Transys Electronics L I M I T E D TO-251/252 Plastic-Encapsulated Transistors 6. 5 0¡ À 0. 10 0. 5 1¡ À 0 . 03 5¡ ã À. 10 5. 50¡ 0 TRANSISTOR (NPN) 2 . 30¡ À 0. 05 5. 3 0¡ À 0. 05 14. 70 D882 TO-251 TO-252-2 5¡ ã FEATURES 5¡ ã 7. 70 0. 80¡ À 0. 0 5 0. 6 0¡ À 0. 0 5 1. Power dissipation 2. 3 0¡ À 0. 05 2. 3 0¡ À 0. 0 5 1 . 20 0. 51 ¡ À 0 . 03 123 2. W (Tamb=25℃) COLLECTOR 6. 50¡ À 0 . 15 2. 30¡ À 0 . 10 5. 30¡ À 0. 10 0. 51¡ À 0 . 05 5¡ ã EMITTER À. 10 5. 50¡ 0 1. 20 0. 51¡ À 0 . 10 0¡ 0 « . 10 5¡ ã 5¡ ã 0. 6 0. 80¡ À 0. 10 2. 30¡ À 0 . 10 123 À. 15 1. 60¡ 0 0. 60¡ À 0. 10 2. 30¡ À 0. 10 0¡ ¡ ã« 9¡ ã 0. 51 À. 20 2. 70¡ 0 3. Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range À. 10 0. 75¡ 0 1.25 À. 20 9. 70¡ 0 PCM: BASE TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 6 V Collector cut-off current ICBO VCB= 40V, IE=0 1 µA Collector cut-off current ICEO VCE= 30V, IB=0 10 µA Emitter cut-off current IEBO VEB= 6V, IC=0 1 µA hFE(1) VCE= 2V, IC= 1A 60 hFE(2) VCE= 2V, IC= 100mA 32 Collector-emitter saturation voltage VCE (sat) IC= 2A, IB= 0.2 A 0.5 V Base-emitter saturation voltage VBE (sat) IC= 2A, IB= 0.2 A 1.5 V 400 DC current gain fT Transition frequency VCE= 5V, Ic=0.1A f =10MHz 50 MHz CLASSIFICATION OF hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400