0 1 X 0 0 OFF H supply overvoltage shutdown H 0 0 0 1 X OFF L SC tripped H 0 0 0 0 1 OFF L OT shutdown3 KEY TO ABBREVIATIONS L H X 0 1 logic low logic high don’t care condition not present condition present UV OV LC SC OT undervoltage overvoltage low current or open circuit load short circuit overtemperature 1 Undervoltage sensor causes the device to switch off and reset. 2 Overvoltage sensor causes the device to switch off to protect its load. 3 The status will continue to indicate OT (even if the input goes low) until the device cools below the reset threshold. Refer to OVERLOAD PROTECTION CHARACTERISTICS. November 2002 5 Rev 2.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK210-50Y OVERLOAD PROTECTION CHARACTERISTICS 5.5 V ≤ VBG ≤ 35 V, limits are at -40˚C ≤ Tmb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL PARAMETER CONDITIONS IL(lim) Overload protection Load current limiting VBL = VBG VBG ≥ 9 V VBL(TO) Short circuit load protection Battery load threshold voltage1 td sc 2 Response time VBL > VBL(TO) MIN. TYP. MAX. UNIT 34 45 64 A VBG = 16 V 8 10 12 V VBG = 35 V 15 - 20 180 25 250 V µs 150 170 190 ˚C - 10 - ˚C MIN. TYP. MAX. UNIT Overtemperature protection Tj(TO) Threshold junction temperature3 ∆Tj(TO) Hysteresis SWITCHING CHARACTERISTICS Tmb = 25 ˚C, VBG = 13 V, for resistive load RL = 13 Ω. SYMBOL PARAMETER CONDITIONS During turn-on from input going high td on dV/dton Delay time Rate of rise of load voltage to 10% VL 30% to 70% VL - 40 0.35 60 1 µs V/µs t on Total switching time to 90% VL - 140 200 µs td off During turn-off Delay time from input going low to 90% VL - 55 80 µs dV/dtoff t off Rate of fall of load voltage Total switching time 70% to 30% VL to 10% VL - 0.6 85 1 120 V/µs µs CAPACITANCES Tmb = 25 ˚C; f = 1 MHz; VIG = 0 V. designed in parameters. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Cig Input capacitance VBG = 13 V - 15 20 pF Cbl Output capacitance VBL = 13 V - 250 350 pF Csg Status capacitance VSG = 5 V - 11 15 pF 1 The battery to load threshold voltage for short circuit protection is proportional to the battery supply voltage. After short circuit protection has operated, the input voltage must be toggled low for the switch to resume normal operation. 2 Measured from when the input goes high. 3 After cooling below the reset temperature the switch will resume normal operation. November 2002 6 Rev 2.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK210-50Y 5 IBG(ON) / mA BUK210-50Y VBL I VBG IS S TOPFET HSS IL OVERVOLTAGE SHUTDOWN 3 L OPERATING V IG = 5 V VLG G VSG IG RS CLAMPING B 2 LOAD VIG UNDERVOLTAGE SHUTDOWN 4 IB II 1 QUIESCENT VIG = 0 V 0 0 Fig.4. High side switch measurements schematic. (current and voltage conventions) RON / mOhm 80 10 20 30 40 VBG / V 50 60 70 Fig.7. Typical supply characteristics, 25 ˚C. IG = f(VBG); parameter VIG BUK210-50Y 40 RON / mOhm BUK210-50Y 38 typ . RON max 36 60 34 VBG = 6 V 32 30 40 28 9 V =< VBG =< 35 V 26 20 24 22 0 20 -50 0 50 O Tj / C 100 150 1 200 Fig.5. Typical on-state resistance, tp = 300 µs. RON = f(Tj); parameter VBG; condition IL = 10 A 50 10 100 VBG / V Fig.8. Typical on-state resistance,Tj = 25 ˚C. RON = f(VBG); condition IL = 10 A; tp = 300 µs BUK210-50Y IL / A 3.0 VBG / V IG / mA BUK210-50Y lL = 0 A >=8 40 30 7 6 2.5 5 2.0 9 V <= VBG <= 35 V lL l >>IL(TO) I L L(TO) 1.5 typ. 20 1.0 10 0.5 VBG = 50 V 0 0 0 1 VBL / V -50 2 Fig.6. Typical on-state characteristics, Tj = 25 ˚C. IL = f(Tj); parameter VBG; tp = 250 µs November 2002 0 50 O Tj / C 100 150 200 Fig.9. Typical operating supply current. IG = f(Tj); parameters IL, VBG; condition VIG = 5 V 7 Rev 2.