PHILIPS BFS20W

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D102
BFS20W
NPN medium frequency transistor
Product data sheet
1999 Apr 21
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BFS20W
FEATURES
PINNING
• Low current (max. 25 mA)
PIN
• Low voltage (max. 20 V).
1
base
• Very low feedback capacitance (typ. 350 fF).
2
emitter
3
collector
DESCRIPTION
APPLICATIONS
• IF and VHF applications in thick and thin-film circuits.
3
handbook, halfpage
DESCRIPTION
3
NPN medium frequency transistor in a SOT323 (SC-70)
plastic package.
1
MARKING
2
1
2
MARKING CODE(1)
TYPE NUMBER
BFS20W
Top view
N1∗
Note
Fig.1
1. ∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
MAM062
Simplified outline (SOT323; SC-70) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
30
V
VCEO
collector-emitter voltage
open base
−
20
V
VEBO
emitter-base voltage
open collector
−
4
V
IC
collector current (DC)
−
25
mA
ICM
peak collector current
−
25
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
200
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C; note 1
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
1999 Apr 21
2
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BFS20W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
note 1
VALUE
UNIT
625
K/W
Note
1. Refer to SOT323 (SC-70) standard mounting conditions.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IE = 0; VCB = 20 V
−
−
100
nA
IE = 0; VCB = 20 V; Tj = 100 °C
−
−
10
µA
nA
IEBO
emitter cut-off current
IC = 0; VEB = 4 V
−
−
100
hFE
DC current gain
IC = 7 mA; VCE = 10 V
40
85
−
VBE
base-emitter voltage
IC = 7 mA; VCE = 10 V
−
740
900
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
1
−
pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz
−
350
−
fF
fT
transition frequency
IC = 5 mA; VCE = 10 V; f = 100 MHz
360
470
−
MHz
1999 Apr 21
3
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BFS20W
MGR830
103
handbook, halfpage
MGR831
103
handbook, halfpage
hFE
(1)
VCEsat
(mV)
102
(1)
(2)
(3)
(2)
(3)
102
10
1
10−1
1
10
IC (mA)
10
10−1
102
1
VCE = 10 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
10
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
MGR832
1000
MGR833
25
handbook, halfpage
handbook, halfpage
VBE
(mV)
(1)
IC
(mA)
(1)
(2)
20
800
102
(2)
(3)
15
(4)
600
(3)
10
(5)
400
5
200
10−1
(6)
0
1
10
IC (mA)
0
102
2
VCE = 10 V.
(1) Tamb = −100 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Tamb = 25 °C.
(1) IB = 280 µA.
(2) IB = 230 µA.
(3) IB = 180 µA.
Fig.4
Fig.5
Base-emitter voltage as a function of
collector current; typical values.
1999 Apr 21
4
4
6
8
10
VCE (V)
(4) IB = 130 µA.
(5) IB = 80 µA.
(6) IB = 30 µA.
Collector current as a function of
collector-emitter voltage; typical values.
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BFS20W
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
E
B
A
X
HE
y
v M A
3
Q
A
A1
c
1
2
e1
bp
Lp
w M B
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
SOT323
1999 Apr 21
REFERENCES
IEC
JEDEC
EIAJ
SC-70
5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
NXP Semiconductors
Product data sheet
NPN medium frequency transistor
BFS20W
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
1999 Apr 21
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
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Printed in The Netherlands
115002/00/01/pp7
Date of release: 1999 Apr 21
Document order number: 9397 750 05696