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch 100E-6 BUK210-50Y BUK210-50Y IB / A BUK210-50Y IL(OC) / A 1.6 max. 10E-6 1.2 typ. 1E-6 100E-9 0.8 max. 10E-9 typ. 0.4 min. 1E-9 0.0 100E-12 -50 0 50 O 100 150 -50 200 0 50 Tj / C IL / A 100 150 200 Fig.13. Low load current detection threshold. IL(OC) = f(Tj); conditions VIG = 5 V; VBG ≥ 9 V Fig.10. Typical supply quiescent current. IB = f(Tj); condition VBG = 16 V, VIG = 0 V, VLG = 0 V 100E-6 O Tj / C BUK210-50Y 5.5 BUK210-50Y VBG(UV) / V max. 10E-6 typ. 1E-6 4.5 typ. 100E-9 10E-9 3.5 on 1E-9 off 00E-12 2.5 10E-12 -50 0 50 O Tj / C 100 150 -50 200 Fig.11. Typical off-state leakage current. IL = f(Tj); conditions VBL = 16 V = VBG, VIG = 0 V. 100E-6 IS / A 0 50 O Tj / C 100 150 200 Fig.14. Supply undervoltage thresholds. VBG(UV) = f(Tj); conditions VIG = 5 V; VBL ≤ 2 V BUK210-50Y 55 VBG(OV) / V BUK210-50Y max. 10E-6 max. 50 typ. 1E-6 on 45 100E-9 off min. 40 10E-9 1E-9 35 -50 0 50 O Tj / C 100 150 200 -50 Fig.12. Status leakage current. IS = f(Tj); conditions VSG = 5 V, VIG = VBG = 0 V November 2002 0 50 O Tj / C 100 150 200 Fig.15. Supply overvoltage thresholds. VBG(OV) = f(Tj); conditions VIG = 5 V; IL = 100 mA 8 Rev 2.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch VSG(LOW) / V 1 BUK210-50Y BUK210-50Y IS / mA 8 BUK210-50Y 6 4 0.5 2 0 0 -50 0 50 O Tj / C 100 150 0 200 VIG / V 2 3 4 5 VSG / V Fig.19. Typical status low characteristic, Tj = 25 ˚C. IS = f(VSG); conditions VIG = 5V, VBG = 13V,IL = 0A Fig.16. Typical status low characteristic. VSG = f(Tj); conditions VBG ≥ 9 V, IS = 100 µA 3.00 1 BUK210-50Y BUK210-50Y VSG / V 7.50 VIG / V = 7.40 5 7.30 2.50 7.20 7.10 2.00 VIG(ON) 7.00 VIG(OFF) 6.90 0 6.80 1.50 6.70 6.60 1.00 6.50 -50 0 50 O Tj / C 100 150 200 -50 Fig.17. Typical threshold voltage characteristic. VIG = f(Tj); condition 9V ≤ VBG ≤ 16V 7.50 50 O Tj / C 100 150 200 Fig.20. Typical status clamping voltage. VSG = f(Tj); condition IS = 100µA, VBG = 13V BUK210-50Y VIG / V 0 20 IS / mA BUK210-50Y 7.40 7.30 15 7.20 7.10 10 7.00 6.90 6.80 5 6.70 6.60 0 6.50 -50 0 50 O Tj / C 100 150 0 200 4 6 8 10 VSG / V Fig.18. Typical input clamping voltage. VIG = f(Tj); condition II = 200µA, VBG = 13V November 2002 2 Fig.21. Typical status characteristic, Tj = 25 ˚C. IS = f(VSG); conditions VIG = VBG = 0V 9 Rev 2.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK210-50Y VBG / V 65 BUK210-50Y VLG / V -10 BUK210-50Y IG = 200 mA -15 60 1 mA IL = -20 10 mA 55 10 A -25 50 -30 -50 0 50 O Tj / C 100 150 200 -50 VBL / V 50 O Tj / C 100 150 200 Fig.25. Typical negative load clamping voltage. VLG = f(Tj); parameter IL; condition VIG = = 0V Fig.22. Typical battery to ground clamping voltage. VBG = f(Tj); parameter IG 65 0 IL / A BUK210-50Y 0 BUK210-50Y -5 -10 60 -15 IL = -20 600 mA -25 1 mA -30 55 -35 -40 -45 -50 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 50 -50 0 50 O Tj / C 100 150 200 Fig.23. Typical battery to load clamping voltage. VBL = f(Tj); parameter IL; condition IG = 10mA 10 IL / A 0.0 VBL / V Fig.26. Typical reverse diode characteristic. IL = f(VBL); conditions VIG = 0 V, Tj = 25 ˚C BUK210-50Y 50 IL / A BUK210-50Y current limiting 45 40 VBL(TO) typ. 35 30 5 Short circuit trip = 150us 25 20 15 10 5 0 0 -30 -25 -20 -15 -10 0 VLG / V Fig.24. Typical negative load clamping. IL = f(VLG); conditions VIG = = 0V, Tj = 25˚C November 2002 2 4 6 8 10 12 VBL / V 14 16 18 20 Fig.27. Typical overload characteristic, Tmb = 25 ˚C. IL = f(VBL); condition VBG = 16 V; parameter tp 10 Rev 2.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK210-50Y VBL(TO) / V 35 IL(lim) / A BUK215-50Y BUK210-50Y 50 max. 30 25 45 typ. 25˚C 20 min. 40 15 10 35 5 0 0 10 20 VBG / V 30 40 30 50 -50 CBL 50 O Tj / C 100 150 200 Fig.31. Typical overload current, VBL = 8V. IL = f(Tj); parameter VBG = 13V;tp = 300 µs Fig.28. Short circuit load threshold voltage. VBL(TO) = f(VBG); conditions -40˚C ≤ Tmb ≤ 150˚C 10 nF 0 BUK210-50Y 12.0 VBL(TO) / V BUK210-50Y 11.8 11.6 11.4 11.2 11.0 1nF 10.8 10.6 10.4 10.2 10.0 100pF 0 10 20 VBL / V 30 40 -50 50 IG / mA 50 100 O 150 200 Tj / C Fig.29. Typical output capacitance. Tmb = 25 ˚C Cbl = f(VBL); conditions f = 1 MHz, VIG = 0 V 0 0 Fig.32. Typical short circuit load threshold voltage. VBL(TO) = f(Tj); condition VBG = 16 V BUK210-50Y BUK210-50Y Zth j-mb ( K / W ) 1e+01 D= -50 -100 1e+00 0.5 1e-01 0.2 0.1 0.05 0.02 -150 1e-02 -200 -20 -15 -10 -5 1e-03 1e-07 0 tp D= t T 1e-05 1e-03 tp T 1e-01 1e+02 t/s VBG / V Fig.30. Typical reverse battery characteristic. IG = f(VBG); conditions IL = 0 A, Tj = 25 ˚C November 2002 PD 0 Fig.33. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 11 Rev 2.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK210-50Y MECHANICAL DATA Plastic single-ended package; heatsink mounted; 1 mounting hole; 5-lead TO-220 lead form option SOT263B-01 E p1 A ∅p A1 q D1 mounting base D L3 L1 R L L4 m 1 L2 5 e b R w M c Q Q1 Q2 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (2) UNIT A mm 4.5 4.1 A1 b 1.39 0.85 1.27 0.70 c D D1 E 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 e L L1 L2 1.7 9.8 9.7 5.9 5.3 5.2 5.0 L4 L3(1) max. 2.4 1.6 0.5 m ∅p p1 q Q Q1 Q2 R w 0.8 0.6 3.8 3.6 4.3 4.1 3.0 2.7 2.0 4.5 8.2 0.5 0.4 Notes 1. Terminal dimensions are uncontrolled in this zone. 2. Positional accuracy of the terminals is controlled in this zone. OUTLINE VERSION SOT263B-01 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION 5-lead (option) TO-220 ISSUE DATE 01-01-11 Fig.34. SOT263B package1 leadform 263B-01, pin 3 connected to mounting base. 1 Refer to mounting instructions for TO220 envelopes. Epoxy meets UL94 VO at 1/8". Net mass: 2 g November 2002 12 Rev 2.000 Philips Semiconductors Product specification PowerMOS transistor TOPFET high side switch BUK210-50Y DEFINITIONS DATA SHEET STATUS DATA SHEET STATUS1 PRODUCT STATUS2 DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. November 2002 13 Rev 2.000